The Ferris ferromagnetic resonance technique: principles and applications

Measurements of ferromagnetic resonance (FMR) are pivotal to modern magnetism and spintronics. Recently, we reported on the Ferris FMR technique, which relies on large-amplitude modulation of the externally applied magnetic field. It was shown to benefit from high sensitivity while being broadband. The Ferris FMR also expanded the resonance linewidth such that the sensitivity to spin currents was enhanced as well. Eventually, the spin Hall angle ({\theta}_SH) was measurable even in wafer-level measurements that require low current densities to reduce the Joule heating. Despite the various advantages, analysis of the Ferris FMR response is limited to numerical modeling where the linewidth depends on multiple factors such as the field modulation profile and the magnetization saturation. Here, we describe in detail the basic principles of operation of the Ferris FMR and discuss its applicability and engineering considerations. We demonstrated these principles in a measurement of the orbital Hall effect taking place in Cu, using an Au layer as the orbital to spin current converter. This illustrates the potential of the Ferris FMR for the future development of spintronics technology

Efficient generation of spin currents by the Orbital Hall effect in pure Cu and Al and their measurement by a Ferris-wheel ferromagnetic resonance technique at the wafer level

We present a new ferromagnetic resonance (FMR) method that we term the Ferris FMR. It is wideband, has significantly higher sensitivity as compared to conventional FMR systems, and measures the absorption line rather than its derivative. It is based on large-amplitude modulation of the externally applied magnetic field that effectively magnifies signatures of the spin-transfer torque making its measurement possible even at the wafer-level. Using the Ferris FMR, we report on the generation of spin currents from the orbital Hall effect taking place in pure Cu and Al. To this end, we use the spin-orbit coupling of a thin Pt layer introduced at the interface that converts the orbital current to a measurable spin current. While Cu reveals a large effective spin Hall angle exceeding that of Pt, Al possesses an orbital Hall effect of opposite polarity in agreement with the theoretical predictions. Our results demonstrate additional spin- and orbit- functionality for two important metals in the semiconductor industry beyond their primary use as interconnects with all the advantages in power, scaling, and cost