Exact solutions for a mean-field Abelian sandpile

We introduce a model for a sandpile, with N sites, critical height N and each site connected to every other site. It is thus a mean-field model in the spin-glass sense. We find an exact solution for the steady state probability distribution of avalanche sizes, and discuss its asymptotics for large N.Comment: 10 pages, LaTe

Research Notes : Australia : Designation of a core collection of perennial Glycine

Over the last decade, a large germplasm collection of the 12 currently recognized perennial species of Glycine has been assembled. This collection, now numbering more than 1400 accessions, is held in Canberra, Australia, and is recognized by the International Board of Plant Genetic Resources as the world base collection for perennial Glycine. The 12 species include five that have been described recently

Unfinished Business: a Review of the Implementation of the Provisions of United Nations General Assembly Resolutions 61/105 and 64/72, Related to the Management of Bottom Fisheries in Areas Beyond National Jurisdiction

In 2006 the General Assembly adopted resolution 61/105, based on a compromise proposal offered by deep-sea fishing nations, which committed States and regional fisheries management organisations [RFMOs] to take specific measures to protect vulnerable marine ecosystems [VMEs] from the adverse impacts of bottom fisheries in the high seas and to ensure the longterm sustainability of deep-sea fish stocks. These measures included conducting impact assessments to determine whether significant adverse impacts[SAIs] to VMEs would occur, managing fisheries to prevent SAIs on VMEs, and closing areas of the high seas to bottom fishing where VMEs are known or likely to occur, unless regulations are in place to prevent SAIs and to manage sustainably deep-sea fish stocks. Based on a review in 2009 of the actions taken by States and RFMOS, the UNGA adoptedresolution 64/72 that reaffirmed resolution 61/105 and strengthened the call for action through committing States, inter alia, to ensure that vessels do not engage in bottom fishing until impact assessments have been carried out and to not authorise bottom fishing activities until the measures in resolutions 64/72 and 61/105 have been adopted andimplemented

Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.Comment: Contribution to the IEEE-NSS Oct. 2003, Portland, OR, USA, submitted to IEEE-TNS 7 pages, 8 figures, 1 table. Revised, title change

Algebraic Aspects of Abelian Sandpile Models

The abelian sandpile models feature a finite abelian group G generated by the operators corresponding to particle addition at various sites. We study the canonical decomposition of G as a product of cyclic groups G = Z_{d_1} X Z_{d_2} X Z_{d_3}...X Z_{d_g}, where g is the least number of generators of G, and d_i is a multiple of d_{i+1}. The structure of G is determined in terms of toppling matrix. We construct scalar functions, linear in height variables of the pile, that are invariant toppling at any site. These invariants provide convenient coordinates to label the recurrent configurations of the sandpile. For an L X L square lattice, we show that g = L. In this case, we observe that the system has nontrivial symmetries coming from the action of the cyclotomic Galois group of the (2L+2)th roots of unity which operates on the set of eigenvalues of the toppling matrix. These eigenvalues are algebraic integers, whose product is the order |G|. With the help of this Galois group, we obtain an explicit factorizaration of |G|. We also use it to define other simpler, though under-complete, sets of toppling invariants.Comment: 39 pages, TIFR/TH/94-3

Spontaneous symmetry breaking: exact results for a biased random walk model of an exclusion process

It has been recently suggested that a totally asymmetric exclusion process with two species on an open chain could exhibit spontaneous symmetry breaking in some range of the parameters defining its dynamics. The symmetry breaking is manifested by the existence of a phase in which the densities of the two species are not equal. In order to provide a more rigorous basis to these observations we consider the limit of the process when the rate at which particles leave the system goes to zero. In this limit the process reduces to a biased random walk in the positive quarter plane, with specific boundary conditions. The stationary probability measure of the position of the walker in the plane is shown to be concentrated around two symmetrically located points, one on each axis, corresponding to the fact that the system is typically in one of the two states of broken symmetry in the exclusion process. We compute the average time for the walker to traverse the quarter plane from one axis to the other, which corresponds to the average time separating two flips between states of broken symmetry in the exclusion process. This time is shown to diverge exponentially with the size of the chain.Comment: 42 page

Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.Comment: Invited talk at International Symposium on the Development of Detectors for Particle, AstroParticle and Synchrtron Radiation Experiments, Stanford Ca (SNIC06) 8 pages, LaTeX, 11 eps figure

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.Comment: 8 pages, LaTeX document, 10 figures. Presented at Pixel 2005 Workshop, Bonn, Sept 2005. Small cosmetic revisions in response to referee comments and to fix broken reference link

A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.Comment: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figure