Effect of Mould Size on Compressive Strength of Green Concrete Cubes

This paper is aimed to evaluate the effect of mould size on compressive strength of concrete cubes made with recyclable concrete aggregates. Natural coarse aggregates were replaced with 50% recycled aggregates from old demolished concrete. Five different mould sizes were used to cast 420 concrete cubes using 1:2:4 mix and 0.55 water/cement ratio. In each size equal number of cubes was cured for 3, 7, 14 and 28-day. After curing, weight of cubes was determined followed by testing for compressive strength in universal load testing machine with gradually increasing load. From the obtained results the strength correction coefficients were computed keeping 28-day cured standard size cubes as control specimens. Also, numerical expression based on regression analysis was developed to predict the compressive strength using weight of cube, area of mould and curing age as input parameter. The numerical equation predicts the compressive strength very well with maximum of 10.86% error with respect to experimental results.

Preparation and Numerical Optimization of TiO₂:CdS Thin Films in Double Perovskite Solar Cell

This work focuses on preparing TiO2, CdS, and composite TiO2:CdS thin films for photovoltaic applications by thermal evaporation. The suggested materials exhibit very good optical and electrical properties and can play a significant role in enhancing the efficiency of the device. Various microscopy and spectroscopy techniques were considered to investigate the optical, morphological, photoluminescence, and electrical properties. FTIR confirms the material identification by displaying some peaks in the fingerprint region. UV Vis spectroscopy yields high transmission (80–90%) and low absorbance (5–10%) within the spectral region from 500 nm to 800 nm for the composite thin films. The optical band gap values for CdS, TiO2, and TiO2:CdS thin films are 2.42 eV, 3.72 eV, and 3.6 eV. XRD was utilized to analyze the amorphous nature of the thin films, while optical and SEM microscopy were employed to examine the morphological changes caused by the addition of CdS to TiO2. The decrease in the bandgap of the composite thin films was determined by the Tauc plot, which is endorsed due to the band tailing effects. Photoluminescence spectroscopy depicts several emission peaks in the visible region when they are excited at different wavelengths, and the electrical measurement enhances the material conductivity. Furthermore, the proposed electron transport materials (TiO2, CdS, TiO2:CdS) were simulated with different perovskite materials to validate their design by employing the SCAPS-1D program and assess their performance in commercial implementation. The observed results suggest that TiO2:CdS is a promising candidate to be used as an ETM in PSC with enhanced productivity

A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped AlN thin films by using DC and RF magnetron sputtering for optoelectronic applications. Additionally, a comparative analysis was also carried out on the as-deposited and annealed thin films. Several spectroscopy and microscopy techniques were considered for the characterization of structural (X-ray diffraction), morphological (SEM), chemical bonding (FTIR), and emission (PL spectroscopy) properties. The XRD results show that the thin films have an oriented c-axis hexagonal structure. SEM analysis validated the granular-like morphology of the deposited sample, and FTIR results confirm the presence of chemical bonding in deposited thin films. The photoluminescence (PL) emission spectra exhibit different peaks in the visible region when excited at different wavelengths. A sharp and intense photoluminescence peak was observed at 426 nm in the violet-blue region, which can be attributed to inter-band transitions due to the incorporation of Ni in AlN. Most of the peaks in the PL spectra occurred due to direct-band recombination and indirect impurity-band recombination. After annealing, the intensity of all observed peaks increases drastically due to the development of new phases, resulting in a decrease in defects and a corresponding increase in the crystallinity of the thin film. The observed structural, morphological, and photoluminescence results suggest that Ni: AlN is a promising candidate to be used in optoelectronics applications, specifically in photovoltaic devices and lasers