Expertensysteme Ueberblick ueber den aktuellen Entwicklungsstand

SIGLETIB: AC 9016+MF / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Materialentwicklung im Rahmen des Rapid Prototyping Engineering (RPE) Abschlussbericht

SIGLEAvailable from TIB Hannover: F98B1221 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Advanced Interconnect Technology (ADIT) Final report

The goal of this project was to study the feasibility of Copper line metallizations for sub-0.5 #mu#m generations in semiconductor technologies, to evaluate the required technological activities and potential risks as well as to indicate possible benefits in particular products. All specifications, the required unit processes and the architectural concepts for an innovative single level Cu metallization have been defined by us and based on this, their practical realization has been achieved by the project consortium. The participating research institutions were given advise in all questions of process optimization and they have been supported with most sophisticated material analytics. In order to fulfill this, SIEMENS had to develop and to apply new methods of material characterization. Within the consortium, the partners managed to provide demonstrators of different architecture which were stable with respect to thermal stress and which could be evaluated electrically. These have been characterized and have been compared amongst each other and with respect to the best known industrial reference metallization (TiN/AlSiCu). Demonstrators in Cu damascene architecture have been found to be superiour over the state of the art metallization with respect to line resistance (approx. 40% lower) current carrying capability (up to three times higher) as well as electromigration lifetime (MTTF approx. ten times higher). We managed to identify and prioritize the most promising candidates for conducting and insulating diffusion barriers, respectively. The work within the project allowed us to estimated the total required technical expenditure and to identify most of the many challenges of a potential switch to a Cu metallization. A theoretical study shows the possible impacts of a Cu metallization on power consumption, performance and switching times for technology generations from 0.5 #mu#m to 0.18 #mu#m. This study reveals significant advantages in changing the line material from Al to Cu compared to using low-k dielectrics and keeping Al as the line material. In discussions with relevant industrial representatives, various potential applications of a Cu metallization have been identified. (orig.)SIGLEAvailable from TIB Hannover: F98B557+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Hochstromanwendungen mit Hochtemperatursupraleitern. Technische Leiterentwicklung und Bau von Funktionsmodellen. Arbeitspaket 1: 2223 BPSCCO Bandleiterherstellung und Bau eines Kabelleiter-Funktionsmodells Abschlussbericht

In the materials sector, the work was primarily concerned with production of 2223 BPSCCO multifilament tape conductors, manufactured by the powder-in-tube method. Starting from 1 m lengths, it was possible over the period covered by the report to increase the conductor lengths to as much as 600 m and attain current densities in the superconductor of j_c=21 kA/cm"2, which puts us in a leading position worldwide. The good progress made with the production process was largely due to bringing in Vacuumschmelze Hanau, whose know-how of multifilament production and wire shaping considerably accelerated the bringing out of long lengths of a 55-filament standard conductor for development of the planned cable demonstrators. Current densities of 41 kA/cm"2 have already be demonstrated in short tape lengths (ca. 0.7 m). The use of AgMg enclosure tubes (77 K) made the Bi-tapes considerably easier to handle. Tensile strengths of up to 120 MPa have been achieved and j_c=16 kA/cm"2 (77 K) was measured on the still unoptimized tapes. Rapid progress with the production of tape conductors made it possible to have ready on time the working model of a 10 m cable conductor, which was produced on a 20 m long computer-controlled cabling machine. There are 4 layers of Bi-tapes with a total length of 2 km and a current carrying capacity of 5000 A - 86% of the design value, the 14% reduction being accounted for by the magnetic field effect (7%) and degradation effects in the production process (7%) - based on a field strength criterion of 1 #mu#V/cm. With the aid of a patented cabling scheme, it was possible to attain a uniform current distribution over all layers and devise a low-loss external serving of 0.8 W/m (at 2000 A). This last is essential for economic operation of future high-performance HTSC cables. (orig.)Available from TIB Hannover: F98B1818+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Sprecherunabhaengige Spracherkennnung fuer zukuenftige Mensch-Maschine-Schnittstellen Schlussbericht

SIGLETIB: AC 9814 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Methoden- und Werkzeugentwicklung fuer den Mikrosystementwurf (METEOR). Teilvorhaben: TP 1 - Entwurfsumgebungen. TP 2 - Werkzeuge und Schnittstellen. Teilprojekte: AP 1.2 - Entwurfsablaeufe. AP 2.1 - Beschreibung und Modellierung physikalischer Systeme. AP 2.2 - Schnittstellen und Standards Schlussbericht

SIGLEAvailable from TIB Hannover: DtF QN1(61,14) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

MIMOSE. Herstellung und messtechnische Charakterisierung von duennen PVD-Metalloxidschichten fuer den Einsatz in Mikrogassensoren. Teilvorhaben: Entwicklung von Gassensoren auf der Basis von reaktiv gesputterten halbleitenden Metalloxiden Abschlussbericht

For the development of high-temperature operated metal oxide gas sensors high-temperature stable substrates are required as base which do not interact with the gas-sensitive layer. Hence, new substrate systems were developed. They contain a Al_2O_3 ceramic and a SiO_2 diffusion barrier deposited on the ceramic by a CVD process. This substrate system has proven to be stable up to 1100 C. Interactions with Ga_2O_2 as gas-sensitive layer were not observed. However, this substrate system is also suitable as carrier for a lot of other gas-sensing materials. Using this stable substrate system the first stoichiometric thin films from the high-temperature stable perowskite BaSnO_3 were prepared. The influences of grain barriers and bulk defects on the dependences of the electrical conductivity on temperature and oxygen partial pressure were determined by high-temperature Hall-measurements. At high temperatures this material does not show a high sensitivity of methane, but a rather high selectivity to this gas. Moreover it is shown that the gas-sensitive properties of high-temperature stable materials could be influenced by specific modifications of its surface by some monolayers of an additional material. In this way, depending on annealing and operating temperature rather selective ammonia and oxygen sensors were prepared by a modification of the Ga_2O_3 thin films using 300 nm AlVO_4. In contrast, a surface modification with 300 nm SiO_2 results in a selective and high sensitive hydrogen sensor. (orig.)Available from TIB Hannover: F97B1830+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Zuechtung und Charakterisierung von SiC-Einkristallen und Epitaxieschichten Abschlussbericht

It was aim of the project, to catch up to the international state of the art concerning the SiC material development and thus to ensure the supply with device suited SiC substrates on a long term basis. By a joint effort of crystal growth experiments and numerical simulation of the sublimation growth technique it was possible to reduce the defect density in the grown crystals significantly (micropipe density 70-400 cm"-"2 depending on wafer diameter, dislocation density 5000 cm"-"2-2000 cm"-"2, doping range n=1-5 10"1"8 cm"-"3). The diameter of the crystals was enlarged from 25 to 35 mm. The above mentioned data already partly meet the properties of commercially available substrates of US manufacturers. SiC epitaxy - an important link between substrate and device technology - served as a sensible characterization method for the quality of SiC substrates produced either externally or within this project. It appears that not only the crystal quality but also the surface properties of the SiC substrates have important influence on the characteristics of the epitaxial layers. For the epitaxial process itself significant improvements could be achieved as well (background impurity concentration <10"1"4 cm"-"3, thickness inhomogeneity <5%). First demonstrator devices (Schottky diodes) were built on substrates manufactured within this project, and, thereby, the suitability of these substrates for device technology was tested. The SiC bulk crystals and epitaxial layers grown during the project were analyzed with optical and electrical characterization tools (partly new developed). The results served for optimization of the respective manufacturing technique. For SiC power electronics applications, both large defect free areas and an as high as possible substrate conductivity are necessary. Therefore further research efforts are mandatory. In order to reduce the manufacturing costs of SiC devices, it is furthermore very important to increase the crystal diameter to two inches. (orig.)SIGLEAvailable from TIB Hannover: F97B2254+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Description of V and V methods Technical paper

SIGLETIB: AC 9071+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekRepr.DEGerman

Comparative study of methods for requirements engineering and design

SIGLECopy held by FIZ Karlsruhe; available from UB/TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman