A Review of Nanocrystalline Film Thermoelectrics on Lead Chalcogenide Semiconductors: Progress and Application

Submicron-structured films of thermoelectric materials, exhibiting an improved thermoelectric figure of merit, are reviewed, including methods of fabrication and characterization. The review emphasizes the beneficial role of the grain boundaries in polycrystalline films. The enhanced Seebeck coefficient of lead chalcogenide films is attributed to a potential relief that is built along the grain boundaries. It scatters charge carriers with low energy and does not affect carriers with higher energy. The model that accounts for the thermoelectric properties of the films is described and assessed experimentally. The application of a flexible thermoelectric device (module) based on the nanocrystalline film thermoelectric semiconductors as high sensitivity radiation detectors is suggested

Laser Nanostructuring for Diffraction Grating Based Surface Plasmon-Resonance Sensors

The surface plasmon resonance properties of highly regular laser-induced periodic surface structures (HR-LIPSSs) on Si, functionalized with Au nanoparticles (NPs), were investigated. In particular, the spectral dependencies of polarized light reflectance at various angles of incidence were measured and discussed. It is found that the deposition of Au NPs on such periodically textured substrates leads to significant enhancement of the plasmon resonance properties, compared to that measured on planar ones. This effect can be used to improve the efficiency of localized-plasmon-resonance-based sensors

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Abstract The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin–orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers