210 research outputs found
Characterization of the Quantized Hall Insulator Phase in the Quantum Critical Regime
The conductivity and resistivity tensors of the disordered
Hofstadter model are mapped as functions of Fermi energy and temperature
in the quantum critical regime of the plateau-insulator transition (PIT).
The finite-size errors are eliminated by using the non-commutative
Kubo-formula. The results reproduce all the key experimental characteristics of
this transition in Integer Quantum Hall (IQHE) systems. In particular, the
Quantized Hall Insulator (QHI) phase is detected and analyzed. The presently
accepted characterization of the QHI phase in the quantum critical regime,
based entirely on experimental data, is fully supported by our theoretical
investigation.Comment: The scaling functions were computed and the data was extrapolated to
T=0. The Quantized Hall Insulator phase disappears at T=
Measuring the phonon-assisted spectral function by using a non-quilibrium three-terminal single-molecular device
The electron transport through a three-terminal single-molecular transistor
(SMT) is theoretically studied. We find that the differential conductance of
the third and weakly coupled terminal versus its voltage matches well with the
spectral function versus the energy when certain conditions are met.
Particularly, this excellent matching is maintained even for complicated
structure of the phonon-assisted side peaks. Thus, this device offers an
experimental approach to explore the shape of the phonon-assisted spectral
function in detail. In addition we discuss the conditions of a perfect
matching. The results show that at low temperatures the matching survives
regardless of the bias and the energy levels of the SMT. However, at high
temperatures, the matching is destroyed.Comment: 9 pages, 5 figure
Building topological device through emerging robust helical surface states
We propose a nonlocal manipulation method to build topological devices
through emerging robust helical surface states in Z_2=0 topological systems.
Specifically, in a ribbon of Z_2=0 Bernevig- Hughes-Zhang (BHZ) model with
finite-size effect, if magnetic impurities are doped on the top (bottom) edge,
the edge states on the bottom (top) edge can be altered according to the
strengths and directions of these magnetic impurities. Consequently, the
backscattering between the emerging robust helical edge states and gapped
normal edge states due to finite-size confinement is also changed, which makes
the system alternate between a perfect one-channel conductor and a perfect
insulator. This effect allows us to fabricate topological devices with high
on-off ratio. Moreover, it can also be generalized to 3D model and more
realistic Cd3As2 type Dirac semimetals.Comment: 7 pages, 6 figure
One-dimensional quantum channel in a graphene line defect
Using a tight-binding model, we study a line defect in graphene where a bulk
energy gap is opened by sublattice symmetry breaking. It is found that
sublattice symmetry breaking may induce many configurations that correspond to
different band spectra. In particular, a gapless state is observed for a
configuration which hold a mirror symmetry with respect to the line defect. We
find that this gapless state originates from the line defect and is independent
of the width of the graphene ribbon, the location of the line defect, and the
potentials in the edges of the ribbon. In particular, the gapless state can be
controlled by the gate voltage embedded below the line defect. Finally, this
result is supported with conductance calculations. This study shows how a
quantum channel could be constructed using a line defect, and how the quantum
channel can be controlled by tuning the gate voltage embedded below the line
defect.Comment: 8 pages, 10 figure
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