Transfer Characteristics in Graphene Field-Effect Transistors with Co Contacts

Graphene field-effect transistors with Co contacts as source and drain electrodes show anomalous distorted transfer characteristics. The anomaly appears only in short-channel devices (shorter than approximately 3 micrometers) and originates from a contact-induced effect. Band alteration of a graphene channel by the contacts is discussed as a possible mechanism for the anomalous characteristics observed.Comment: 10 pages, 3 figures, Appl. Phys. Let

Logic Ciucuits Using Solution-processed Single-walled Carbon Nanotue Transistors

This letter reports on the realization of logic circuits employing solution-processed networks of single-walled carbon nanotubes. We constructed basic logic gates (inverter, NAND and NOR) with n- and p-type field-effect transistors fabricated by solution-based chemical doping. Complementary metal-oxide-semiconductor inverters exhibited voltage gains of up to 20, which illustrates the great potential of carbon nanotube networks for printable flexible electronics.Comment: 12 PAGES, 3 FIGURE

Observable non-gaussianity from gauge field production in slow roll inflation, and a challenging connection with magnetogenesis

In any realistic particle physics model of inflation, the inflaton can be expected to couple to other fields. We consider a model with a dilaton-like coupling between a U(1) gauge field and a scalar inflaton. We show that this coupling can result in observable non-gaussianity, even in the conventional regime where inflation is supported by a single scalar slowly rolling on a smooth potential: the time dependent inflaton condensate leads to amplification of the large-scale gauge field fluctuations, which can feed-back into the scalar/tensor cosmological perturbations. In the squeezed limit, the resulting bispectrum is close to the local one, but it shows a sizable and characteristic quadrupolar dependence on the angle between the shorter and the larger modes in the correlation. Observable non-gaussianity is obtained in a regime where perturbation theory is under control. If the gauge field is identified with the electromagnetic field, the model that we study is a realization of the magnetogenesis idea originally proposed by Ratra, and widely studied. This identification (which is not necessary for the non-gaussianity production) is however problematic in light of a strong coupling problem already noted in the literature.Comment: 28 pages, no figures. Final versio

Modulation of spin-torque ferromagnetic resonance with a nanometer-thick platinum by ionic gating

The spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin–orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin–orbit torque in Pt/Ni₈₀Fe₂₀ (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin–orbit interaction in Pt

Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating

Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and Pt plays the dominant role in the modulation. This finding can facilitate investigations of gate-tunable, spin-related effects and fabrication of spin devices.Comment: 10 pages, 3 figures (To appear in Applied Physics Express

Anomalous sign inversion of spin-orbit torque in ferromagnetic/nonmagnetic bilayer systems due to self-induced spin-orbit torque

Self-induced spin-orbit torques (SI-SOTs) in ferromagnetic (FM) layers have been overlooked when estimating the spin Hall angle (SHA) of adjacent nonmagnetic (NM) layers. In this work, we observe anomalous sign inversion of the total SOT in the spin-torque ferromagnetic resonance due to the enhanced SI-SOT, and successfully rationalize the sign inversion through a theoretical calculation considering the SHE in both the NM and FM layers. The findings show that using an FM layer whose SHA sign is the same as that of the NM achieves efficient SOT-magnetization switching with the assistance of the SI-SOT. The contribution of the SI-SOT becomes salient for a weakly conductive NM layer, and conventional analyses that do not consider the SI-SOT can overestimate the SHA of the NM layer by a factor of more than 150.Comment: 9 pages, 4 figure