Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.Comment: 6 pages, 1 figure; Preprint of an article submitted for consideration in [International Journal of Modern Physics: Conference Series] \copyright [2012] [copyright World Scientific Publishing Company] [http://www.worldscinet.com/ijmpcs.html

Reconciling Conductance Fluctuations and the Scaling Theory of Localization

We reconcile the phenomenon of mesoscopic conductance fluctuations with the single parameter scaling theory of the Anderson transition. We calculate three averages of the conductance distribution: $\exp()$, $$ and $1/$ where $g$ is the conductance in units of $e^2/h$ and $R=1/g$ is the resistance and demonstrate that these quantities obey single parameter scaling laws. We obtain consistent estimates of the critical exponent from the scaling of all these quantities