Crossover from quantum to Boltzmann transport in graphene

We compare a fully quantum mechanical numerical calculation of the conductivity of graphene to the semiclassical Boltzmann theory. Considering a disorder potential that is smooth on the scale of the lattice spacing, we find quantitative agreement between the two approaches away from the Dirac point. At the Dirac point the two theories are incompatible at weak disorder, although they may be compatible for strong disorder. Our numerical calculations provide a quantitative description of the full crossover between the quantum and semiclassical graphene transport regimes.Comment: 4 pages, 4 figures; published versio

Gate-tunable coherent perfect absorption of terahertz radiation in graphene

Perfect absorption of radiation in a graphene sheet may play a pivotal role in the realization of technologically relevant optoelectronic devices. In particular, perfect absorption of radiation in the terahertz (THz) spectral range would tremendously boost the utility of graphene in this difficult range of photon energies, which still lacks cheap and robust devices operating at room temperature. In this work we show that unpatterned graphene flakes deposited on appropriate substrates can display gate-tunable coherent perfect absorption (CPA) in the THz spectral range. We present theoretical estimates for the CPA operating frequency as a function of doping, which take into account the presence of common sources of disorder in graphene samples.Comment: To appear in 2D Material

Equivalence of Effective Medium and Random Resistor Network models for disorder-induced unsaturating linear magnetoresistance

A linear unsaturating magnetoresistance at high perpendicular magnetic fields, together with a quadratic positive magnetoresistance at low fields, has been seen in many different experimental materials, ranging from silver chalcogenides and thin films of InSb to topological materials like graphene and Dirac semimetals. In the literature, two very different theoretical approaches have been used to explain this classical magnetoresistance as a consequence of sample disorder. The phenomenological Random Resistor Network model constructs a grid of four-terminal resistors, each with a varying random resistance. The Effective Medium Theory model imagines a smoothly varying disorder potential that causes a continuous variation of the local conductivity. Here, we demonstrate numerically that both models belong to the same universality class and that a restricted class of the Random Resistor Network is actually equivalent to the Effective Medium Theory. Both models are also in good agreement with experiments on a diverse range of materials. Moreover, we show that in both cases, a single parameter, i.e. the ratio of the fluctuations in the carrier density to the average carrier density, completely determines the magnetoresistance profile.Comment: 6 pages, 5 figure