Sensory and nutritional evaluation of nine types of millet substituted for polished white rice in select Indian meal preparations

This study was conducted to test the suitability of using nine types of millets namely finger millet, pearl millet, white and yellow sorghum, little millet, barnyard millet, proso millet, kodo millet, and browntop millet in seven popular Indian meal preparations based on sensory characteristics and nutrient value. The popular Indian meal preparations tested were boiled grain, dosa, idli, bisi belle bath, pulao, puttu, and pongal. In total, 53 variations in meal preparations were developed using the millets and seven polished white rice-based meal preparations were developed as control. The main findings indicated that meal preparation crafted from various millets garnered overall sensory scores closely resembling to those derived from polished white rice. Notably, little millet exhibited high scores in pongal and dosa, and achieved elevated overall sensory scores compared to meal preparation from polished white rice. Bisi belle bath made of barnyard millet scored higher in overall sensory score than polished white rice. Moreover, there was significant association between some types of millets’ overall sensory characteristics (p < 0.005) with polished white rice-based meal preparations. In terms of nutrient value, all the millet-based meal preparations had significantly high nutritional value compared to those made with polished white rice (p < 0.05). Especially calcium content of the meal prepared with finger millet was significantly higher compared to polished white rice-based meals (p < 0.05). Puttu, idli, and dosa prepared with finger millet had calcium content of 59.4, 10.8, and 70.9 mg/100 g compared to those prepared with the polished white rice which had only 1.3, 6.3, and 9.2 mg/100 g. The magnesium content of all millet-based meal preparations was generally several-folds higher compared to the polished white rice-based meal preparations (p < 0.05). There is a significant difference in the fiber content of the meals prepared with millets compared to the meals prepared with polished white rice (p < 0.05). This study was conducted using millets that are locally available and does not represent all the millet varieties available globally, as each type of millet has a wide range of varieties. Therefore, it is important to understand and choose the type and variety of millet while enhancing the nutritional value of diets

Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique.

The capacitance-voltage (C-V) characteristics of thin films of ZrO2 deposited by thermal metal-organic chemical vapour deposition (MOCVD) have been analyzed. The films were grown at three different temperatures (500, 550 and 600 ºC) and 1 mbar pressure from a novel monomeric zirconium amide-guanidinate complex [Zr(NEtMe)2(guanidinate)2]. The true capacitance was determined from measurements made at different frequencies in order to account for the series and shunt parasitic resistances during C-V measurements. Films grown at 500 and 550 ºC showed no hysteresis while those grown at 600 ºC exhibited a very small hysteresis window 0.16 V for O2 flow of 100 sccm and 0.19 V for 50 sccm O2 flow. A very small voltage shift is also obtained for the device under 10 hr voltage stress. These preliminary in-depth electrical results suggest that quality ZrO2 can be grown from the novel [Zr(NEtMe)2(guanidinate)2] complex precursor paving the way for their use as future gate dielectrics

Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition.

Thin films of HfGdOx and HfDyOx were deposited by metalorganic chemical vapor deposition (MOCVD) utilizing guanidinate precursors for Hf, Gd and Dy. The close match in the thermal properties of the precursors enabled the MOCVD of rare-earth (RE) substituted HfO2 over a wide temperature window. Film deposition was carried out in the temperature range 300–700 °C in the presence of oxygen on Si(100) substrates. HfGdOx films were analyzed in detail for their structure, composition and morphology using X-ray diffraction, Rutherford backscattering spectrometry, proton induced X-ray emission, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical properties of HfGdOx in terms of capacitance–voltage and current–voltage characteristics of metal-insulator-semiconductor device structures were evaluated

Rare-Earth based Oxide and Nitride thin films employing volatile homoleptic guanidinate precursors.

The application of the metalorganic compound tris(N,N'-diisopropyl-2-dimethlyamidoguanidinato)gadolinium(III) (1) as a precursor for MOCVD of Gd2O3 is discussed. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300 - 700{degree sign}C. Employing a multi-technique approach (XRD, SEM, AFM, EDX, RBS, SNMS, SE, C-V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, optical and electrical properties. In addition, the use of 1 as single source precursor for the MOCVD of GdN thin films is also demonstrated

Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.

The application of two novel metalorganic complexes, namely the isostructural tris(N,N'diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N'-diisopropyl-2-dimethlyamido-guanidinato)dysprosium(III) (2) as precursors for metalorganic chemical vapor deposition (MOCVD) of Gd 2O3 and Dy2O3 is discussed. On the basis of the detailed thermal gravimetric analysis (TGA) and isothermal TGA studies, both the precursors are very volatile and able to deliver continuous mass transport into the gas phase. The extraordinary thermal stability of the precursors was revealed by nulcear magnetic resonance (NMR) decomposition studies. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300-700 °C. Uniform films with reproducible quality were deposited on Si(100) and Al 2O3(000l) substrates over the entire temperature range. Employing a multitechnique approach (XRD, SEM, AFM, EDX, XPS, RBS, SNMS, C- V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, and electrical properties

Diversity in HIV epidemic transitions in India: An application of HIV epidemiological metrices and benchmarks.

BackgroundThe Joint United Nations Programme on AIDS (UNAIDS) has emphasized on the incidence-prevalence ratio (IPR) and incidence-mortality ratio (IMR) to measure the progress in HIV epidemic control. In this paper, we describe the status of epidemic control in India and in various states in terms of UNAIDS's recommended metrices.MethodThe National AIDS Control Programme (NACP) of India spearheads work on mathematical modelling to estimate HIV burden based on periodically conducted sentinel surveillance for providing guidance to program implementation and policymaking. Using the results of the latest round of HIV Estimations in 2019, IPR and IMR were calculated.ResultsNational level IPR was 0.029 [0.022-0.037] in 2019 and ranged from 0.01 to 0.15 in various States and Union Territories (UTs). Corresponding Incidence-Mortality Ratio was at 0.881 [0.754-1.014] nationally and ranged between 0.20 and 12.90 across the States/UTs.ConclusionsBased on UNAIDS recommended indicators for HIV epidemic control, namely IPR and IMR; national AIDS response in India appears on track. However, the program success is not uniform and significant heterogeneity as well as expanding epidemic was observed at the level of States or UTs. Reinforcing States/UTs specific and focused HIV prevention, testing and treatment initiatives may help in the attainment of 2030 Sustainable Development Goals of ending AIDS as a public health threat by 2030