Reaction Diffusion Models in One Dimension with Disorder

We study a large class of 1D reaction diffusion models with quenched disorder using a real space renormalization group method (RSRG) which yields exact results at large time. Particles (e.g. of several species) undergo diffusion with random local bias (Sinai model) and react upon meeting. We obtain the large time decay of the density of each specie, their associated universal amplitudes, and the spatial distribution of particles. We also derive the spectrum of exponents which characterize the convergence towards the asymptotic states. For reactions with several asymptotic states, we analyze the dynamical phase diagram and obtain the critical exponents at the transitions. We also study persistence properties for single particles and for patterns. We compute the decay exponents for the probability of no crossing of a given point by, respectively, the single particle trajectories ($\theta$) or the thermally averaged packets ($\bar{\theta}$). The generalized persistence exponents associated to n crossings are also obtained. Specifying to the process $A+A \to \emptyset$ or A with probabilities $(r,1-r)$, we compute exactly the exponents $\delta(r)$ and $\psi(r)$ characterizing the survival up to time t of a domain without any merging or with mergings respectively, and $\delta_A(r)$ and $\psi_A(r)$ characterizing the survival up to time t of a particle A without any coalescence or with coalescences respectively. $\bar{\theta}, \psi, \delta$ obey hypergeometric equations and are numerically surprisingly close to pure system exponents (though associated to a completely different diffusion length). Additional disorder in the reaction rates, as well as some open questions, are also discussed.Comment: 54 pages, Late

Growth of nanostructures by cluster deposition : a review

This paper presents a comprehensive analysis of simple models useful to analyze the growth of nanostructures obtained by cluster deposition. After detailing the potential interest of nanostructures, I extensively study the first stages of growth (the submonolayer regime) by kinetic Monte-Carlo simulations. These simulations are performed in a wide variety of experimental situations : complete condensation, growth with reevaporation, nucleation on defects, total or null cluster-cluster coalescence... The main scope of the paper is to help experimentalists analyzing their data to deduce which of those processes are important and to quantify them. A software including all these simulation programs is available at no cost on request to the author. I carefully discuss experiments of growth from cluster beams and show how the mobility of the clusters on the surface can be measured : surprisingly high values are found. An important issue for future technological applications of cluster deposition is the relation between the size of the incident clusters and the size of the islands obtained on the substrate. An approximate formula which gives the ratio of the two sizes as a function of the melting temperature of the material deposited is given. Finally, I study the atomic mechanisms which can explain the diffusion of the clusters on a substrate and the result of their mutual interaction (simple juxtaposition, partial or total coalescence...)Comment: To be published Rev Mod Phys, Oct 99, RevTeX, 37 figure