199 research outputs found
Gate defined quantum dot realized in a single crystalline InSb nanosheet
Single crystalline InSb nanosheet is an emerging planar semiconductor
material with potential applications in electronics, infrared optoelectronics,
spintronics and topological quantum computing. Here we report on realization of
a quantum dot device from a single crystalline InSb nanosheet grown by
molecular-beam epitaxy. The device is fabricated from the nanosheet on a
Si/SiO2 substrate and the quantum dot confinement is achieved by top gate
technique. Transport measurements show a series of Coulomb diamonds,
demonstrating that the quantum dot is well defined and highly tunable. Tunable,
gate-defined, planar InSb quantum dots offer a renewed platform for developing
semiconductor-based quantum computation technology.Comment: 12 pages, 4 figure
Generalizations of the Erd\H{o}s-Kac Theorem and the Prime Number Theorem
In this paper, we study the linear independence between the distribution of
the number of prime factors of integers and that of the largest prime factors
of integers. Respectively, under a restriction on the largest prime factors of
integers, we will refine the Erd\H{o}s-Kac Theorem and Loyd's recent result on
Bergelson and Richter's dynamical generalizations of the Prime Number Theorem.
At the end, we will show that the analogue of these results holds with respect
to the Erd\H{o}s-Pomerance Theorem as well.Comment: 20 pages. Accepted by the Communications in Mathematics and
Statistic
Overexpression of MfPIP2-7 from Medicago falcata promotes cold tolerance and growth under NO3 − deficiency in transgenic tobacco plants
Some remarks on strong multiplicity one for paramodular forms
We establish several refined strong multiplicity one results for paramodular
cusp forms by using the spinor and standard -functions with the combination
of the methods from both of automorphic side and Galois side.Comment: 28 page
Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot
We report on experimental detection of the spin-orbit interaction field in an
InAs nanowire double quantum dot device. In the spin blockade regime, leakage
current through the double quantum dot is measured and is used to extract the
effects of spin-orbit interaction and hyperfine interaction on spin state
mixing. At finite magnetic fields, the leakage current arising from the
hyperfine interaction is suppressed and the spin-orbit interaction dominates
spin state mixing. We observe dependence of the leakage current on the applied
magnetic field direction and determine the direction of the spin-orbit
interaction field. We show that the spin-orbit field lies in a direction
perpendicular to the nanowire axis but with a pronounced off-substrate-plane
angle. It is for the first time that such an off-substrate-plane spin-orbit
field in an InAs nanowire has been detected. The results are expected to have
an important implication in employing InAs nanowires to construct spin-orbit
qubits and topological quantum devices.Comment: 20 pages, 5 figures, Supporting Informatio
Two-dimensional Mott variable-range hopping transport in a disordered MoS nanoflake
The transport characteristics of a disordered MoS nanoflake in the
insulator regime are studied by electrical and magnetotransport measurements.
The layered MoS nanoflake is exfoliated from a bulk MoS crystal and the
conductance and magnetoresistance are measured in a four-probe setup over a
wide range of temperatures. At high temperatures, we observe that
exhibits a temperature dependence and the transport in the nanoflake
dominantly arises from thermal activation. At low temperatures, where the
transport in the nanoflake dominantly takes place via variable-range hopping
(VRH) processes, we observe that exhibits a
temperature dependence, an evidence for the two-dimensional (2D) Mott VRH
transport. The measured low-field magnetoresistance of the nanoflake in the
insulator regime exhibits a quadratic magnetic field dependence with , fully consistent with the 2D Mott VRH transport
in the nanoflake.Comment: 14 pages, 4 figures, and Supplemental Material
An Improved Substation Locating and Sizing Method Based on the Weighted Voronoi Diagram and the Transportation Model
Effect of Amorphization Methods on the Properties and Structures of Potato Starch-Monoglyceride Complex
Recently, starch-based fat replacers (FRs) have emerged as unique ingredients, possessing few calories and high vascular scavenger function without adverse organoleptic changes. Here, a two-step modification method for the development of a starch-based FRs is reported. First, native potato starch is amorphized by grinding, alkali and ethanol treatment. Then, the amorphized starch is complexed with monoglyceride. The results show that alkaline amorphous potato starch (AAPS) has the best emulsifying activity; ethanol amorphous potato starch complex (EAPSC) has the highest content of resistant starch (RS) (21.49%), while grinding amorphous potato starch (GAPS) retains the granular structure of the original starch best. The amorphization reduces the amylose content of starch, leading to reduced swelling power and increased digestibility. Complexation, on the other hand, is more like attaching a layer of the hydrophobic membrane. Combined with DSC and XRD, amorphization reduces the value of enthalpy and crystallinity, while the complexation process does the opposite. Overall, EAPSC is the best candidate for novel FRs, due to its greater emulsion stability and enzyme resistance. The experimental results provide a theoretical basis for the application of a novel potato starch-monoglyceride complex in foods such as cakes and snack fillings
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