Multiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions

The metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in amplitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump amplitudes, demonstrating an inherent property of the $VO_2$ films. We report a surprising relation between jump amplitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.Comment: 4 papers and 4 figures submitted to PR

Temperature-dependence of the chirality-induced spin selectivity effect -- experiments and theory

The temperature dependence of the chirality-induced spin selectivity (CISS) effect can be used to discriminate between different theoretical proposals for the mechanism of the CISS effect. Here we briefly review key experimental results and discuss the effect of temperature in different models for the CISS effect. We then focus on the recently suggested spinterface mechanism and describe the different possible effects temperature can have within this model. Finally, we analyze in detail recent experimental results from Qian, et.al., (Nature, 606, 902-908 (2022)) and demonstrate that, opposite to the original interpretation by the authors, these data indicate that the CISS effect increases with decreasing temperature. Finally, we show how the spinterface model can accurately reproduce these experimental results.Comment: Author sequence changed, substantially expanded and version published in the Journal of Chemical Physic

Anomalous proximity effect in gold coated (110) YBa2Cu3O7−δYBa_2Cu_3O_{7-\delta} films: Penetration of the Andreev bound states

Scanning tunneling spectroscopy of (110) $YBa_2Cu_3O_{7-\delta}/Au$ bi-layers reveal a proximity effect markedly different from the conventional one. While proximity-induced mini-gaps rarely appear in the Au layer, the Andreev bound states clearly penetrate into the metal. Zero bias conductance peaks are measured on Au layers thinner than 7 nm with magnitude similar to those detected on the bare superconductor films. The peaks then decay abruptly with Au thickness and disappear above 10 nm. This length is shorter than the normal coherence length and corresponds to the (ballistic) mean free path.Comment: 5 prl format pages, 4 figures, to be published in PR

Control of spin injection by direct current in lateral spin valves

The spin injection and accumulation in metallic lateral spin valves with transparent interfaces is studied using d.c. injection current. Unlike a.c.-based techniques, this allows investigating the effects of the direction and magnitude of the injected current. We find that the spin accumulation is reversed by changing the direction of the injected current, whereas its magnitude does not change. The injection mechanism for both current directions is thus perfectly symmetric, leading to the same spin injection efficiency for both spin types. This result is accounted for by a spin-dependent diffusion model. Joule heating increases considerably the local temperature in the spin valves when high current densities are injected ($\sim$80--105 K for 1--2$\times10^{7}$A cm$^{-2}$), strongly affecting the spin accumulation.Comment: 6 pages, 5 figure