Charge photogeneration and transport in AgBis2 nanocrystal films for photovoltaics

Solution-processed AgBiS2 nanocrystal films are a promising material for nontoxic, earth-abundant solar cells. While solar cells with good device efficiency are demonstrated, so far, hardly anything is known about charge generation, transport, and recombination processes in these films. Here, a photoinduced time-resolved microwave conductivity study on AgBiS2 nanocrystal films is presented. By modeling the experimental data with density-dependent recombination processes, the product of the temperature-dependent electron and hole quantum yield and mobility, and the electron and hole recombination kinetics are determined

Temperature dependence of the charge carrier mobility in gated quasi-one-dimensional systems

The many-body Monte Carlo method is used to evaluate the frequency dependent conductivity and the average mobility of a system of hopping charges, electronic or ionic on a one-dimensional chain or channel of finite length. Two cases are considered: the chain is connected to electrodes and in the other case the chain is confined giving zero dc conduction. The concentration of charge is varied using a gate electrode. At low temperatures and with the presence of an injection barrier, the mobility is an oscillatory function of density. This is due to the phenomenon of charge density pinning. Mobility changes occur due to the co-operative pinning and unpinning of the distribution. At high temperatures, we find that the electron-electron interaction reduces the mobility monotonically with density, but perhaps not as much as one might intuitively expect because the path summation favour the in-phase contributions to the mobility, i.e. the sequential paths in which the carriers have to wait for the one in front to exit and so on. The carrier interactions produce a frequency dependent mobility which is of the same order as the change in the dc mobility with density, i.e. it is a comparably weak effect. However, when combined with an injection barrier or intrinsic disorder, the interactions reduce the free volume and amplify disorder by making it non-local and this can explain the too early onset of frequency dependence in the conductivity of some high mobility quasi-one-dimensional organic materials.Comment: 9 pages, 8 figures, to be published in Physical Review

Stacking-Order-Dependent Excitonic Properties Reveal Interlayer Interactions in Bulk ReS₂

Rhenium disulfide, a member of the transition metal dichalcogenide family of semiconducting materials, is unique among 2D van der Waals materials due to its anisotropy and, albeit weak, interlayer interactions, confining excitons within single atomic layers and leading to monolayer-like excitonic properties even in bulk crystals. While recent work has established the existence of two stacking modes in bulk, AA and AB, the influence of the different interlayer coupling on the excitonic properties has been poorly explored. Here, we use polarization-dependent optical measurements to elucidate the nature of excitons in AA and AB-stacked rhenium disulfide to obtain insight into the effect of interlayer interactions. We combine polarization-dependent Raman with low-temperature photoluminescence and reflection spectroscopy to show that, while the similar polarization dependence of both stacking orders indicates similar excitonic alignments within the crystal planes, differences in peak width, position, and degree of anisotropy reveal a different degree of interlayer coupling. DFT calculations confirm the very similar band structure of the two stacking orders while revealing a change of the spin-split states at the top of the valence band to possibly underlie their different exciton binding energies. These results suggest that the excitonic properties are largely determined by in-plane interactions, however, strongly modified by the interlayer coupling. These modifications are stronger than those in other 2D semiconductors, making ReS2 an excellent platform for investigating stacking as a tuning parameter for 2D materials. Furthermore, the optical anisotropy makes this material an interesting candidate for polarization-sensitive applications such as photodetectors and polarimetry.</p

Predicting Solar Cell Performance from Terahertz and Microwave Spectroscopy

Mobilities and lifetimes of photogenerated charge carriers are core properties of photovoltaic materials and can both be characterized by contactless terahertz or microwave measurements. Here, the expertise from fifteen laboratories is combined to quantitatively model the current voltage characteristics of a solar cell from such measurements. To this end, the impact of measurement conditions, alternate interpretations, and experimental inter laboratory variations are discussed using a Cs,FA,MA Pb I,Br 3 halide perovskite thin film as a case study. At 1 sun equivalent excitation, neither transport nor recombination is significantly affected by exciton formation or trapping. Terahertz, microwave, and photoluminescence transients for the neat material yield consistent effective lifetimes implying a resistance free JV curve with a potential power conversion efficiency of 24.6 . For grainsizes above amp; 8776;20 nm, intra grain charge transport is characterized by terahertz sum mobilities of amp; 8776;32 cm2 V amp; 8722;1 s amp; 8722;1. Drift diffusion simulations indicate that these intra grain mobilities can slightly reduce the fill factor of perovskite solar cells to 0.82, in accordance with the best realized devices in the literature. Beyond perovskites, this work can guide a highly predictive characterization of any emerging semiconductor for photovoltaic or photoelectrochemical energy conversion. A best practice for the interpretation of terahertz and microwave measurements on photovoltaic materials is presente

Ultrafast charge cooling and carrier multiplication in semiconductor nanocrystals and superlattices

We studied charge carrier photogeneration, cooling, carrier multiplication (CM) and charge mobility and decay in: a) isolated PbSe nanocrystals in solution, b) films of PbSe nanocrystals coupled by organic ligands, and c) 2D percolative networks of epitaxially connected PbSe nanocrystals. The studies were performed using ultrafast pump-probe spectroscopy with optical or terahertz/microwave conductivity detection. The effects of electronic coupling between the nanocrystals on charge mobility were characterized by frequency-resolved microwave and terahertz photoconductivity measurements. Reducing the size of ligand molecules between nanocrystals in a film strongly increases the charge mobility. Direct connection of nanocrystals in a percolative network yielded a sum of electron and hole mobilities as high as 270±10 cm2V-1s-1. We found that a high mobility is essential for multiple electron-hole pairs formed via CM to escape from recombination. The coupling between the nanocrystals was found to strongly affect the competition between cooling of hot charges by phonon emission and CM. In percolative networks of connected nanocrystals CM is much more efficient than in films with ligands between the nanocrystals. In the e networks CM occurs in a step-like fashion with threshold near the minimum photon energy of twice the band gap.</p

Ultrafast charge cooling and carrier multiplication in semiconductor nanocrystals and superlattices

We studied charge carrier photogeneration, cooling, carrier multiplication (CM) and charge mobility and decay in: a) isolated PbSe nanocrystals in solution, b) films of PbSe nanocrystals coupled by organic ligands, and c) 2D percolative networks of epitaxially connected PbSe nanocrystals. The studies were performed using ultrafast pump-probe spectroscopy with optical or terahertz/microwave conductivity detection. The effects of electronic coupling between the nanocrystals on charge mobility were characterized by frequency-resolved microwave and terahertz photoconductivity measurements. Reducing the size of ligand molecules between nanocrystals in a film strongly increases the charge mobility. Direct connection of nanocrystals in a percolative network yielded a sum of electron and hole mobilities as high as 270±10 cm2V-1s-1. We found that a high mobility is essential for multiple electron-hole pairs formed via CM to escape from recombination. The coupling between the nanocrystals was found to strongly affect the competition between cooling of hot charges by phonon emission and CM. In percolative networks of connected nanocrystals CM is much more efficient than in films with ligands between the nanocrystals. In the e networks CM occurs in a step-like fashion with threshold near the minimum photon energy of twice the band gap.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.ChemE/Opto-electronic MaterialsLibrary TU Delf

Developments and Challenges Involving Triplet Transfer across Organic/Inorganic Heterojunctions for Singlet Fission and Photon Upconversion

In this Perspective, we provide an overview of recent advances in harvesting triplets for photovoltaic and photon upconversion applications from two angles. In singlet fission-sensitized solar cells, the triplets are harvested through a low band gap semiconductor such as Si. Recent literature has shown how a thin interlayer or orientation of the singlet fission molecule can successfully lead to triplet transfer. On the other hand, the integration of transition metal dichalcogenides (TMDCs) with suitable organic molecules has shown triplet-triplet annihilation upconversion (TTA-UC) of near-infrared photons. We consider the theoretical aspect of the triplet transfer process between a TMDC and organic semiconductors. We discuss possible bottlenecks that can limit the harvesting of energy from triplets and perspectives to overcome these.ChemE/Opto-electronic Material

Biexcitons in highly excited CdSe nanoplatelets

We present the phase diagram of free charges (electrons and holes), excitons, and biexcitons in highly excited CdSe nanoplatelets that predicts a crossover to a biexciton-dominated region at easily attainable low temperatures or high photoexcitation densities. Our findings extend previous work describing only free charges and excitons by introducing biexcitons into the equation of state, while keeping the exciton and biexciton binding energies constant in view of the relatively low density of free charges in this material. Our predictions are experimentally testable in the near future and offer the prospect of creating a quantum degenerate, and possibly even superfluid, biexciton gas. Furthermore, we also provide simple expressions giving analytical insight into the regimes of photoexcitation densities and temperatures in which excitons and biexcitons dominate the response of the nanoplatelets.</p

The mechanism of long-range exciton diffusion in a nematically organized porphyrin layer

The exciton diffusion length in a nematically organized meso-tetra(4-n-butylphenyl)porphyrin (TnBuPP) layer was found to exceed 40 nm at a temperature of 90 K and to be equal to 22 ± 3 nm at 300 K. The exciton diffusion coefficient decreases from =3.1 × 10-6 m2/s at 90 K to (2.5 ± 0.5) × 10-7 m2/s at 300 K. This thermal deactivation is attributed to exciton motion via a band mechanism. The motion of an exciton is not limited by polaronic effects; that is, the deformation of the atomic lattice around the exciton. The absence of polaronic self-trapping implies that the exciton diffusion coefficient can be enhanced by improvement of structural order and rigidity of the material