Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

We performed systematic low-temperature (T = 350 mK–15 K) magnetotransport measurements on the two-dimensional hole gas with various sheet carrier densities Ps = (0.57–2.1)×1012 cm–2 formed in the strained Ge channel modulation-doped (MOD) SiGe heterostructures grown on Si substrates. It was found that the effective hole mass deduced by temperature dependent Shubnikov–de Hass oscillations increased monotonically from (0.087±0.05)m0 to (0.19±0.01)m0 with the increase of Ps, showing large band nonparabolicity in strained Ge. In contrast to this result, the increase of the mobility with increasing Ps (up to 29 000 cm2/V s) was observed, suggesting that Coulomb scattering played a dominant role in the transport of the Ge channel at low temperatures. In addition, the Dingle ratio of the transport time to the quantum lifetime was found to increase with increasing Ps, which was attributed to the increase of remote impurity scattering with the increase of the doping concentration in MOD SiGe layers

Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.Comment: Proceedings of the 12th Asia Pacific Physics Conferenc

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

To extract the room-temperature drift mobility and sheet carrier density of two-dimensional hole gas (2DHG) that form in Ge strained channels of various thicknesses in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures, the magnetic field dependences of the magnetoresistance and Hall resistance at temperature of 295 K were measured and the technique of maximum entropy mobility spectrum analysis was applied. This technique allows a unique determination of mobility and sheet carrier density of each group of carriers present in parallel conducting multilayers semiconductor heterostructures. Extremely high room-temperature drift mobility (at sheet carrier density) of 2DHG 2940 cm2 V–1 s–1 (5.11×1011 cm–2) was obtained in a sample with a 20 nm thick Ge strained channel

Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Type-II Quantum Dots

We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quantum dot, the ground state of an exciton experiences a change in its angular momentum. Our results provide the experimental evidence for the phase coherence of a localized electron wave function in group-IV Ge/Si self-assembled quantum structures.Comment: 4 pages, 4 figure

Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $\alpha{}| \uparrow \downarrow >+\beta{}| \downarrow \uparrow >$ and $-\beta{}| \uparrow \downarrow > + \alpha{}| \downarrow \uparrow >$ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and $| \uparrow \uparrow >$ or $| \downarrow \downarrow >$ states are observed clearly. A continuous change of $\alpha{}$ and $\beta{}$ with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.Comment: 6 pages, 5 figure

Heavy-Mass Behavior of Ordered Perovskites ACu3Ru4O12 (A = Na, Ca, La)

We synthesized ACu3Ru4O12 (A = Na, Na0.5Ca0.5, Ca, Ca0.5La0.5, La) and measured their DC magnetization, AC susceptibility, specific heat, and resistivity, in order to investigate the effects of the hetero-valent substitution. A broad peak in the DC magnetization around 200 K was observed only in CaCu3Ru4O12, suggesting the Kondo effect due to localized Cu2+ ions. However, the electronic specific heat coefficients exhibit large values not only for CaCu3Ru4O12 but also for all the other samples. Moreover, the Wilson ratio and the Kadowaki-Woods ratio of our samples are all similar to the values of other heavy-fermion compounds. These results question the Kondo effect as the dominant origin of the mass enhancement, and rather indicate the importance of correlations among itinerant Ru electrons.Comment: 6 pages, 6 figures, to be published in J. Phys. Soc. Jp