Dark states in the magnetotransport through triple quantum dots

We consider the transport through a system of three coupled quantum dots in a perpendicular magnetic field. At zero field, destructive interference can trap an electron in a dark state -- a coherent superposition of dot states that completely blocks current flow. The magnetic field can disrupt this interference giving rise to oscillations in the current and its higher-order statistics as the field is increased. These oscillations have a period of either the flux-quantum or half the flux-quantum, depending on the dot geometry. We give results for the stationary current and for the shotnoise and skewness at zero and finite frequency.Comment: 7 pages, 7 figure

Influence of e-e scattering on the temperature dependence of the resistance of a classical ballistic point contact in a two-dimensional electron system

We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly linear below 2 K and tends to saturate at higher T. Perpendicular magnetic fields on the order of a few 10 mT suppress the T-dependent contribution dR. This effect is more pronounced at lower temperatures, causing a crossover to a nearly parabolic T dependence in a magnetic field. The normalized magnetic field dependencies dR(B) permit an empiric single parameter scaling in a wide range of PC gate voltages. These observations give strong evidence for the influence of electron-electron (e-e) scattering on the resistance of ballistic PCs. Our results are in qualitative agreement with a recent theory of the e-e scattering based T dependence of the conductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) and Phys. Rev. B 81 125316 (2010)].Comment: as publishe

Calculations of spin induced transport in ferromagnets

Based on first-principles density functional calculations, a general approach for determining and analyzing the degree of spin polarization (P) in ferromagnets is presented. The approach employs the so-called tetrahedron method to evaluate the Fermi surface integrations of P in both ballistic and diffusive regimes. The validity of the method is examined by comparing the calculated P values for Fe and Ni with the experiment. The method is shown to yield highly accurate results with minimal computational effort. Within our approach, it is also possible to systematically analyze the contributions of various types of electronic states to the spin induced transport. As a case study, the transport properties of the soft-ferromagnet CeMnNi4 are investigated in order to explain the origin of the existing difference between the experimental and theoretical values of P in this intermetallic compound.Comment: 6 pages, 4 figures; to appear in Physical Review B 75 (2007

Tunneling of Bloch electrons through vacuum barrier

Tunneling of Bloch electrons through a vacuum barrier introduces new physical effects in comparison with the textbook case of free (plane wave) electrons. For the latter, the exponential decay rate in the vacuum is minimal for electrons with the parallel component of momentum ${\bf k}_\parallel=0$, and the prefactor is defined by the electron momentum component in the normal to the surface direction. However, the decay rate of Bloch electrons may be minimal at an arbitrary ${\bf k}_\parallel$ (``hot spots''), and the prefactor is determined by the electron's group velocity, rather than by its quasimomentum.Comment: 4 pages, no fig

Zero-bias anomalies in electrochemically fabricated nanojunctions

A streamlined technique for the electrochemical fabrication of metal nanojunctions (MNJs) between lithographically defined electrodes is presented. The first low-temperature transport measurements in such structures reveal suppression of the conductance near zero-bias. The size of the zero-bias anomaly (ZBA) depends strongly on the fabrication electrochemistry and the dimensions of the resulting MNJ. We present evidence that the nonperturbative ZBA in atomic-scale junctions is due to a density of states suppression in the leads.Comment: 4 pages, 4 figure

Anomalous Aharonov-Bohm conductance oscillations from topological insulator surface states

We study transport properties of a topological insulator nanowire when a magnetic field is applied along its length. We predict that with strong surface disorder, a characteristic signature of the band topology is revealed in Aharonov Bohm (AB) oscillations of the conductance. These oscillations have a component with anomalous period $\Phi_0=hc/e$, and with conductance maxima at odd multiples of $\frac12\Phi_0$, i.e. when the AB phase for surface electrons is $\pi$. This is intimately connected to the band topology and a surface curvature induced Berry phase, special to topological insulator surfaces. We discuss similarities and differences from recent experiments on Bi$_2$Se$_3$ nanoribbons, and optimal conditions for observing this effect.Comment: 7 pages, 2 figure

Nonlinear magnetoconductance of a classical ballistic system

We study nonlinear transport through a classical ballistic system accounting for the Coulomb interaction between electrons. The joint effect of the applied bias $V$ and magnetic field $H$ on the electron trajectories results in a component of the non-linear current $I(V,H)$ which lacks the $H\to -H$ symmetry: $\delta I=\alpha_{cl} V^2 H$. At zero temperature the magnitude of $\alpha_{cl}$ is of the same order as that arising from the quantum interference mechanism. At higher temperatures the classical mechanism is expected to dominate due to its relatively weak temperature dependence.Comment: 5 pages, 1 figur

Dynamical mean field theory for strongly correlated inhomogeneous multilayered nanostructures

Dynamical mean field theory is employed to calculate the properties of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers coupled via barrier planes that are made from a strongly correlated material (and can be tuned through the metal-insulator Mott transition). We find that the Friedel oscillations in the metallic leads are immediately frozen in and don't change as the thickness of the barrier increases from one to eighty planes. We also identify a generalization of the Thouless energy that describes the crossover from tunneling to incoherent Ohmic transport in the insulating barrier. We qualitatively compare the results of these self-consistent many-body calculations with the assumptions of non-self-consistent Landauer-based approaches to shed light on when such approaches are likely to yield good results for the transport.Comment: 15 pages, 12 figures, submitted to Phys. Rev.

Interaction of a CO molecule with a Pt monatomic wire: electronic structure and ballistic conductance

We carry out a first-principles density functional study of the interaction between a monatomic Pt wire and a CO molecule, comparing the energy of different adsorption configurations (bridge, on top, substitutional, and tilted bridge) and discussing the effects of spin-orbit (SO) coupling on the electronic structure and on the ballistic conductance of two of these systems (bridge and substitutional). We find that, when the wire is unstrained, the bridge configuration is energetically favored, while the substitutional geometry becomes possible only after the breaking of the Pt-Pt bond next to CO. The interaction can be described by a donation/back-donation process similar to that occurring when CO adsorbs on transition-metal surfaces, a picture which remains valid also in presence of SO coupling. The ballistic conductance of the (tipless) nanowire is not much reduced by the adsorption of the molecule on the bridge and on-top sites, but shows a significant drop in the substitutional case. The differences in the electronic structure due to the SO coupling influence the transmission only at energies far away from the Fermi level so that fully- and scalar-relativistic conductances do not differ significantly.Comment: 12 pages, 12 figures; figure misplacement and minor syntax issues fixed, some references updated and correcte

Spin-polarized electron transport in ferromagnet/semiconductor heterostructures: Unification of ballistic and diffusive transport

A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. A key element of the unified description of transport inside a (nondegenerate) semiconductor is the thermoballistic current consisting of electrons which move ballistically in the electric field arising from internal and external electrostatic potentials, and which are thermalized at randomly distributed equilibration points. The ballistic component in the unified description gives rise to discontinuities in the chemical potential at the boundaries of the semiconductor, which are related to the Sharvin interface conductance. By allowing spin relaxation to occur during the ballistic motion between the equilibration points, a thermoballistic spin-polarized current and density are constructed in terms of a spin transport function. An integral equation for this function is derived for arbitrary values of the momentum and spin relaxation lengths. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the standard spin drift-diffusion equation. The spin polarization in ferromagnet/semiconductor heterostructures is obtained by invoking continuity of the current spin polarization and matching the spin-resolved chemical potentials on the ferromagnet sides of the interfaces. Allowance is made for spin-selective interface resistances. Examples are considered which illustrate the effects of transport mechanism and electric field.Comment: 23 pages, 8 figures, REVTEX 4; minor corrections introduced; to appear in Phys. Rev.