Wenzhou TE: a first-principles calculated thermoelectric materials database

Since the implementation of the Materials Genome Project by the Obama administration in the United States, the development of various computational materials databases has fundamentally expanded the choices of industries such as materials and energy. In the field of thermoelectric materials, the thermoelectric figure of merit ZT quantifies the performance of the material. From the viewpoint of calculations for vast materials, the ZT values are not easily obtained due to their computational complexity. Here, we show how to build a database of thermoelectric materials based on first-principles calculations for the electronic and heat transport of materials. Firstly, the initial structures are classified according to the values of bandgap and other basic properties using the clustering algorithm K-means in machine learning, and high-throughput first principles calculations are carried out for narrow-bandgap semiconductors which exhibiting potential thermoelectric application. The present framework of calculations mainly includes deformation potential module, electrical transport performance module, mechanical and thermodynamic properties module. We have also set up a search webpage for the calculated database of thermoelectric materials, providing searching and viewing the related physical properties of materials. Our work may inspire the construction of more computational databases of first-principle thermoelectric materials and accelerate research progress in the field of thermoelectrics.Comment: 13 pages, 5 figure

Thermal conductivity of monolayer MoS2, MoSe2, and WS2: Interplay of mass effect, interatomic bonding and anharmonicity

Phonons are essential for understanding the thermal properties in monolayer transition metal dichalcogenides, which limit their thermal performance for potential applications. We investigate the lattice dynamics and thermodynamic properties of MoS2, MoSe2, and WS2 by first principles calculations. The obtained phonon frequencies and thermal conductivities agree well with the measurements. Our results show that the thermal conductivity of MoS2 is highest among the three materials due to its much lower average atomic mass. We also discuss the competition between mass effect, interatomic bonding and anharmonic vibrations in determining the thermal conductivity of WS2. Strong covalent W-S bonding and low anharmonicity in WS2 are found to be crucial in understanding its much higher thermal conductivity compared to MoSe2.Comment: 19 pages, 7 figure

Possible atomic structures for the sub-bandgap absorption of chalcogen hyperdoped silicon

Single-crystal silicon wafers were hyperdoped respectively by sulfur, selenium, and tellurium element using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements endowed the treated silicon with a strong and wide sub-bandgap light absorptance. When these hyperdoped silicons were thermally annealed even at low temperatures (such as 200~400 oC), however, this extra sub-bandgap absorptance began to attenuate. In order to explain this attenuation of absorptance, alternatively, we consider it corresponding to a chemical decomposition reaction from optically absorbing structure to non-absorbing structure, and obtain a very good fitting to the attenuated absorptances by using Arrhenius equation. Further, we extract the reaction activation energies from the fittings and they are 0.343(+/- 0.031) eV for S-, 0.426(+/-0.042) eV for Se-, and 0.317(+/-0.033) eV for Te-hyperdoped silicon, respectively. We discuss these activation energies in term of the bond energies of chalcogen-Si metastable bonds, and finally suggest that several high-energy interstitial sites instead of the substitutional site, are very possibly the atomic structures that are responsible for the sub-bandgap absorptance of chalcogen hyperdoped silicon.Comment: 18 pages, 3 figures, 1 tabl