Thermal dependence of the zero-bias conductance through a nanostructure

We show that the conductance of a quantum wire side-coupled to a quantum dot, with a gate potential favoring the formation of a dot magnetic moment, is a universal function of the temperature. Universality prevails even if the currents through the dot and the wire interfere. We apply this result to the experimental data of Sato et al.[Phys. Rev. Lett. 95, 066801 (2005)].Comment: 6 pages, 3 figures. More detailed presentation, and updated references. Final version

Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot

A numerical renormalization-group study of the conductance through a quantum wire side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the Kondo-regime temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the flow through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When the fluxes through the two paths are comparable, the conductance is nearly temperature-independent in the Kondo regime, and a Fano antiresonance in the fixed-temperature plot of the conductance as a function of the dot energy signals interference. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping.Comment: 12 pages, with 9 figures. Submitted to PR

Universal zero-bias conductance for the single electron transistor. II: Comparison with numerical results

A numerical renormalization-group survey of the zero-bias electrical conductance through a quantum dot embedded in the conduction path of a nanodevice is reported. The results are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model. A gate potential applied to the conduction electrons is known to change markedly the transport properties of a quantum dot side-coupled to the conduction path; in the embedded geometry here discussed, a similar potential is shown to affect only quantitatively the temperature dependence of the conductance. As expected, in the Kondo regime the numerical results are in excellent agreement with the mapped conductances. In the mixed-valence regime, the mapping describes accurately the low-temperature tail of the conductance. The mapping is shown to provide a unified view of conduction in the single-electron transistor.Comment: Sequel to arXiv:0906.4063. 9 pages with 8 figure

Spin-Polarized STM for a Kondo adatom

We investigate the bias dependence of the tunneling conductance between a spin-polarized (SP) scanning tunneling microscope (STM) tip and the surface conduction states of a normal metal with a Kondo adatom. Quantum interference between tip-host metal and tip-adatom-host metal conduction paths is studied in the full range of the Fano parameter $q$. The spin-polarized STM gives rise to a splitting of the Kondo peak and asymmetry in the zero-bias anomaly depending on the lateral tip-adatom distance. For increasing lateral distances, the Kondo peak-splitting shows a strong suppression and the spin-polarized conductance exhibits the standard Fano-Kondo profile.Comment: new version with improved discussion. added one figure. 12 pages (one-column) + 5 figure

Universal conductance for the Anderson model

We discuss the thermal dependence of the zero-bias electrical conductance for a quantum dot embedded in a quantum wire, or side-coupled to it. In the Kondo regime, the temperature-dependent conductances map linearly onto the conductance for the symmetric Anderson Hamiltonian. The mapping fits accurately numerical renormalization-group results for the conductance in each geometry. In the side-coupled geometry, the conductance is markedly affected by a gate potential applied to the wire; in the embedded geometry, it is not. © 2010 IOP Publishing Ltd