1,223 research outputs found
Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
We develop quantum dots in a single layered MOS structure using an undoped
Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are
accumulated in the Si channel. Clear Coulomb diamond and double dot charge
stability diagrams are measured. The temporal fluctuation of the current is
traced, to which we apply the Fourier transform analysis. The power spectrum of
the noise signal is inversely proportional to the frequency, and is different
from the inversely quadratic behavior known for quantum dots made in doped
wafers. Our results indicate that the source of charge noise for the doped
wafers is related to the 2DEG dopant.Comment: Proceedings of the 12th Asia Pacific Physics Conferenc
3-D Magnetic field analysis by using special elements
Three-dimensional special elements, called the gap element, the expanding element, and the shielding element, have been conceived for discretizing narrow gaps in an iron core, the long legs of a transformer core, and thin shielding plates. The concept of the 3D special element and its finite-element formulation are described. The special elements are applied to several models, and the effects of the elements on accuracy and CPU time are discussed. It is shown that CPU time can be reduced by using the special elements</p
Comparison of different finite elements for 3-D eddy current analysis
In order to evaluate the best type of element for the finite-element analysis of 3-D eddy currents, a fundamental model is analyzed using the usual first-order tetrahedral, triangular prism, and brick nodal elements, and also the brick edge element. The effects of the types of elements on the flux and eddy-current distributions are investigated using the A-φ method and the T-Ω method. It is concluded that the brick edge element is best from the viewpoints of accuracy and CPU time</p
Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
Electron paramagnetic resonance of ensembles of phosphorus donors in silicon
has been detected electrically with externally applied magnetic fields lower
than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine
term rather than by the Zeeman terms at such low magnetic fields, superposition
states and
were formed
between phosphorus electron and nuclear spins, and electron paramagnetic
resonance transitions between these superposition states and or states are observed clearly. A
continuous change of and with the magnetic field was
observed with a behavior fully consistent with theory of phosphorus donors in
silicon.Comment: 6 pages, 5 figure
Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at
low temperatures is reported. Metallic temperature dependence of resistivity is
observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T,
where the spins of electrons are expected to be polarized completely.
Correlation between the spin polarization and minima in the diagonal
resistivity observed by rotating the samples for various total strength of the
magnetic field is also investigated.Comment: 3 pages, RevTeX, 4 eps-figures, conference paper (EP2DS-13
Heavy-Mass Behavior of Ordered Perovskites ACu3Ru4O12 (A = Na, Ca, La)
We synthesized ACu3Ru4O12 (A = Na, Na0.5Ca0.5, Ca, Ca0.5La0.5, La) and
measured their DC magnetization, AC susceptibility, specific heat, and
resistivity, in order to investigate the effects of the hetero-valent
substitution. A broad peak in the DC magnetization around 200 K was observed
only in CaCu3Ru4O12, suggesting the Kondo effect due to localized Cu2+ ions.
However, the electronic specific heat coefficients exhibit large values not
only for CaCu3Ru4O12 but also for all the other samples. Moreover, the Wilson
ratio and the Kadowaki-Woods ratio of our samples are all similar to the values
of other heavy-fermion compounds. These results question the Kondo effect as
the dominant origin of the mass enhancement, and rather indicate the importance
of correlations among itinerant Ru electrons.Comment: 6 pages, 6 figures, to be published in J. Phys. Soc. Jp
Energy transformation cost for the Japanese mid-century strategy
The costs of climate change mitigation policy are one of the main concerns in decarbonizing the economy. The macroeconomic and sectoral implications of policy interventions are typically estimated by economic models, which tend be higher than the additional energy system costs projected by energy system models. Here, we show the extent to which policy costs can be lower than those from conventional economic models by integrating an energy system and an economic model, applying Japan’s mid-century climate mitigation target. The GDP losses estimated with the integrated model were significantly lower than those in the conventional economic model by more than 50% in 2050. The representation of industry and service sector energy consumption is the main factor causing these differences. Our findings suggest that this type of integrated approach would contribute new insights by providing improved estimates of GDP losses, which can be critical information for setting national climate policies
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