Quantum Wire-on-Well (WoW) Cell With Long Carrier Lifetime for Efficient Carrier Transport

A quantum wire-on-well (WoW) structure, taking advantage of the layer undulation of an In- GaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately 4 times as compared with a planar reference superlattice. Strained InGaAs/GaAs/GaAsP superlattices were grown on GaAs substrates under exactly the same condition except for the substrate misorientation (0o- and 6o- off). The growth on a 6o-off substrate induced significant layer undulation as a result of step bunching and non-uniform precursor incorporation between steps and terraces whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a wire-on-well structure. As for the photocurrent corresponding to the sub-bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice, and almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open-circuit voltage for the WoW was not affected by the longer-wavelength absorption edge and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice

Quantum wire-on-well (WoW) cell with long carrier lifetime for efficient carrier transport

A quantum wire-on-well (WoW) structure, taking advantage of the layer undulation of an InGaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately four times more than a planar reference superlattice. Strained InGaAs/GaAs/GaAsP superlattices were grown on GaAs substrates under exactly the same conditions except for the substrate misorientation (0 and 6 ° off). The growth on a 6 ° off substrate induced significant layer undulation as a result of step bunching and non-uniform precursor incorporation between steps and terraces, whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a WoW structure. As for the photocurrent corresponding to the sub-bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice. Almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open-circuit voltage for the WoW was not affected by the longer-wavelength absorption edge, and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice

Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes

We illustrate the important trade-off between far-field scattering effects, which have the potential to provide increased optical path length over broad bands, and parasitic absorption due to the excitation of localized surface plasmon resonances in metal nanoparticle arrays. Via detailed comparison of photocurrent enhancements given by Au, Ag and Al nanostructures on thin-film GaAs devices we reveal that parasitic losses can be mitigated through a careful choice of scattering medium. Absorption at the plasmon resonance in Au and Ag structures occurs in the visible spectrum, impairing device performance. In contrast, exploiting Al nanoparticle arrays results in a blue shift of the resonance, enabling the first demonstration of truly broadband plasmon enhanced photocurrent and a 22% integrated efficiency enhancement

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells