Modeling long term memory effects in microwave power amplifiers for system level simulations

International audienc

Modeling memory effects in nonlinear subsystems by dynamic Volterra series

International audienceDesign challenges resulting from single chip integration of RF and microwave transceivers is requiring both more powerful analog simulation techniques and more accurate behavioral models that allow efficient hierarchical simulation. Today system level models are limited by their inability to effectively cope with nonlinear memory effects. We describe a modeling approach based on modified Volterra series, which accounts efficiently for memory effects in nonlinear subsystems

Modélisation des phénomènes de mémoire à long terme des amplificateurs de puissance pour la simulation des systèmes de télécommunications

LIMOGES-BU Sciences (870852109) / SudocSudocFranceF

A Two-Kernel Nonlinear Impulse Response Model for Handling Long Term Memory Effects in RF and Microwave Solid State Circuits

International audienceAccurate modeling of the memory effects in nonlinear RF and microwave devices is of prime importance in the design process for the new generations of communications systems. This is particularly important for the design of power amplifier, predistorter and linearizer, and the prediction of system intermodulation distortion as well as power budget. This paper extends previous works and provides a comprehensive mathematical foundation for envelope-domain and band-pass nonlinear impulse response of RF and microwave blocs. The new model shows significant accuracy improvements in modeling long-term memory effects, especially self-heating. Besides the paper presents a new kernel identification technique that is faster and more accurate as it requires only frequency-domain measurements or harmonic-balance simulatio

Behavioral modeling of RF and microwave circuits blocs for hierarchical simulation of modern transceivers

International audienceThe development of simulation and macro-modeling techniques for RF and microwave communication systems has been a high priority research subject for several years. If one observed this last years an impressive improvement of simulation tools performances, the full chip simulation of modern TX-RX chains remains a real stumbling block, as the transistor count has considerably increased. This paper discusses the hierarchical RF simulation issue using the same harmonic balance or envelope transient simulation engine for both transistor level description and circuit block macro-models. This method can reduce the size of the problem to enable accurate and fast simulation of large size circuits. The concept requires however to develop macro-modeling techniques taking into account impedance mismatch effects, which are discussed here

A new behavioral model taking into account nonlinear memory effects and transient behaviors in wideband SSPAs

International audienceAccurate and non quasi-static behavioral models of SSPAs taking into account nonlinear memory effects become of prime importance for a breakthrough in system level analysis and design of wideband digital communication systems. This paper describes a new method to characterize and integrate memory effects in nonlinear behavioral models of SSPAs allowing to reproduce both transient and steady state behaviors