31 research outputs found
Effective Electronic Structure of Monoclinic alloy semiconductor
In this article, the electronic band structure
alloy system is calculated with as the bulk crystal. The
technique of band unfolding is implemented to obtain the effective
bandstructure \textit{(EBS)} for aluminium fractions varying between 12.5\% and
62.5\% with respect to the gallium atoms. A 160 atom supercell is used to model
the disordered system that is generated using the technique of special
quasirandom structures which mimics the site correlation of a truly random
alloy and reduces the configurational space that arises due to the vast
enumeration of alloy occupation sites. The impact of the disorder is then
evaluated on the electron effective mass and bandgap which is calculated under
the generalized gradient approximation \textit{(GGA)}. The EBS of disordered
systems gives an insight into the effect of the loss of translational symmetry
on the band topology which manifests as band broadening and can be used to
evaluate disorder induced scattering rates and electron lifetimes. This
technique of band unfolding can be further extended to alloy phonon dispersion
and subsequently phonon lifetimes can also be evaluated from the band
broadening
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
This letter reports high-performance $\mathrm{\beta} Ga2O3 thin channel
MOSFETs with T-gate and degenerately doped source/drain contacts regrown by
MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current
(ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain
bias with 23.5 Ohm mm on resistance (Ron). A low metal/n+ contact resistance of
0.078 Ohm mm was extracted from TLM measurement. Ron is dominated by interface
resistance between channel and regrown layer. A gate-to-drain breakdown voltage
of 192 V is measured for LGD = 355 nm resulting in average breakdown field
(E_AVG) of 5.4 MV/cm. This E_AVG is the highest reported among all sub-micron
gate length lateral FETs. RF measurements on 200 nm Silicon Nitride (Si3N4)
passivated device shows a current gain cut off frequency (f_T) of 11 GHz and
record power gain cut off frequency (f_MAX) of 48 GHz. The f_T.V_Br product is
2.11 THz.V for 192 V breakdown voltage. The switching figure of merit exceeds
that of silicon and is comparable to mature wide-band gap devices