Nonlinear Optical Susceptibilities and Linear Absorption in Phosphorene Nanoribbons: Ab initio study

Using Density Functional Theory (DFT) method we compute linear optical absorption spectra and nonlinear optical susceptibilities of hydrogen passivated armchair and zigzag Phosphorous Nanoribbons (aPNR and zPNR) as well as \alpha-phase phosphorous monolayer. We observe that: (a) Crystallographic direction has a strong effect on the band edge absorption which causes optical anisotropy as well as a red shift of absorption spectra by increasing the nanoribbon width. (b) The absorption values are in the order of $10^{5} cm^{-1}$ which are similar to the experimentally measured values. (c) There is two orders of magnitude enhancement of the 2nd order nonlinear optical susceptibility, $\chi^{(2)}$, in nanoribbons which emanates from breaking the centro-symmetric structure of a monolayer phosphorene by hydrogen surface terminations. (d) Chief among our results is that the 3rd order susceptibility, $\chi^{(3)}$, for phosphorene monolayer and nanoribbons are about $~10^{-13}$ esu ($~10^{-21} \frac{m^{2}}{V^{2}}$) which are in close agreement with experimentally reported values as well as a recently calculated value based on semi-analytic method. This strongly supports reliability of our method in calculating nonlinear optical susceptibilities of phosphorene and in general other nanostructures. Enhanced 2nd order optical nonlinearity in phosphorene promises better second harmonic and frequency difference (THz) generation for photonics applications.Comment: 18 pages, 4 figures, 4 tables, 48 reference

Electronic and Optical Properties of Silicon Nanowires: Theory and Modeling

Narrow silicon nanowires host a rich set of physical phenomena. Understanding these phenomena will open new opportunities for applications of silicon nanowires in optoelectronic devices and adds more functionality to silicon especially in those realms that bulk silicon may not operate remarkably. Compatibility of silicon nanowires with the mainstream fabrication technology is also advantageous. The main theme of this thesis is finding the possibility of using silicon nanowires in light sources; laser and light emitting diodes. Using Tight Binding (TB) and ab-initio Density Functional Theory (DFT) methods it was shown that axial strain can induce significant changes in the effective mass, density of states and bandgap of silicon nanowires. Generality of the observed effects was proven by investigating nanowires of different crystallography, diameter and material (e.g. germanium nanowires). The observed direct to indirect bandgap conversion suggests that strain is able to modulate the light emission properties of silicon nanowires. To investigate this possibility, spontaneous emission time was formulated using perturbation theory including Longitudinal Optical (LO) and Acoustic (LA) phonons. It was observed that corresponding to bandgap conversion, the spontaneous emission time can be modulated by more than one order of magnitude. This emanates from bandgap conversion and symmetry change of wave function in response to strain. A mechanism for population inversion was proposed in the thesis which is based on the Ensemble Monte Carlo (EMC) study of carrier statistics in direct and indirect conduction sub bands. By calculating all possible electron-phonon scattering mechanisms which may deplete the already populated indirect subband, it was shown that at different temperatures and under different electric fields there is a factor of 10 difference between the population of indirect and direct sub bands. This suggests that population inversion can be achieved by biasing an already strained nanowire in its indirect bandgap state. The light emission is possible then by releasing or inverting the strain direction. A few ideas of implementing this experiment were proposed as a patent application. Furthermore the photo absorption of silicon nanowires was calculated using TB method and the role of diameter, optical anisotropy and strain were investigated on band-edge absorption

Optical Transitions and Localized Edge States in Skewed Phosphorene Nanoribbons

Using the Tight Binding (TB) parameters extracted from Density Functional Theory (DFT) and Recursive Green's Function method, it is shown that skewed-zigzag black phosphorous (phosphorene) nanoribbons obtain large and tuneable bandgap in response to vertical and transverse electric fields. Depending on the direction of the applied field the mid-gap states could possess the localized or metallic nature i.e. non-zero mid-gap density of states. Adjustability of the bandgap and optical dipole transition matrix elements are explained based on the symmetry of involved band edge states. This promises new electronic and optical devices based on phosphorene nanoribbons.Comment: 21 pages, 12 Figures. newly amended version, June 29, 201

Gunn Effect in Silicon Nanowires: Charge Transport under High Electric Field

Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy bands in a semiconductor. If applying a voltage (electric field) transfers electrons from an energy sub band of a low effective mass to a second one with higher effective mass, then the current drops. This manifests itself as a negative slope or NDR in the I-V characteristics of the device which is in essence due to the reduction of electron mobility. Recalling that mobility is inversely proportional to electron effective mass or curvature of the energy sub band. This effect was observed in semiconductors like GaAs which has direct bandgap of very low effective mass and its second indirect sub band is about 300 meV above the former. More importantly a self-repeating oscillation of spatially accumulated charge carriers along the transport direction occurs which is the artifact of NDR, a process which is called Gunn oscillation and was observed by J. B. Gunn. In sharp contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. Using Density Functional Theory (DFT), semi-empirical 10 orbital ($sp^{3}d^{5}s^{*}$) Tight Binding (TB) method and Ensemble Monte Carlo (EMC) simulations we show for the first time that (a) Gunn Effect can be induced in narrow silicon nanowires with diameters of 3.1 nm under 3 % tensile strain and an electric field of 5000 V/cm, (b) the onset of NDR in I-V characteristics is reversibly adjustable by strain and (c) strain can modulate the value of resistivity by a factor 2.3 for SiNWs of normal I-V characteristics i.e. those without NDR. These observations are promising for applications of SiNWs in electromechanical sensors and adjustable microwave oscillators.Comment: 18 pages, 6 figures, 63 reference

Modeling and Harmonic Balance Analysis of Parametric Amplifiers for Qubit Read-out

Predicting the performance of traveling-wave parametric amplifiers (TWPAs) based on nonlinear elements like superconducting Josephson junctions (JJs) is vital for qubit read-out in quantum computers. The purpose of this article is twofold: (a) to demonstrate how nonlinear inductors based on combinations of JJs can be modeled in commercial circuit simulators, and (b) to show how the harmonic balance (HB) is used in the reliable prediction of the amplifier performance e.g., gain and pump harmonic power conversion. Experimental characterization of two types of TWPA architectures is compared with simulations to showcase the reliability of the HB method. We disseminate the modeling know-how and techniques to new designers of parametric amplifiers.Comment: 13 pages, 15 figure

Three-wave mixing traveling-wave parametric amplifier with periodic variation of the circuit parameters

We report on the implementation of a near-quantum-limited, traveling-wave parametric amplifier that uses three-wave mixing (3WM). To favor amplification by 3WM, we use superconducting nonlinear asymmetric inductive element (SNAIL) loops, biased with a dc magnetic flux. In addition, we equip the device with dispersion engineering features to create a stopband at the second harmonic of the pump and suppress the propagation of the higher harmonics that otherwise degrade the amplification. With a chain of 440 SNAILs, the amplifier provides up to 20 dB gain and a 3-dB bandwidth of 1 GHz. The added noise by the amplifier is found to be less than one photon