Drift region doping effects on high voltage conductivity modulated thin film transistors

The effects of drift region doping on the high voltage (up to 100V) characteristics of the Conductivity Modulated Thin Film Transistor is investigated. It is demonstrated that a non critical implant can be used to reduce the forward voltage drop of the transistor for longer drift region devices, and a favourable trade-off between the forward voltage drop and leakage current can be obtained by using the drift region doping. Results on non-optimized devices show that for devices with breakdown voltage of 100V, an 8 times increase in drain to source current in doped CMTFT devices causes only a 30% increase in leakage current compared to the undoped devices

Simulated gate current characteristics of the race-track-shaped field emitter structures

In this paper, gate current characteristics of the single- and double-gate race-track-shaped field emitter structures are reported. The gate current characteristics are calculated by the finite-difference method in Non-Orthogonal Curvilinear Coordinate System and the fourth-order Runge-Kutta method. Numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% and the ratio of anode current to gate current is increased by 36 times at a gate voltage of 350 V compared to the single-gate structure

Design of monolithic RF power amplifier using bulk BiCMOS process

A low-voltage monolithic 900MHz power amplifier has been fabricated in a commercial 0.8μm bulk BiCMOS process with an integrated output tuned circuit. The tuned circuit is implemented by a monolithic inductor of 2.6nH with 54μm metal width. The output power of the amplifier is 14dBm

Implementation of linear doping profiles for high voltage thin-film SOI devices

In this paper, a novel approach is proposed to obtain a linear doping profile for the implementation of lateral high voltage devices on thin-film Silicon-On-Insulator (SOI). The linear doping profile is obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide mask with subsequent impurity implantation and drive-in processes. To understand the effect of the location and size of the oxide slits on the final doping profile, an one-dimensional analytical model is developed. Moreover, a computer program has also been developed to facilitate the slit parameters optimization. Validity of the model and the program has been verified by performing extensive two-dimensional process and device simulations

Novel single- and double-gate race-track-shaped field emitter structures

In this paper, new single- and double-gate race-track-shaped field emitter structures are reported for the first time. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100 V, and the field emission current density is approximately 2.4 A/cm² which is over 12 times larger than that of the volcano-shaped emitter structure reported previously. Furthermore, numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% compared to the single-gate structure