1.55 µm AlGaInAs/InP sampled grating laser diodes for mode-locking at THz frequencies

We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conventional or phase shifted sampled grating distributed Bragg reflectors(DBRs). For a conventional sampled grating with a continuous grating coupling coefficient of ~80 cm-1, mode-locking was observed at a fundamental frequency of 628 GHz and second harmonic of 1.20 THz. The peak output power was up to 142 mW. In the phase shifted sampled grating design, the grating is present along the entire length of the reflector with π-phase shift steps within each sampled section. The effective coupling coefficient is therefore increased substantially. Although the continuous grating coupling coefficient for the phase shifted gratings was reduced to ~23 cm-1 because of a different fabrication technology, the lasers demonstrated mode locking at fundamental repetition frequencies of 620 GHz and 1 THz, with a much lower level of amplified spontaneous emission seen in the output spectra than from conventional sampled grating devices. Although high pulse reproducibility and controllability over a wide operation range was seen for both types of grating, the π-phase-shifted gratings already demonstrate fundamental mode-locking to 1 THz. The integrated semiconductor optical amplifier makes sampled grating DBR lasers ideal pump sources for generating THz signals through photomixing

Integrated Phase-locked Laser Diodes at 1.55μm

Two types of integrated phased locked laser diodes operating at 1.55 μm were demonstrated, using either a distributed feedback laser seeding source or a self-locking multi-mode interference array. Both exhibited far field patterns that reflected mutual coherence between the light from the output waveguides

THz Repetition Frequency Mode-Locked Laser Using Novel Sampled Gratings

Conventional sampled grating distributed-Bragg-gratings (C-SGDBRs) are widely used in tunable DBR lasers [1], and more recently have been used to precisely control the wavelength spacing in arrays of DBR lasers for use in WDM systems [2], and as the reflectors in THz repetition frequency (Fr) semiconductor mode locked lasers (SMLLs) [3]. However, the effective coupling coefficient, κ, of a C-SGDBR (Fig. 1(a)) is necessarily reduced substantially from that of a uniform grating because much of the sampled grating period has no grating. Here, for the first time, we apply a combination of π-phase shifted gratings, previously demonstrated in fiber lasers [4], with the C-SGDBR technique to THz repetition frequency SMLLs. Using a single electron beam lithography (EBL) step we have demonstrated a 620 GHz side-wall SGDBR MLL with an increased effective κ

The light pseudoscalar Higgs boson in NMSSM

We study the associated production of a very light pseudoscalar Higgs boson with a pair of charginos. The novel signature involves a pair of charged leptons from chargino decays and a pair of photons from the pseudoscalar Higgs boson decay, plus large missing energy at the LHC and ILC. The signal may help us to distinguish the NMSSM from MSSM, provided that the experiment can resolve the two photons from the decay of the pseudoscalar Higgs boson.Comment: pages, 2 figures; to appear in Proceedings of SUSY06, the 14th International Conference on Supersymmetry and the Unification of Fundamental Interactions, UC Irvine, California, 12-17 June 200