Efficiently Harvesting Sun Light for Silicon Solar Cells through Advanced Optical Couplers and A Radial p-n Junction Structure

Silicon-based solar cells (SCs) promise to be an alternative energy source mainly due to: (1) a high efficiency-to-cost ratio, (2) the absence of environmental-degradation issues, and (3) great reliability. Transition from wafer-based to thin-film SC significantly reduces the cost of SCs, including the cost from the material itself and the fabrication process. However, as the thickness of the absorption (or the active) layer decreases, the energy-conversion efficiency drops dramatically. As a consequence, we discuss here three techniques to increase the efficiency of silicon-based SCs: (1) photonic crystal (PC) optical couplers and (2) plasmonic optical couplers to increase efficiency of light absorption in the SCs, and (3) a radial p-n junction structure, decomposing light absorption and diffusion path into two orthogonal directions. The detailed mechanisms and recent research progress regarding these techniques are discussed in this review article

Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS

Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT and the radiation-induced charge density is nearly six times larger than that of standard metal–oxide–nitride–oxide–silicon MONOS devices. The decrease of VT for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal–oxide–hafnium oxide–oxide–silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future

Review Efficiently Harvesting Sun Light for Silicon Solar Cells through Advanced Optical Couplers and A Radial p-n Junction Structure

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Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device

The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT. The change of VT for Si-MONOS after gamma irradiation has a strong correlation to the TID of gamma ray exposure as well. The Si-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile TID radiation sensing in the future