371 research outputs found
Spin Degree of Freedom in a Two-Dimensional Electron Liquid
We have investigated correlation between spin polarization and
magnetotransport in a high mobility silicon inversion layer which shows the
metal-insulator transition. Increase in the resistivity in a parallel magnetic
field reaches saturation at the critical field for the full polarization
evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By
rotating the sample at various total strength of the magnetic field, we found
that the normal component of the magnetic field at minima in the diagonal
resistivity increases linearly with the concentration of ``spin-up'' electrons.Comment: 4 pages, RevTeX, 6 eps-figures, to appear in PR
A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs
We argue that there is a new liquid phase in the two-dimensional electron
system in Si MOSFETs at low enough electron densities. The recently observed
metal-insulator transition results as a crossover from the percolation
transition of the liquid phase through the disorder landscape in the system
below the liquid-gas critical temperature. The consequences of our theory are
discussed for variety of physical properties relevant to the recent
experiments.Comment: 12 pages of RevTeX with 3 postscript figure
Universality in an integer Quantum Hall transition
An integer Quantum Hall effect transition is studied in a modulation doped
p-SiGe sample. In contrast to most examples of such transitions the
longitudinal and Hall conductivities at the critical point are close to 0.5 and
1.5 (e^2/h), the theoretically expected values. This allows the extraction of a
scattering parameter, describing both conductivity components, which depends
exponentially on filling factor. The strong similarity of this functional form
to those observed for transitions into the Hall insulating state and for the
B=0 metal- insulator transition implies a universal quantum critical behaviour
for the transitions. The observation of this behaviour in the integer Quantum
Hall effect, for this particular sample, is attributed to the short-ranged
character of the potential associated with the dominant scatterers
Indication of the ferromagnetic instability in a dilute two-dimensional electron system
The magnetic field B_c, in which the electrons become fully spin-polarized,
is found to be proportional to the deviation of the electron density from the
zero-field metal-insulator transition in a two-dimensional electron system in
silicon. The tendency of B_c to vanish at a finite electron density suggests a
ferromagnetic instability in this strongly correlated electron system.Comment: 4 pages, postscript figures included. Revised versio
Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle
Recent experiments in the two dimensional electron systems in silicon MOSFETs
have shown that the in-plane magnetic field required to saturate the
conductivity to its high-field value and the magnetic field needed to
completely align the spins of the electrons are comparable. By small-angle
Shubnikov-de Haas oscillation measurements that allow separate determinations
of the spin-up and spin-down subband populations, we show that to
an accuracy of 5% for electron densities cm.Comment: 4 pages, 3 figures; minor changes, references updated and adde
Possible triplet superconductivity in MOSFETs
A theory that predicts a spin-triplet, even-parity superconducting ground
state in two-dimensional electron systems is re-analyzed in the light of recent
experiments showing a possible insulator-to-conductor transition in such
systems. It is shown that the observations are consistent with such an exotic
superconductivity mechanism, and predictions are made for experiments that
would further corroborate or refute this proposal.Comment: 4 pp., REVTeX, psfig, 1 eps fig, final version as publishe
On the Theory of Metal-Insulator Transitions in Gated Semiconductors
It is shown that recent experiments indicating a metal-insulator transition
in 2D electron systems can be interpreted in terms of a simple model, in which
the resistivity is controlled by scattering at charged hole traps located in
the oxide layer. The gate voltage changes the number of charged traps which
results in a sharp change in the resistivity. The observed exponential
temperature dependence of the resistivity in the metallic phase of the
transition follows from the temperature dependence of the trap occupation
number. The model naturally describes the experimentally observed scaling
properties of the transition and effects of magnetic and electric fields.Comment: 4 two-column pages, 4 figures (included in the text
Classical versus Quantum Effects in the B=0 Conducting Phase in Two Dimensions
In the dilute two-dimensional electron system in silicon, we show that the
temperature below which Shubnikov-de Haas oscillations become apparent is
approximately the same as the temperature below which an exponential decrease
in resistance is seen in B=0, suggesting that the anomalous behavior in zero
field is observed only when the system is in a degenerate (quantum) state. The
temperature dependence of the resistance is found to be qualitatively similar
in B=0 and at integer Landau level filling factors.Comment: 3 pages, 3 figure
Metal Insulator transition at B=0 in p-SiGe
Observations are reported of a metal-insulator transition in a 2D hole gas in
asymmetrically doped strained SiGe quantum wells. The metallic phase, which
appears at low temperatures in these high mobility samples, is characterised by
a resistivity that decreases exponentially with decreasing temperature. This
behaviour, and the duality between resistivity and conductivity on the two
sides of the transition, are very similar to that recently reported for high
mobility Si-MOSFETs.Comment: 4 pages, REVTEX with 3 ps figure
Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
A magnetic field applied parallel to the two-dimensional hole system in the
GaAs/AlGaAs heterostructure, which is metallic in the absence of an external
magnetic field, can drive the system into insulating at a finite field through
a well defined transition. The value of resistivity at the transition is found
to depend strongly on density
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