Current direction induced rectification effect on (integer) quantized Hall plateaus

Current polarization induced rectification of the quantized Hall plateaus (QHPs) is studied within a Hartree type mean field approximation for asymmetrically depleted samples. We first investigate the existence of the current carrying incompressible strips (ISs), by solving the self-consistent equations, and their influence on magneto-transport (MT) properties. Next, the widths of the ISs are examined in terms of the steepness of the confining potential profile considering gate defined Hall bars. The corresponding MT coefficients are calculated using a local Ohm's law for a large fixed current and are compared for symmetric and asymmetric depleted samples. We predict that, the extend of the QHPs strongly depend on the current polarization, in the out of linear response regime, when considering asymmetrically depleted samples. Our results, concerning the extend of the QHPs depending on the current polarization are in contrast to the ones of the conventional theories of the integer quantized Hall effect (IQHE). We propose certain experimental conditions to test our theoretical predictions at high mobility, narrow samples.Comment: 4 pages, 3 figures, submitted to Phys. Re

Investigations on unconventional aspects in the quantum Hall regime of narrow gate defined channels

We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates on the surfaces of GaAs/AlGaAs heterostructures. In the low mobility regime the classical Hall resistance line is proportional to the magnetic field as measured in the high temperature limit and cuts through the center of each Hall plateau. For high mobility samples we observe in linear response measurements, that this symmetry is broken and the classical Hall line cuts the plateaus not at the center but at higher magnetic fields near the edges of the plateaus. These experimental results confirm the unconventional predictions of a model for the quantum Hall effect taking into account mutual screening of charge carriers within the Hall bar. The theory is based on solving the Poisson and Schr\"odinger equations in a self-consistent manner.Comment: EP2DS-17 Proceedings, 6 Pages, 2 Figure

Interaction mediated asymmetries of the quantized Hall effect

Experimental and theoretical investigations on the integer quantized Hall effect in gate defined narrow Hall bars are presented. At low electron mobility the classical (high temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high mobility samples the intersection point, at even filling factors \nu = 2; 4 ..., is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i. e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at \nu= 1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.Comment: 4 pages, 3 figure