The Analysis of The Researches on Metal-Semiconductor Structures with and without Interfacial Layer in Turkey

Today, there are fairly large number of theoretical and experimental studies on metalsemiconductor structures or Schottky structures which formed by a tight contact of the metal and semiconductor. Having different physical, chemical and electrical properties many materials have been used to produce metal-semiconductor structures with and without interface layer from past to present. The distinctive properties which are not exist at other diodes, open for improvement and widespread use of electronic technology has led scientists to make studies on the metal-semiconductor structures. Considering the scientific studies on metal-semiconductor structures, the examination of the metal-semiconductor and the metalsemiconductor with interfacial layer structures, the observation of its progress over time and the statistical analysis of academic studies in this area in Turkey have been made in this study. The analysis of the academic studies which are scanned in Web of Science database and made in Turkey were performed with data mining by using automated data collection methods and SQL Server Management Studio program. The statistical analysis results show that the academic studies made for every type of MS structure in Turkey increase for almost every year. Considering the academic studies conducted in 2018, the studies on MS and MPS have reached the highest level in all years with 118 and 13 publications. The last five years rate of the number of publications form nearly %45 of all-time publications and the academic studies made for every type of MS structure in Turkey increase for almost every year

The scientific studies on smart grid in selected European countries

Smart grid is a power system consisting of many transmission and distribution systems subjected to an automation which are efficient, reliable and coordinated with each other. As a nature friendly technology, Smart grid come into prominence due to the increasing energy consumption and limited renewable energy sources around the world. In the near future, the use of renewable energy sources is not expected to grow rapidly; but the transmission and distribution systems will be enhanced by Smart grid technologies. Considering these significant benefits, the studies have been increased on Smart grid technologies to meet the energy requirement in each country. Herewith, the aim of this study is to analyse the scientific studies in developed European countries such as Italy, Germany, United Kingdom, France and Spain to find out the increment rate of the importance devoted to the Smart grid technologies in academicals manner. The scientific researches on Smart grid are achieved from the Web of Science database and the statistical analysis have been made by utilizing proper SQL queries in combination with Excel Power Pivot for these countries. The correlation between the scientific studies on smart grid and the virtual smart grid applications are also outlined for each selected country

The scientific studies on smart grid in selected European countries

Smart grid is a power system consisting of many transmission and distribution systems subjected to an automation which are efficient, reliable and coordinated with each other. As a nature friendly technology, Smart grid come into prominence due to the increasing energy consumption and limited renewable energy sources around the world. In the near future, the use of renewable energy sources is not expected to grow rapidly; but the transmission and distribution systems will be enhanced by Smart grid technologies. Considering these significant benefits, the studies have been increased on Smart grid technologies to meet the energy requirement in each country. Herewith, the aim of this study is to analyse the scientific studies in developed European countries such as Italy, Germany, United Kingdom, France and Spain to find out the increment rate of the importance devoted to the Smart grid technologies in academicals manner. The scientific researches on Smart grid are achieved from the Web of Science database and the statistical analysis have been made by utilizing proper SQL queries in combination with Excel Power Pivot for these countries. The correlation between the scientific studies on smart grid and the virtual smart grid applications are also outlined for each selected country

Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer

Taşçıoğlu, İlke (Arel Author)Current-conduction/transport mechanisms (CCMs or CTMs) through barrier and barrier height (BH) formation in the Al/(CdZnO)/p-Si/Al diodes, which were prepared by the sol-gel method, were examined in the range of 110-380 K. The decrease of zero-bias BH (Phi(Bo)) and increase of ideality factor (n) with decreasing temperature were observed. The classic Richardson plot indicated two distinct linear regions that correspond to low and high temperature range (LTR and HTR), respectively. Contrary to this, the acquired Richardson constant value (A*) was much lower than its theoretical value (32 A cm(-2) K-2). Such abnormal behavior of the Phi(Bo), n and A* was attributed to the evidence of the barrier inhomogeneities, especially at low temperature. Therefore, the Phi(Bo-)n, Phi(Bo) and (n(-1) - n) versus q/2kT plots were sketched to acquire significant clues for the Gaussian distribution (GD) of the BHs at rectifier contact area with the mean BH ((Phi) over bar (Bo)) and standard deviation (sigma(so)), which also have two linear parts with distinct slopes. (Phi) over bar and sigma(so) were calculated from the slope and intercept of Phi(Bo) versus q/2kT plot as 0.802 eV and 0.066 V for LTR, 1.043 eV and 0.106 V for HTR, respectively. The (Phi) over bar (Bo) and A* were acquired by utilizing the sigma(so) values and using the Richardson plot as 0.626 eV and 14.26 A cm(-2) K-2 for LTR and 1.021 eV and 32.53 A cm(-2) K-2 for HTR, respectively. Thus, the I-V-T characteristics of the Al/(CdZnO)/p-Si/Al diodes at forward biases were successfully elucidated by the double-GD of BHs with mean BHs of 0.626 eV and 1.021 eV, respectively