Near-Perfect Correlation of the Resistance Components of Mesoscopic Samples at the Quantum Hall Regime

We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $\nu=2$ and the $\nu=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. We discuss these findings in light of edge-state transport models of the quantum Hall effect. We also show that our results lead to an ambiguity in the determination of the width of quantum Hall transitions.Comment: As publishe

Fabrication technologies for quantum cascade photonic-crystal microlasers

In this paper we describe the technological and fabrication methods necessary to incorporate both photonic and electronic-band engineering in order to create novel surface-emitting quantum cascade microcavity laser sources. This technology offers the promise of several innovative applications such as the miniaturization of QC lasers, and multi-wavelength two-dimensional laser arrays for spectroscopy, gas-sensing and imaging. This approach is not limited to light-emitting devices, and may be efficiently applied to the development of mid- and far-infrared normal-incidence detectors

Fabrication methods for a quantum cascade photonic crystal surface emitting laser

Conventional quantum cascade (QC) lasers are intrinsically edge-emitting devices with mode confinement achieved via a standard mesa stripe configuration. Surface emission in edge emitting QC lasers has therefore necessitated redirecting the waveguided laser emission using a second order grating. This paper describes the methods used to fabricate a 2D photonic crystal (PC) structure with or without a central defect superimposed on an electrically pumped QC laser structure with the goal of achieving direct surface emission. A successful systematic study of PC hole radius and spacing was performed using e-beam lithography. This PC method offers the promise of a number of interesting applications, including miniaturization and integration of QC lasers

The quantized Hall effect in the presence of resistance fluctuations

We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its $\nu=1$ value, $h/e^{2}$. This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity in the quantum Hall effect to the mesoscopic regime.Comment: Includes more data, changed discussio

Quantum cascade photonic crystal surface emitting injection laser

A surface emitting quantum cascade injection laser is presented. Direct surface emission is obtained by using a 2D photonic-band-gap structure that simultaneously acts as a microcavity. The approach may allow miniaturization and on-chip-integration of the devices

Two-Dimensional Electron Gas in InGaAs/InAlAs Quantum Wells

We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life-time suggest that the main scattering mechanism is due to short range scattering, such as alloy scattering, with a scattering rate of 2.2 ps$^{-1}$. We also obtain the Fermi level at the In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As surface to be 0.36eV above the conduction band, when fitting our experimental densities with a Poisson-Schr\"odinger model.Comment: Accepted in Applied Physics Letter

Γ and X bandgap hydrostatic deformation potentials for epitaxial In_0.52Al_0.48As on InP(001)

The pressure dependence of the direct and indirect bandgap of epitaxial In0.52Al0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain (Ξd+1/3Ξu−a)as−(6⋅92+0⋅3)eV and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τΓ/τX), of 4.1×10−3 is deduced