Antiferromagnetism at the YBa2Cu3O7 / La2/3Ca1/3MnO3 interface

The magnetic properties of a series of YBa2Cu3O7-x/La2/3Ca1/3MnO3 (YBCO/LC1/3MO) superlattices grown by dc sputtering at high oxygen pressures (3.5 mbar) show the expected ferromagnetic behaviour. However, field cooled hysteresis loops at low temperature show the unexpected existence of exchange bias, effect associated with the existence of ferromagnetic/antiferromagnetic (F/AF) interfaces. The blocking temperature (TB) is found thickness dependent and the exchange bias field (HEB) is found inversely proportional to the FM layer thickness, as expected. The presence of an AF material is probably associated to interface disorder and Mn valence shift towards Mn4+.Comment: 12 pages, 2 figures, 1 table, submitted to Applied Physics Letter

Improving HTc Josephson Junctions (HTc JJ) by annealing: the role of vacancy-interstitial annihilation

We have studied the annealing effect in transport properties of High temperature Josephson Junctions (HTc JJ) made by ion irradiation. Low temperature annealing (80 degrees Celsius) increases the JJ transition temperature (TJ) and the Ic.Rn product, where Ic is the critical current and Rn the normal resistance. We found that the spread in JJ characteristics can be lowered by sufficient long annealing times. Using random walk numerical simulations, we showed that the characteristic annealing time and the evolution of the spread in JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one.Comment: 7 pages and 3 figures submitted to Applied Physics Letter

Study and optimization of ion-irradiated High-Tc Josephson nanoJunctions by Monte Carlo simulations

High Tc Josephson nanoJunctions (HTc JnJ) made by ion irradiation have remarkable properties for technological applications. However, the spread in their electrical characteristics increases with the ion dose. We present a simple model to explain the JnJ inhomogeneities, which accounts quantitatively for experimental data. The spread in the slit's width of the irradiation mask is the limiting factor.Monte Carlo simulations have been performed using different irradiation conditions to study their influence on the spread of the JnJ charcateristics. A "universal" behavior has been evidenced, which allows to propose new strategies to optimize JnJ reproducibility.Comment: 14 pages, 6 Figures. accepted in Journal of Applied Physic

Influence of ion implantation on the magnetic and transport properties of manganite films

We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign of low field magnetoresistance was found. Point defect disorder decreases the system magnetization but doesn t seem to change the magnetic transition temperature. As a consequence, an important decoupling between the magnetic and the metal-insulator transition is found for ion irradiated films as opposed to the classical double exchange model scenario.Comment: 27 pages, 11 Figure

Direct observation of electronic inhomogeneities induced by point defect disorder in manganite films

We have investigated the influence of point defect disorder in the electronic properties of manganite films. Real-time mapping of ion irradiated samples conductivity was performed though conductive atomic force microscopy (CAFM). CAFM images show electronic inhomogeneities in the samples with different physical properties due to spatial fluctuations in the point defect distribution. As disorder increases, the distance between conducting regions increases and the metal-insulator transition shifts to lower temperatures. Transport properties in these systems can be interpreted in terms of a percolative model. The samples saturation magnetization decreases as the irradiation dose increases whereas the Curie temperature remains unchanged