Optička svojstva soli polianilina i baze polianilina punjenog s KBr, Co(CH3COO)2 i pikričnom kiselinom

Polyaniline was prepared by chemical methods. The composites were prepared by the hot pressing of polyaniline base with different percentages of KBr, Co(CH3COO)2 and picric acid. The diffused reflectance of polyaniline doped with 10, 15, 25 and 50 wt% of KBr, picric acid and cobalt acetate, was measured at room temperature in the wavelength range from 500 to 1800 nm. The energy gaps of the samples were then deduced as well as the position and number of the indirect transitions which were found to be dependent on the concentration percentage of the doping materials. The energy gaps of all samples decrease by increasing the concentration percentage of the doping materials.Polianilin smo pripremili kemijskim postupkom. Mješavine smo postigli vrućim tiskanjem polianilina s raznim postocima KBr, Co(CH3COO)2 i pikrične kiseline. Mjerili smo difuznu reflektanciju polianilina s 10, 15, 25 and 50 tež% KBr, pikrične kiseline i kobaltnog acetata na sobnoj temperaturi za valne duljine 500 do 1800 nm. Odredili smo energijske procjepe te položaje i broj posrednih prijelaza. Ustanovili smo za sve uzorke pad energijskih procjepa pri povećanju koncentracije dodataka

Optička svojstva soli polianilina i baze polianilina punjenog s KBr, Co(CH3COO)2 i pikričnom kiselinom

Polyaniline was prepared by chemical methods. The composites were prepared by the hot pressing of polyaniline base with different percentages of KBr, Co(CH3COO)2 and picric acid. The diffused reflectance of polyaniline doped with 10, 15, 25 and 50 wt% of KBr, picric acid and cobalt acetate, was measured at room temperature in the wavelength range from 500 to 1800 nm. The energy gaps of the samples were then deduced as well as the position and number of the indirect transitions which were found to be dependent on the concentration percentage of the doping materials. The energy gaps of all samples decrease by increasing the concentration percentage of the doping materials.Polianilin smo pripremili kemijskim postupkom. Mješavine smo postigli vrućim tiskanjem polianilina s raznim postocima KBr, Co(CH3COO)2 i pikrične kiseline. Mjerili smo difuznu reflektanciju polianilina s 10, 15, 25 and 50 tež% KBr, pikrične kiseline i kobaltnog acetata na sobnoj temperaturi za valne duljine 500 do 1800 nm. Odredili smo energijske procjepe te položaje i broj posrednih prijelaza. Ustanovili smo za sve uzorke pad energijskih procjepa pri povećanju koncentracije dodataka

Učinak opuštanja na prekidačka svojstva tankih slojeva CuInSeTe

The switching properties of amorphous CuInSeTe thin films have been investigated. The amorphous quaternary semiconductor CuInSeTe thin films ∼ 220 nm and ∼ 330 nm thick have been prepared by thermal evaporation of the bulk compound under vacuum of about 10−4 Pa and with deposition rate about 8 nm/s. The structure of the bulk and thin films were investigated by the X-ray diffraction technique. The compositional studies of CuInSeTe in both powder and thin films were carried out by Perkin Elmer Model 1100 atomic absorption spectrometer. The annealing of the films at different annealing temperatures (300, 350, 400, 450 and 500 K) improves the switching characteristics and decrease the threshold voltage Vth. The threshold switching voltage and the threshold activation energy Es were found to decrease linearly with increasing annealing temperature. Moreover, the threshold switching voltage decreased exponentially with temperature.Istraživali smo prekidačka svojstva amorfnih tankih slojeva CuInSeTe. Tanke amorfne slojeve četiritvornog poluvodiča CuInSeTe debljine ∼ 220 nm i ∼ 330 nm pripremali smo naparavanjem spoja u vakuumu pri oko 10−4 Pa, brzinom naparavanja od oko 8 nm/s. Strukturu praha i tankih slojeva odredili smo rendgenskom difrakcijom. Sastav CuInSeTe u prahu i tankih slojeva ispitali smo pomoću Perkin Elmer-ovog (model 1100) apsorpcijskog spektrometra. Opuštanje tankih slojeva na nizu temperatura (300, 350, 400, 450 i 500 K) poboljšava njihova preklopna svojstva i smanjuje napon praga preklopnog napona Vth. Našli smo da se prag preklopnog napona i prag aktivacijske energije Es linearno smanjuju s povećanjem temperature opuštanja. K tome, prag preklopnog napona smanjuje se eksponencijalno s temperaturom opuštanja

Učinak opuštanja na prekidačka svojstva tankih slojeva CuInSeTe

The switching properties of amorphous CuInSeTe thin films have been investigated. The amorphous quaternary semiconductor CuInSeTe thin films ∼ 220 nm and ∼ 330 nm thick have been prepared by thermal evaporation of the bulk compound under vacuum of about 10−4 Pa and with deposition rate about 8 nm/s. The structure of the bulk and thin films were investigated by the X-ray diffraction technique. The compositional studies of CuInSeTe in both powder and thin films were carried out by Perkin Elmer Model 1100 atomic absorption spectrometer. The annealing of the films at different annealing temperatures (300, 350, 400, 450 and 500 K) improves the switching characteristics and decrease the threshold voltage Vth. The threshold switching voltage and the threshold activation energy Es were found to decrease linearly with increasing annealing temperature. Moreover, the threshold switching voltage decreased exponentially with temperature.Istraživali smo prekidačka svojstva amorfnih tankih slojeva CuInSeTe. Tanke amorfne slojeve četiritvornog poluvodiča CuInSeTe debljine ∼ 220 nm i ∼ 330 nm pripremali smo naparavanjem spoja u vakuumu pri oko 10−4 Pa, brzinom naparavanja od oko 8 nm/s. Strukturu praha i tankih slojeva odredili smo rendgenskom difrakcijom. Sastav CuInSeTe u prahu i tankih slojeva ispitali smo pomoću Perkin Elmer-ovog (model 1100) apsorpcijskog spektrometra. Opuštanje tankih slojeva na nizu temperatura (300, 350, 400, 450 i 500 K) poboljšava njihova preklopna svojstva i smanjuje napon praga preklopnog napona Vth. Našli smo da se prag preklopnog napona i prag aktivacijske energije Es linearno smanjuju s povećanjem temperature opuštanja. K tome, prag preklopnog napona smanjuje se eksponencijalno s temperaturom opuštanja

Izrada i značajke tankih polikristaliničnih hetero-spojeva n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2

CuGa0.3In0.7Se2 polycrystalline thin films were prepared by thermal evaporation under vacuum of about 10-4Pa, with a deposition rate of about 200 nm/min. The selenization of these films at 723 K improves their properties. The activation energy as well as the optical energy gap of the investigated samples decreased with annealing and selenization. Polycrystalline thin film n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 heterojunctions were fabricated and the current density - voltage and capacitance - voltage characteristics of the junction were studied. The heterojunctions were exposed to light, and under illumination of 1000 mWcm-2, the open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion efficiency was 1.898% for cells of active area of 1 cm2.Tanke polikristalinične slojeve CuGa0.3In0.7Se2 pripremali smo naparavanjem u vakuumu oko 10−4 Pa, brzinom polaganja oko 200 nm/min. Seleniranje tih slojeva na 723 K poboljšava im svojstva. Aktivacijska energija i optički energijski procijep smanjuju se opuštanjem i seleniranjem. Pripremali smo i polikristalinične tankoslojne hetero-spojeve n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 i proučavali njihova značajke: gustoća struje – napon i kapacitet – napon. Ćelije ploštine 1 cm2 heterospojeva osvijetlili smo svjetlošću jakosti 1000 mW/cm2 i izmjerili napon otvorenog kruga od 580 mV, gustoću struje kratkog spoja 4.8 mAcm−2 , faktor punjenja 0.682 i učinkovitost pretvorbe 1.898%

Izrada i značajke tankih polikristaliničnih hetero-spojeva n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2

CuGa0.3In0.7Se2 polycrystalline thin films were prepared by thermal evaporation under vacuum of about 10-4Pa, with a deposition rate of about 200 nm/min. The selenization of these films at 723 K improves their properties. The activation energy as well as the optical energy gap of the investigated samples decreased with annealing and selenization. Polycrystalline thin film n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 heterojunctions were fabricated and the current density - voltage and capacitance - voltage characteristics of the junction were studied. The heterojunctions were exposed to light, and under illumination of 1000 mWcm-2, the open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion efficiency was 1.898% for cells of active area of 1 cm2.Tanke polikristalinične slojeve CuGa0.3In0.7Se2 pripremali smo naparavanjem u vakuumu oko 10−4 Pa, brzinom polaganja oko 200 nm/min. Seleniranje tih slojeva na 723 K poboljšava im svojstva. Aktivacijska energija i optički energijski procijep smanjuju se opuštanjem i seleniranjem. Pripremali smo i polikristalinične tankoslojne hetero-spojeve n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 i proučavali njihova značajke: gustoća struje – napon i kapacitet – napon. Ćelije ploštine 1 cm2 heterospojeva osvijetlili smo svjetlošću jakosti 1000 mW/cm2 i izmjerili napon otvorenog kruga od 580 mV, gustoću struje kratkog spoja 4.8 mAcm−2 , faktor punjenja 0.682 i učinkovitost pretvorbe 1.898%

Alterations in aortic elasticity in noncompaction cardiomyopathy

Background: Noncompaction cardiomyopathy (NCCM) is a recently recognized disorder frequently associated with systolic and diastolic heart failures. This study was designed to examine aortic stiffness in NCCM patients and to compare these results to age- and gender-matched controls. Methods: A total of 20 patients with typical echocardiographic features of NCCM (age 38 ± 16 years, eight males) were investigated. Their results were compared to 20 age- and gender-matched controls. All subjects underwent a complete two-dimensional transthoracic echocardiographic examination. Systolic (SD) and diastolic (DD) ascending aortic diameters were recorded in M-mode at a level of 3 cm above the aortic valve from a parasternal long-axis view. Aortic stiffness index (β) was calculated as a characteristic of aortic elasticity, as ln(SBP/DBP)/[(SD - DD)/DD], where SBP and DBP are the systolic and diastolic blood pressures, respectively, and ln is the natural logarithm. Results: The number of noncompacted segments in the NCCM patients was 4.6 ± 2.0. NCCM patients had significantly increased left ventricular dimensions and reduced left ventricular ejection fraction. Compared to controls, aortic stiffness index (β) was significantly increased in NCCM patients (8.3 ± 5.2 vs. 3.5 ± 1.1, p < 0.001). Conclusion: Increased aortic stiffness can be observed in patients with NCCM with moderate to severe heart failure. These alterations may be due to neurohormonal changes in heart failure

Alterations in aortic elasticity in noncompaction cardiomyopathy

BACKGROUND: Noncompaction cardiomyopathy (NCCM) is a recently recognized disorder frequently associated with systolic and diastolic heart failures. This study was designed to examine aortic stiffness in NCCM patients and to compare these results to age- and gender-matched controls. METHODS: A total of 20 patients with typical echocardiographic features of NCCM (age 38 +/- 16 years, eight males) were investigated. Their results were compared to 20 age- and gender-matched controls. All subjects underwent a complete two-dimensional transthoracic echocardiographic examination. Systolic (SD) and diastolic (DD) ascending aortic diameters were recorded in M-mode at a level of 3 cm above the aortic valve from a parasternal long-axis view. Aortic stiffness index (beta) was calculated as a characteristic of aortic elasticity, as ln(SBP/DBP)/[(SD - DD)/DD], where SBP and DBP are the systolic and diastolic blood pressures, respectively, and ln is the natural logarithm. RESULTS: The number of noncompacted segments in the NCCM patients was 4.6 +/- 2.0. NCCM patients had significantly increased left ventricular dimensions and reduced left ventricular ejection fraction. Compared to controls, aortic stiffness index (beta) was significantly increased in NCCM patients (8.3 +/- 5.2 vs. 3.5 +/- 1.1, p < 0.001). CONCLUSION: Increased aortic stiffness can be observed in patients with NCCM with moderate to severe heart failure. These alterations may be due to neurohormonal changes in heart failure

New Scores for the Assessment of Mitral Stenosis Using Real-Time Three-Dimensional Echocardiography

Nonsurgical management of patients with symptomatic mitral valve stenosis has been established as the therapeutic modality of choice for two decades. Catheter-based balloon dilation of the stenotic valvular area has been shown, at least, as effective as surgical interventions. Unfavorable results of catheter-based interventions are largely due to unfavorable morphology of the valve apparatus, particularly leaflets calcification and subvalvular apparatus involvement. A mitral valve score has been proposed in Boston, MA, about two decades ago, based on morphologic assessment of mitral valve apparatus by two-dimensional (2D) echocardiography to predict successful balloon dilation of the mitral valve. Several other scores have been developed in the following years in order to more successfully predict balloon dilatation outcome. However, all those scores were based on 2D echocardiography, which is limited by ability to distinguish calcification and subvalvular involvement. The introduction of new matrix-based ultrasound probe has allowed 3D echocardiography (3DE) to provide more detailed morphologic analysis of mitral valve apparatus including calcification and subvalvular involvement. Recently, a new 3DE scoring system has been proposed by our group, which represents an important leap into refinement of the use of echocardiography guiding mitral valve interventions

Value of assessment of tricuspid annulus: real-time three-dimensional echocardiography and magnetic resonance imaging

Aim: To detect the accuracy of real-time three-dimensional echocardiography (RT3DE) and two-dimensional echocardiography (2DE) for tricuspid annulus (TA) assessment compared with magnetic resonance imaging (MRI). Methods: Thirty patients (mean age 34 ± 13 years, 60% males) in sinus rhythm were examined by MRI, RT3DE, and 2DE for TA assessment. End-diastolic and end-systolic TA diameter (TAD) and TA fractional shortening (TAFS) were measured by RT3DE, 2DE, and MRI. End-diastolic and end-systolic TA area (TAA) and TA fractional area changes (TAFAC) were measured by RT3DE and MRI. End-diastolic and end-systolic right ventricular (RV) volumes and ejection fraction (RV-EF) were measured by MRI. Results: The TA was clearly delineated in all patients and visualized as an oval-shaped by RT3DE and MRI. There was a good correlation between TADMRIand TAD3D(r = 0.75, P = 0.001), while TAD2Dwas fairly correlated with TAD3Dand TADMRI(r = 0.5, P = 0.01 for both). There were no significant differences between RT3DE and MRI in TAD, TAA, TAFS, and TAFAC measurements, while TAD2Dand TAFS2Dwere significantly underestimated (P < 0.001). TAFS2Dwas not correlated with RV-EF, while TAFS3Dand TAFAC3Dwere fairly correlated with RV-EF (r = 0.49, P = 0.01, and r = 0.47, P = 0.02 respectively). Conclusion: RT3DE helps in accurate assessment of TA comparable to MRI and may have an important implication in the TV surgical decision-making processes. RT3DE analysis of TA function could be used as a marker of RV function