Abstracts of the 2014 Brains, Minds, and Machines Summer School

A compilation of abstracts from the student projects of the 2014 Brains, Minds, and Machines Summer School, held at Woods Hole Marine Biological Lab, May 29 - June 12, 2014.This work was supported by the Center for Brains, Minds and Machines (CBMM), funded by NSF STC award CCF-1231216

Mycosis fungoides: is it a Borrelia burgdorferi-associated disease?

Mycosis fungoides (MF) is the most frequently found cutaneous T-cell lymphoma with an unknown aetiology. Several aetiopathogenetic mechanisms have been postulated, including persistent viral or bacterial infections. We looked for evidence of Borrelia burgdorferi (Bb), the aetiologic agent of Lyme disease (LD), in a case study of MF patients from Northeastern Italy, an area with endemic LD. Polymerase chain reaction for the flagellin gene of Bb was used to study formalin-fixed paraffin-embedded lesional skin biopsies from 83 patients with MF and 83 sex- and age-matched healthy controls with homolocalised cutaneous nevi. Borrelia burgdorferi-specific sequence was detected in 15 out of 83 skin samples of patients with MF (18.1%), but in none out of 83 matched healthy controls (P<0.0001). The Bb positivity rates detected in this study support a possible role for Bb in the aetiopathogenesis of MF in a population endemic for LD

Inhalte, Bedingungen und Wirkungen von Unternehmenszielen in Industrie und Handel. Eine empirische Untersuchung

SIGLEBibliothek Weltwirtschaft Kiel C133,155 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Al-Al direct bonding with sub-μm alignment accuracy for millimeter wave SiGe BiCMOS wafer level packaging and heterogeneous integration

In this work, we demonstrate an Al-Al direct bonding process for advanced wafer-level packaging and heterogeneous integration. The wafer bonding process is performed at 300°C with an alignment accuracy of <1 μm enabling fine-pitch wafer-to-wafer interconnections. The electrical performance of the Al-Al direct bonding is analyzed using different types of DC and RF test structures. Low resistance Al-Al bonding interconnections with mΩ-range contact resistance and insertion loss values <0.1 dB per interconnection are realized. An interposer based WLP process flow is developed which enables high performance mm-wave SiGe BiCMOS wafer level packaging applications