Spin confinement in the superlattices of graphene ribbons

Cataloged from PDF version of article.Based on first-principles calculations, we showed that repeated heterostructures of zigzag graphene nanoribbons of different widths form multiple quantum well structures. Edge states of specific spin directions can be confined in these wells. The electronic and magnetic state of the ribbon can be modulated in real space. In specific geometries, the absence of reflection symmetry causes the magnetic ground state of whole heterostructure to change from antiferromagnetic to ferrimagnetic. These quantum structures of different geometries provide unique features for spintronic applications. (c) 2008 American Institute of Physics

Directed Growth of Hydrogen Lines on Graphene: High Throughput Simulations Powered by Evolutionary Algorithm

We set up an evolutionary algorithm combined with density functional tight-binding (DFTB) calculations to investigate hydrogen adsorption on flat graphene and graphene monolayers curved over substrate steps. During the evolution, candidates for the new generations are created by adsorption of an additional hydrogen atom to the stable configurations of the previous generation, where a mutation mechanism is also incorporated. Afterwards a two-stage selection procedure is employed. Selected candidates act as the parents of the next generation. In curved graphene, the evolution follows a similar path except for a new mechanism, which aligns hydrogen atoms on the line of minimum curvature. The mechanism is due to the increased chemical reactivity of graphene along the minimum radius of curvature line (MRCL) and to sp$^3$ bond angles being commensurate with the kinked geometry of hydrogenated graphene at the substrate edge. As a result, the reaction barrier is reduced considerably along the MRCL, and hydrogenation continues like a mechanical chain reaction. This growth mechanism enables lines of hydrogen atoms along the MRCL, which has the potential to overcome substrate or rippling effects and could make it possible to define edges or nanoribbons without actually cutting the material.Comment: 10 pages of main text, 37 pages of supplementary information, 1 supplementary vide

Size-dependent alternation of magnetoresistive properties in atomic chains

Cataloged from PDF version of article.Spin-polarized electronic and transport properties of carbon atomic chains are investigated when they are capped with magnetic transition-metal (TM) atoms like Cr or Co. The magnetic ground state of the TM-C-n-TM chains alternates between the ferromagnetic (F) and antiferromagnetic (AF) spin configurations as a function of n. In view of the nanoscale spintronic device applications the desirable AF state is obtained for only even-n chains with Cr; conversely only odd-n chains with Co have AF ground states. When connected to appropriate metallic electrodes these atomic chains display a strong spin-valve effect. Analysis of structural, electronic, and magnetic properties of these atomic chains, as well as the indirect exchange coupling of the TM atoms through non-magnetic carbon atoms are presented. (c) 2006 American Institute of Physics

Structural, Vibrational and Electronic Properties of Single Layer Hexagonal Crystals of Groups IV and V

Using first-principles density functional theory calculations, we investigate a family of stable two-dimensional crystals with chemical formula $A_2B_2$, where $A$ and $B$ belong to groups IV and V, respectively ($A$ = C, Si, Ge, Sn, Pb; $B$ = N, P, As, Sb, Bi). Two structural symmetries of hexagonal lattices $P\bar{6}m2$ and $P\bar{3}m1$ are shown to be dynamically stable, named as $\alpha$- and $\beta$-phases correspondingly. Both phases have similar cohesive energies, and the $\alpha$-phase is found to be energetically favorable for structures except CP, CAs, CSb and CBi, for which the $\beta$-phase is favored. The effects of spin-orbit coupling and Hartree-Fock corrections to exchange-correlation are included to elucidate the electronic structures. All structures are semiconductors except CBi and PbN, which have metallic character. SiBi, GeBi and SnBi have direct band gaps, whereas the remaining semiconductor structures have indirect band gaps. All structures have quartic dispersion in their valence bands, some of which make the valence band maximum and resemble a Mexican hat shape. SnAs and PbAs have purely quartic valence band edges, i.e. $E{\sim}{-}\alpha k^4$, a property reported for the first time. The predicted materials are candidates for a variety of applications. Owing to their wide band gaps, CP, SiN, SiP, SiAs, GeN, GeP can find their applications in optoelectronics. The relative band positions qualify a number of the structures as suitable for water splitting, where CN and SiAs are favorable at all pH values. Structures with quartic band edges are expected to be efficient for thermoelectric applications

Graphene: Piecing it together

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.Comment: Advanced Materials (2011

Oscillatory exchange coupling in magnetic molecules

Recently, first-principles calculations based on the spin-dependent density functional theory (DFT) have revealed that the magnetic ground state of a finite linear carbon chain capped by two transition metal (TM) atoms alternates between ferromagnetic and antiferromagnetic configurations depending on the number of carbon atoms. The character of indirect exchange coupling in this nanoscale, quasi-zero-dimensional system is different from those analogous extended structures consisting of magnetic layers separated by a non-magnetic spacer (or magnetic impurities in a non-magnetic host material) and a formulation based on an atomic picture is needed. We present a tight-binding model which provides a theoretical framework to the underlying mechanism of the exchange coupling in molecular structures. The model calculations are capable of reproducing the essential features of the DFT results for the indirect exchange coupling and the atomic magnetic moments in the TM-Cn-TM structures as functions of the number of carbon atoms. In nanostructures consisting of a few atoms the concepts of extended wavefunctions and the band theory lose their validity, and hence the oscillatory exchange coupling turns out to be a consequence of quantum interference effects due to the spin-dependent onsite and hopping energies. © IOP Publishing Ltd

Graphene-based modulation-doped superlattice structures

The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed and consist of periodically arranged alternate layers: InAs/graphene/GaAs/graphene/GaSb. Undoped graphene/GaAs/graphene structure displays relatively high conductance and enhanced mobilities at elevated temperatures unlike modulation-doped superlattice structure more steady and less sensitive to temperature and robust electrical tunable control on the screening length scale. Thermionic current density exhibits enhanced behaviour due to presence of metallic (graphene) mono-layers in superlattice structure. The proposed superlattice structure might become of great use for new types of wide-band energy gap quantum devices.Comment: 5 figure

Study of Thermal Properties of Graphene-Based Structures Using the Force Constant Method

The thermal properties of graphene-based materials are theoretically investigated. The fourth-nearest neighbor force constant method for phonon properties is used in conjunction with both the Landauer ballistic and the non-equilibrium Green's function techniques for transport. Ballistic phonon transport is investigated for different structures including graphene, graphene antidot lattices, and graphene nanoribbons. We demonstrate that this particular methodology is suitable for robust and efficient investigation of phonon transport in graphene-based devices. This methodology is especially useful for investigations of thermoelectric and heat transport applications.Comment: 23 pages, 9 figures, 1 tabl

A transverse current rectification in graphene superlattice

A model for energy spectrum of superlattice on the base of graphene placed on the striped dielectric substrate is proposed. A direct current component which appears in that structure perpendicularly to pulling electric field under the influence of elliptically polarized electromagnetic wave was derived. A transverse current density dependence on pulling field magnitude and on magnitude of component of elliptically polarized wave directed along the axis of a superlattice is analyzed.Comment: 12 pages, 6 figure