Optoelectronic insights into the photovoltaic losses from photocurrent, voltage, and energy perspectives

Photocurrent and voltage losses are the fundamental limitations for improving the efficiency of photovoltaic devices. It is indeed that a comprehensive and quantitative differentiation of the performance degradation in solar cells will promote the understanding of photovoltaic physics as well as provide a useful guidance to design highly-efficient and cost-effective solar cells. Based on optoelectronic simulation that addresses electromagnetic and carrier-transport responses in a coupled finite-element method, we report a detailed quantitative analysis of photocurrent and voltage losses in solar cells. We not only concentrate on the wavelength-dependent photocurrent loss, but also quantify the variations of photocurrent and operating voltage under different forward electrical biases. Further, the device output power and power losses due to carrier recombination, thermalization, Joule heat, and Peltier heat are studied through the optoelectronic simulation. The deep insight into the gains and losses of the photocurrent, voltage, and energy will contribute to the accurate clarifications of the performance degradation of photovoltaic devices, enabling a better control of the photovoltaic behaviors for high performance

Design of dual-diameter nanoholes for efficient solar-light harvesting

A dual-diameter nanohole (DNH) photovoltaic system is proposed, where a top (bottom) layer with large (small) nanoholes is used to improve the absorption for the short-wavelength (long-wavelength) solar incidence, leading to a broadband light absorption enhancement. Through three-dimensional finite-element simulation, the core device parameters, including the lattice constant, nanohole diameters, and nanohole depths, are engineered in order to realize the best light-matter coupling between nanostructured silicon and solar spectrum. The designed bare DNH system exhibits an outstanding absorption capability with a photocurrent density (under perfect internal quantum process) predicted to be 27.93 mA/cm(2), which is 17.39%, 26.17%, and over 100% higher than the best single-nanohole (SNH) system, SNH system with an identical Si volume, and equivalent planar configuration, respectively. Considering the fabrication feasibility, a modified DNH system with an anti-reflection coating and back silver reflector is examined by simulating both optical absorption and carrier transport in a coupled way in frequency and three-dimensional spatial domains, achieving a light-conversion efficiency of 13.72%. PACS: 85.60.-q; Optoelectronic device; 84.60.Jt; Photovoltaic conversio

In Situ Synchrotron HEXRD Study on the Deformation Mechanism of a Nickel-Based Superalloy during Medium-Temperature Compression

The γ′ phase has an important influence on the deformation mechanism of solid-solution strengthening nickel-based superalloys. The microfracture behavior of the alloy depends on the mechanism of stress and strain partitioning between the γ and γ′ phase under load. In this study, the in situ synchrotron radiation high-energy X-ray diffraction technique was used to observe the deformation process of the FGH96 nickel-based superalloy with a γ′ volume fraction of about 40% at 650 °C and 750 °C. The results show that the (111) reflection had the greatest stiffness and showed plastic deformation first; while the (200) reflection bore a larger load. The γ phase yielded first and began to deform plastically; then the load was transferred to the γ′ phase. At 650 °C, the plastic deformation of the γ′ phase was relatively higher; while at 750 °C, the γ′ particle basically maintained elastic deformation with a tiny amount of plastic deformation

Broadband and wide-angle light harvesting by ultra-thin silicon solar cells with partially embedded dielectric spheres

We propose a design of crystalline silicon thin-film solar cells (c-Si TFSCs, 2 mu m-thick) configured with partially embedded dielectric spheres on the light-injecting side. The intrinsic light trapping and photoconversion are simulated by the complete optoelectronic simulation. It shows that the embedding depth of the spheres provides an effective way to modulate and significantly enhance the optical absorption. Compared to the conventional planar and front sphere systems, the optimized partially embedded sphere design enables a broadband, wide-angle, and strong optical absorption and efficient carrier transportation. Optoelectronic simulation predicts that a 2 mu m-thick c-Si TFSC with half-embedded spheres shows an increment of more than 10 mA/cm(2) in short-circuit current density and an enhancement ratio of more than 56% in light-conversion efficiency, compared to the conventional planar counterparts. (C) 2016 Optical Society of Americ