Relationship between social media marketing practices and customer response with mediating role of brand equity dimensions: an empirical investigation

This study aims to investigate the relationship between social media marketing practices and customer response with consideration of the mediating role of brand equity dimensions through structural equation modeling in an empirical case study. Data are analyzed using structural equation modeling. The following findings are found: The results show that there is a significant relationship between social media marketing practices and customer response in the survey sample. Additionally, the hypothesis about the mediating role of brand equity dimensions is also supported. The results of our research augment our understanding of the role of social media marketing practices in stimulating customer response (electronic word-of-mouth and commitment) and the role of brand equity dimensions (brand awareness and brand image)

The Effect of Corporate Social Responsibility on Brand Performance with the Mediating Role of Corporate Reputation, Resource Commitment and Green Creativity

Following the strategic decisions of business managers in the community, issues have been raised that lead to changes in the community. One of these issues, which is becoming increasingly important, is consideration of corporate social responsibility. Therefore, the focus of this study was the effect of corporate social responsibility on brand performance with the mediating role of corporate reputation, resource commitment and green creativity. The research method was survey. The statistical population was employees of private banks, 507 of whom participated in the study. Structural equation modelling with SMARTPLS software was used to analyse the data. The results showed the effect of corporate social responsibility is positive and significant on resource commitment, green creativity, corporate reputation and brand performance. The effect of resource commitment, green creativity and corporate reputation is positive and significant on brand performance. Brand performance will be improved if the company supports employee higher education, encourages employees to develop their skills and abilities, implements flexible policies to provide work-life balance for employees, prioritizes employee needs and demands, has plans to reduce the negative effects of the company on the environment, and participates in activities aimed at protecting and improving the quality of the environment

Investigation on the Stabilizing Effect of Titanium in HfO2-Based Resistive Switching Devices With Tungsten Electrode

Resistive switching (RS) devices, also referred to as resistive random access memories (ReRAMs), rely on a working principle based on the change of electrical resistance following proper external electrical stimuli. Since the demonstration of the first resistive memory based on a binary transition metal oxide (TMO) enclosed in a metal–insulator–metal (MIM) structure, this class of devices has been considered a key player for simple and low-cost memories. However, successful large-scale integration with standard complementary metal–oxide–semiconductor (CMOS) technologies still needs systematic investigations. In this work, we examine the beneficial effect titanium has when employed as a buffer layer between CMOS-compatible materials like hafnium dioxide and tungsten. Hindering the tungsten oxidation, Ti provides RS stabilization and allows getting faster responses from the devices. Through an extensive comparative study, the effect of both thickness and composition of Ti-based buffer layers is investigated. The reported results show how titanium can be effectively employed to stabilize and tailor the RS behavior of the devices, and they may open the way to the definition of new design rules for ReRAM–CMOS integration. Moreover, the gradual switching and the response speed tunability observed employing titanium might also extend the domain of interest of these results to brain-inspired computing applications

Capillary particle assembly (CAPA) for plasmonic devices

Signicant progress has been made to synthesis colloidal particles capable of controlling shape , dimensions and structures. These nanoparticles placement and integration on sur- faces is the main challenges of engineering approaches. Here, we investigate the comple- mentary methods to assemble nanoparticles in two and three dimensional substrate with dierent shape, size and orientation.using hydrophobic substrate to trap and organise par- ticles inside the trenches by capillary forces. we demonstrate that temperature, wetting properties and substrate geometry can be control to achieve high yield assembly with abil- ity to control the arbitrary orientation of particles(nano rods). substrate temperature factor can induce the local phase transition which conne the nanoparticles at three phase contact line required for high yield assembly. wetting properties were determined by silanization of substrate and adjusting surfactant con- centration.Sodium dodecylbenzenesulfonate( SDBS) and cetyltrimethyl ammonium bromide (CTAB) surfactant critical micelle concentration were measured and tuned respectively to stabilise nanospheres and nano rods colloidal solu- tion. substrate template were modied for nano rods to achieve accurate angle orientation by etching assessment and design fabrication (funnel prole with HSQ wall). etching pa- rameters were modied to get accurate nanoscale prole with respect to the design for both silicon and silicon oxide substrate. Eect of substrate orientation and size on the assembly yield were characterised. substrate geometry eect on angular distribution were measured as well.high yield and accurate connement were achieved on the funnel prole templates.the feasibility and reproducibility of this method is demonstrated by assembling nano particles into large area, non close packed arrays. furthermore nanoparticles that are deterministically assembled have the potential to function as nano-plasmonic antennas de- vices. micro uidic chip were fabricated to use in the assembly site to overcome volume limitation in the assembly

High-yield and high-precision nanoparticle assembly: towards complex plasmonic antennas

We present a high-confinement approach to capillarity-assisted particle assembly (CAPA) enabling both high-precision and high-yield assembly of single nanoparticles and of multi-particle clusters into silicon and glass substrates.info:eu-repo/semantics/publishe

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, time and cost effective integration technique and at the same time provide device stability with CMOS-compatible materials that are used in the relevant device applications. In this study, we demonstrate a technique for the nm-scale hybrid integration of ReRAM on the foundry-produced CMOS 180 nm technology chip. Tungsten (W), as a material of choice for vertical vias in CMOS circuitry, is employed as the ReRAM electrode. However, W oxidizes readily, having multiple oxidation states, which influences the device reliability. In particular, the generation of semi-stable oxides at the electrode/switching layer (W/HfO2) interface has a profound influence on device performance. To achieve reliable W-based integrated ReRAM, we modulated and controlled the W electrode oxidation within the different co-integrated ReRAM stacks by increasing HfO2 switching layer thickness, through the post-metallization annealing under O-2-ambient, and by adding an Al2O3 barrier layer between the W and HfO2 layers. The effect of W interface modifications is further studied through the analysis of switching mechanism and TEM micro-structural characterization. A notable improvement in HRS/LRS resistance ratio and switching stability was observed in optimally fabricated (W/Al2O3/HfO2/TiN) ReRAM on the back end of the line (BEoL) of 180 nm CMOS chip

The key impact of incorporated Al2O3barrier layer on W-based ReRAM switching performance

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabilizes the resistance states and lowers the operating current. Al2O3 acts as an oxygen scavenging blocking layer at W sides, results in the filament path constriction at the Al2O3/HfO2 interface. This leads to the more controllable reset operation and consecutively the HRS properties improvement. This allows the W/Al2O3/HfO2/Pt to switch at 10 times lower operating current of 100 μA and 2 times higher memory window compared to the W/HfO2/Pt stacks. The LRS conduction of devices with the barrier layer is in perfect agreement with the Poole-Frenkel model

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. In this work, we fabricated several HfOx ReRAM devices with different structure, material, and thickness, followed by a study of their electrical characteristics under DC biasing. We show an improvement in the switching parameters through engineering of the device structure. Moreover, we demonstrate a certain required thickness for the oxide layer for the ease of oxygen vacancies relocations, thinner oxide layer led to the common ReRAMs performance failure in the low resistance state

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabilizes the resistance states and lowers the operating current. Al2O3 acts as an oxygen scavenging blocking layer at W sides, results in the filament path constriction at the Al2O3/HfO2 interface. This leads to the more controllable reset operation and consecutively the HRS properties improvement. This allows the W/Al2O3/HfO2/Pt to switch at 10 times lower operating current of 100 mu A and 2 times higher memory window compared to the W/HfO2/Pt stacks. The LRS conduction of devices with the barrier layer is in perfect agreement with the Poole-Frenkel model

Titanium-based buffer layers for BEoL-compatible resistive memories

Resistive switching (RS) devices are considered key players for next generation memories. Especially, their compatibility with back-end of line (BEoL) processes makes such devices good candidates for integration in complementary Metal-Oxide-Semiconductor (CMOS) technology. However, systematic investigations providing new design rules are still needed before achieving large-scale embedded application. This project deals with RS memories employing different Ti-based buffer layers and a typical BEoL-compatible metal like tungsten. In order to investigate the impact titanium has on the electrical performances, both DC and pulsed operation regimes are tested. A statistical analysis is carried out on a set of devices for each buffer layer (referred to as NoBuffer, mixBuffer, Buffer1, Buffer3 and Buffer5)