Charge depletion of n(+)-In0.53Ga0.47As potential wells by background acceptor doping

Published versio

Shubnikov-de Haas effect and persistent photoconductivity in In0.52Al0.48As

Published versio

Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier

Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extracted from the Hall data and Shubnikov-de Haas oscillations. We find that the transport parameters are strongly affected by the insertion of the AlAs central barrier. Photoluminescence spectra, measured at 77 K, show an increase of the transition energies upon insertion of the barrier. The transport and optical data are analyzed with help of self-consistent calculations of the subband structure and envelope wave functions. Insertion of the AlAs central barrier changes the spatial distribution of the electron wave functions and leads to the formation of hybrid states, i.e. states which extend over the InGaAs and the delta-doped layer quantum wells.Comment: 14 pages, pdf fil

Probing the potential landscape inside a two-dimensional electron-gas

We report direct observations of the scattering potentials in a two-dimensional electron-gas using electron-beam diffaction-experiments. The diffracting objects are local density-fluctuations caused by the spatial and charge-state distribution of the donors in the GaAs-(Al,Ga)As heterostructures. The scatterers can be manipulated externally by sample illumination, or by cooling the sample down under depleted conditions.Comment: 4 pages, 4 figure

Effect of Oscillating Landau Bandwidth on the Integer Quantum Hall Effect in a Unidirectional Lateral Superlattice

We have measured activation gaps for odd-integer quantum Hall states in a unidirectional lateral superlattice (ULSL) -- a two-dimensional electron gas (2DEG) subjected to a unidirectional periodic modulation of the electrostatic potential. By comparing the activation gaps with those simultaneously measured in the adjacent section of the same 2DEG sample without modulation, we find that the gaps are reduced in the ULSL by an amount corresponding to the width acquired by the Landau levels through the introduction of the modulation. The decrement of the activation gap varies with the magnetic field following the variation of the Landau bandwidth due to the commensurability effect. Notably, the decrement vanishes at the flat band conditions.Comment: 7 pages, 6 figures, minor revisio

Sn delta-doping in GaAs

We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other delta-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the delta-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. These calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated.Comment: 11 pages text (ps), 9 figures (ps), submitted to Semicon. Science Tech

Modulation Induced Phase Transition from Fractional Quantum Hall to Stripe State at nu=5/3

We have investigated the effect of unidirectional periodic potential modulation on the fractional quantum Hall (FQH) state at filling factors nu=5/3 and 4/3. For large enough modulation amplitude, we find that the resistivity minimum at nu=5/3 gives way to a peak that grows with decreasing temperature. Density matrix renormalization group calculation reveals that phase transition from FQH state to unidirectional striped state having a period sim 4 l (with l the magnetic length) takes place at nu=1/3 (equivalent to nu=5/3 by the particle-hole symmetry) with the increase of the modulation amplitude, suggesting that the observed peak is the manifestation of the stripe phase.Comment: 4 pages, 6 figures; minor revisio

Anisotropic transport in unidirectional lateral superlattice around half-filling of the second Landau level

We have observed marked transport anisotropy in short period (a=92 nm) unidirectional lateral superlattices around filling factors nu=5/2 and 7/2: magnetoresistance shows a sharp peak for current along the modulation grating while a dip appears for current across the grating. By altering the ratio a/l (with l=sqrt{hbar/eB_perp} the magnetic length) via changing the electron density n_e, it is shown that the nu=5/2 anisotropic features appear in the range 6.6 alt a/l alt 7.2 varying their intensities, becoming most conspicuous at a/l simeq 6.7. The peak/dip broadens with temperature roughly preserving its height/depth up to 250 mK. Tilt experiments reveal that the structures are slightly enhanced by an in-plane magnetic field B_| perpendicular to the grating but are almost completely destroyed by B_| parallel to the grating. The observations suggest the stabilization of a unidirectional charge-density-wave or stripe phase by weak external periodic modulation at the second Landau level.Comment: REVTeX, 5 pages, 3 figures, Some minor revisions, Added notes and reference

Harmonic Content of Strain-induced Potential Modulation in Unidirectional Lateral Superlattices

Detailed analysis of the commensurability oscillation (CO) has been performed on unidirectional lateral superlattices with periods ranging from a=92 to 184 nm. Fourier analysis reveals the second (and the third) harmonics along with the fundamental oscillation for a>=138 nm (184 nm) at low-enough temperature, evincing the presence of corresponding harmonics in the profile of the potential modulation. The harmonics manifest themselves in CO with demagnified amplitude due to the low-pass filtering action of the thermal damping factor; with a suitable consideration of the damping effect, the harmonics of the modulation potential are found to have the amplitudes V_2 and V_3 up to roughly 30% of that of the fundamental component V_1, despite the small ratio of the period a to the depth d = 99 nm of the two-dimensional electron gas (2DEG) from the surface. The dependence of V_n on a indicates that the fundamental component originates at the surface, while the higher harmonics arise from the effect of the strain that penetrates down into subsurface. The manipulation of high harmonics thus provides a useful technique to introduce small length-scale modulation into high-mobility 2DEGs located deep inside the wafer.Comment: 9 pages, 5 figure

Commensurability oscillations in the rf conductivity of unidirectional lateral superlattices: measurement of anisotropic conductivity by coplanar waveguide

We have measured the rf magnetoconductivity of unidirectional lateral superlattices (ULSLs) by detecting the attenuation of microwave through a coplanar waveguide placed on the surface. ULSL samples with the principal axis of the modulation perpendicular (S_perp) and parallel (S_||) to the microwave electric field are examined. For low microwave power, we observe expected anisotropic behavior of the commensurability oscillations (CO), with CO in samples S_perp and S_|| dominated by the diffusion and the collisional contributions, respectively. Amplitude modulation of the Shubnikov-de Haas oscillations is observed to be more prominent in sample S_||. The difference between the two samples is washed out with the increase of the microwave power, letting the diffusion contribution govern the CO in both samples. The failure of the intended directional selectivity in the conductivity measured with high microwave power is interpreted in terms of large-angle electron-phonon scattering.Comment: 8 pages, 5 figure