The roles of charged and neutral oxidising species in silicon oxidation from ab initio calculations

We examine the roles of charged oxidising species based on extensive ab initio density functional theory calculations. Six species are considered: interstitial atomic O, O-, O2- and molecular species: O-2, O-2(-), O-2(2-) We calculate their incorporation energies into bulk silicon dioxide, vertical electron affinities and diffusion barriers. In our calculations, we assume that the electrons responsible for the change of charge state come from the silicon conduction band, however, the generalisation to any other source of electrons is possible, and hence, our results are also relevant to electron-beam assisted oxidation and plasma oxidation. The calculations yield information about the relative stability of oxidising species, and the possible transformations between them and their charging patterns. We discuss the ability to exchange O atoms between the mobile species and the host lattice during diffusion, since this determines whether or not isotope exchange is expected. Our results show very clear trends: (1) the molecular species are energetically preferable over alo,nic ones, (2) the charged species are energetically more favourable than neutral ones, (3) diffusion of atomic species (O, O-, O2-) will result in oxygen exchange, whereas the diffusion of nzoleculai species (O-2, O-2(-), O-2(2-)) is not likely to lead to a significant exchange with the lattice. On the basis of our calculation, we predict that charging of oxidising species may play a key role in silicon oxidation process. (C) 2000 Elsevier Science Ltd. All rights reserved

Mechanism of phase transitions and the electronic density of states in (La,Sm)FeAsO1−x_{1-x}Fx_x from ab initio calculations

The structure and electronic density of states in layered LnFeAsO$_{1-x}$F$_x$ (Ln=La,Sm; $x$=0.0, 0.125, 0.25) are investigated using density functional theory. For the $x$=0.0 system we predict a complex potential energy surface, formed by close-lying single-well and double-well potentials, which gives rise to the tetragonal-to-orthorhombic structural transition, appearance of the magnetic order, and an anomaly in the specific heat capacity observed experimentally at temperatures below $\sim$140--160 K. We propose a mechanism for these transitions and suggest that these phenomena are generic to all compounds containing FeAs layers. For $x>$0.0 we demonstrate that transition temperatures to the superconducting state and their dependence on $x$ correlate well with the calculated magnitude of the electronic density of states at the Fermi energy.Comment: 4 pages, 3 figures, 1 tabl

Correlated Defect Creation in HfO2 films

Spatially correlated defect generation process has been proposed to be responsible for TDDB Weibull slope measured in HfO 2 . We investigated possible mechanisms for correlated defect production in amorphous (a) HfO 2 films under applied stress bias using ab initio simulations. During bias application, electron injection into these films leads to the localization of up to two electrons at intrinsic trapping sites present due to the structural disorder in amorphous structures and to formation of O vacancies. Trapping of two extra electrons at a pre-exiting O vacancy facilitate the formation of a new vacancies affecting TDDB statistics and its dependence on the film thickness

A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling

Despite extensive experimental and theoretical studies, the atomistic mechanisms responsible for dielectric breakdown (BD) in amorphous (a)-SiO2 are still poorly understood. A number of qualitative physical models and mathematical formulations have been proposed over the years to explain experimentally observable statistical trends. However, these models do not provide clear insight into the physical origins of the BD process. Here we investigate the physical mechanisms responsible for dielectric breakdown in a-SiO2 using a multi-scale approach where the energetic parameters derived from a microscopic mechanism are used to predict the macroscopic degradation parameters of BD, i.e. time-dependent dielectric breakdown (TDDB) statistics, and its voltage dependence. Using this modeling framework, we demonstrate that trapping of two electrons at intrinsic structural precursors in a-SiO2 is responsible for a significant reduction of the activation energy for Si-O bond breaking. This results in a lower barrier for the formation of O vacancies and allows us to explain quantitatively the TDDB data reported in the literature for relatively thin (3-9nm) a-SiO2 oxide films

Modelling charge self-trapping in wide-gap dielectrics: Localization problem in local density functionals

We discuss the adiabatic self-trapping of small polarons within the density functional theory (DFT). In particular, we carried out plane-wave pseudo-potential calculations of the triplet exciton in NaCl and found no energy minimum corresponding to the self-trapped exciton (STE) contrary to the experimental evidence and previous calculations. To explore the origin of this problem we modelled the self-trapped hole in NaCl using hybrid density functionals and an embedded cluster method. Calculations show that the stability of the self-trapped state of the hole drastically depends on the amount of the exact exchange in the density functional: at less than 30% of the Hartree-Fock exchange, only delocalized hole is stable, at 50% - both delocalized and self-trapped states are stable, while further increase of exact exchange results in only the self-trapped state being stable. We argue that the main contributions to the self-trapping energy such as the kinetic energy of the localizing charge, the chemical bond formation of the di-halogen quasi molecule, and the lattice polarization, are represented incorrectly within the Kohn-Sham (KS) based approaches.Comment: 6 figures, 1 tabl

Optical signatures of intrinsic electron localization in amorphous SiO2

We measure and analyse the optical absorption spectra of three silica glass samples irradiated with 1 MeV electrons at 80 K, where self-trapped holes are stable, and use ab initio calculations to demonstrate that these spectra contain a signature of intrinsic electron traps created as counterparts to the holes. In particular, we argue that optical absorption bands peaking at 3.7, 4.7, and 6.4 eV belong to strongly localised electrons trapped at precursor sites in amorphous structure characterized by strained Si–O bonds and O–Si–O angles greater than 132°. These results are important for our understanding of the properties of silica glass and other silicates as well as the reliability of electronic and optical devices and for luminescence dating

Structure and diffusion of intrinsic defects, adsorbed hydrogen, and water molecules at the surface of alkali-earth fluorides calculated using density functional theory

Using periodic density functional theory, we calculate the structure and migration energies of fluorine vacancies and interstitials in the bulk and at the stoichiometric bulk-truncated surface of three alkali-earth fluorides: CaF2, SrF2, and BaF2. We then study the adsorption of water and hydrogen, in both molecular and dissociated form, at the ideal surface, and at neutral and charged vacancies in the surface and subsurface layers. The results demonstrate that in nearly all cases molecular adsorption is strongly favored. For the most probable configurations on the surfaces, we also studied the migration paths and barriers, and found that water is highly mobile on the surface, even when adsorbed at defects. In general, CaF2 and SrF2 show similar behavior with respect to water, while adsorption energies and migration barriers for BaF2 are smaller. Finally, we discuss our results in the context of recent experimental Atomic Force Microscopy studies on CaF2 and compare to calculations on other insulating surfaces.Peer reviewe

Mechanism of Interstitial Oxygen Diffusion in Hafnia

We have performed density functional calculations of oxygen incorporation and diffusion in monoclinic hafnia (HfO2) for a range of oxygen charge states. The calculations demonstrate that oxygen favors atomic incorporation and that O2− is the most stable species. We find that oxygen interstitials diffuse via exchange with lattice oxygen sites in hafnia, and that O− species have the smallest diffusion barrier.Peer reviewe

P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory

We have investigated the p-dopant potential of 14 different impurities (Be, B, F, Mg, Al, Ca, Sc, Cu, Zn, Ga, In, Ba, Pt, and Tl) within 4H-SiC via Density Functional Theory (DFT) calculations using a hybrid density functional. We analyse the incorporation energies of impurity atoms on Si and C sites as well as the character of lattice distortion induced by impurities. The calculated thermal ionization energies confirm that Al and Ga on the Si site are the best candidates for p-doping of 4H-SiC. Although we find some correlation of incorporation energies with atomic radii of impurities, the difference in chemical interaction with neighbouring atoms and strong lattice distortions play important roles in determining the impurity incorporation energies and charge transition levels. We find Al to still be the best and most industrially viable p-dopant for 4H-SiC