Modelling Load Balancing and Carrier Aggregation in Mobile Networks

In this paper, we study the performance of multicarrier mobile networks. Specifically, we analyze the flow-level performance of two inter-carrier load balancing schemes and the gain engendered by Carrier Aggregation (CA). CA is one of the most important features of HSPA+ and LTE-A networks; it allows devices to be served simultaneously by several carriers. We propose two load balancing schemes, namely Join the Fastest Queue (JFQ) and Volume Balancing (VB), that allow the traffic of CA and non-CA users to be distributed over the aggregated carriers. We then evaluate the performance of these schemes by means of analytical modeling. We show that the proposed schemes achieve quasi-ideal load balancing. We also investigate the impact of mixing traffic of CA and non-CA users in the same cell and show that performance is practically insensitive to the traffic mix.Comment: 8 pages, 6 figures, submitted to WiOpt201

Possible triplet superconductivity in MOSFETs

A theory that predicts a spin-triplet, even-parity superconducting ground state in two-dimensional electron systems is re-analyzed in the light of recent experiments showing a possible insulator-to-conductor transition in such systems. It is shown that the observations are consistent with such an exotic superconductivity mechanism, and predictions are made for experiments that would further corroborate or refute this proposal.Comment: 4 pp., REVTeX, psfig, 1 eps fig, final version as publishe

Universality at integer quantum Hall transitions

We report in this paper results of experimental and theoretical studies of transitions between different integer quantum Hall phases, as well as transition between the insulating phase and quantum Hall phases at high magnetic fields. We focus mainly on universal properties of the transitions. We demonstrate that properly defined conductivity tensor is universal at the transitions. We also present numerical results of a non-interacting electron model, which suggest that the Thouless conductance is universal at integer quantum Hall transitions, just like the conductivity tensor. Finite temperature and system size effects near the transition point are also studied.Comment: 20 pages, 15 figure

On the Theory of Metal-Insulator Transitions in Gated Semiconductors

It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the oxide layer. The gate voltage changes the number of charged traps which results in a sharp change in the resistivity. The observed exponential temperature dependence of the resistivity in the metallic phase of the transition follows from the temperature dependence of the trap occupation number. The model naturally describes the experimentally observed scaling properties of the transition and effects of magnetic and electric fields.Comment: 4 two-column pages, 4 figures (included in the text

Kinetics of the helix-coil transition

Based on the Zimm-Bragg model we study cooperative helix-coil transition driven by a finite-speed change of temperature. There is an asymmetry between the coil-to-helix and helix-to-coil transition: the latter is displayed already for finite speeds, and takes shorter time than the former. This hysteresis effect has been observed experimentally, and it is explained here via quantifying system's stability in the vicinity of the critical temperature. A finite-speed cooling induces a non-equilibrium helical phase with the correlation length larger than in equilibrium. In this phase the characteristic length of the coiled domain and the non-equilibrium specific heat can display an anomalous response to temperature changes. Several pertinent experimental results on the kinetics helical biopolymers are discussed in detail.Comment: 6 pages, 8 figure

Indication of the ferromagnetic instability in a dilute two-dimensional electron system

The magnetic field B_c, in which the electrons become fully spin-polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon. The tendency of B_c to vanish at a finite electron density suggests a ferromagnetic instability in this strongly correlated electron system.Comment: 4 pages, postscript figures included. Revised versio

Classical versus Quantum Effects in the B=0 Conducting Phase in Two Dimensions

In the dilute two-dimensional electron system in silicon, we show that the temperature below which Shubnikov-de Haas oscillations become apparent is approximately the same as the temperature below which an exponential decrease in resistance is seen in B=0, suggesting that the anomalous behavior in zero field is observed only when the system is in a degenerate (quantum) state. The temperature dependence of the resistance is found to be qualitatively similar in B=0 and at integer Landau level filling factors.Comment: 3 pages, 3 figure

A new semiconducting perovskite alloy system made possible by gas-source molecular beam epitaxy

We demonstrate epitaxial thin film growth of the chalcogenide perovskite semiconducting alloy system BaZrS$_{(3-y)}$Se$_y$ using gas-source molecular beam epitaxy (MBE). BaZrS$_3$ is stable in the perovskite structure in bulk form, but the pure selenide BaZrSe$_3$ is not. Here stabilize the full range of compositions y = 0 ... 3 in the perovskite structure, up to and including BaZrSe$_3$, by growing on BaZrS$_3$ buffer layers. The alloy grows by pseudomorphic heteroepitaxy on the sulfide buffer, without interruption in the reflection high energy electron diffraction (RHEED) pattern. The resulting films are environmentally stable and the direct band gap (E$_g$) varies strongly with Se content, as predicted by theory, covering the range E$_g$ = 1.9 ... 1.4 eV for y = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites