Optically pumped intersubband laser: Resonance positions and many-body effects

NRC publication: Ye

Terahertz quantum-well photodetector

NRC publication: Ye

Terahertz quantum-well photodetectors

NRC publication: Ye

Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors

NRC publication: Ye

Vacuum-field Rabi splitting in quantum-well infrared photodetectors

NRC publication: Ye

Crossing and anticrossing of spin-split Landau levels in an AlGaAs/GaAs parabolic quantum well

NRC publication: Ye

Quantum and transport mobilities in an AlGaAs/GaAs parabolic quantum-well structure

NRC publication: Ye

Hanle measurements of electrodeposited Fe/GaAs spin tunnel contacts

We report spin transport in electrodeposited Fe/n-GaAs tunnel diodes via three-terminal Hanle measurements. For temperatures between 20K and 150K, the spin resistance was up to 20 times higher than expected from theoretical calculations and 1000 times larger compared to a vacuum-deposited counterpart. This higher spin resistance was correlated with a higher contact resistance, and a higher concentration of oxygen impurities in the electrodeposited Fe film and interface, as detected via x-ray photoelectron and Auger spectroscopies, and inferred from Fe film nucleation rates. These results can be explained via a small effective tunnel-contact area of 5%, but extra spin filtering via interfacial states or magnetic oxide layers cannot be ruled out. The spin diffusion times (8.5 \ub1 0.4ns to 1.8 \ub1 0.4ns, for 20K to 150K) extracted from Lorentzian fits were in good agreement with values obtained from earlier 4-terminal Hanle measurements (7.8 \ub1 0.4ns to 3.2 \ub1 0.4ns, for 25K to 77K), both 10 times slower than reported vacuum-deposited contacts.Peer reviewed: YesNRC publication: Ye

Sym Infrared to Terahertz Technologies for Health and Environment

NRC publication: Ye