High-fidelity quantum logic gates using trapped-ion hyperfine qubits

We demonstrate laser-driven two-qubit and single-qubit logic gates with fidelities 99.9(1)% and 99.9934(3)% respectively, significantly above the approximately 99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed/fidelity trade-off for the two-qubit gate, for gate times between 3.8$\mu$s and 520$\mu$s, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.Comment: 1 trap, 2 ions, 3 nines. Detailed write-up of arXiv:1406.5473 including single-qubit gate data als

High-fidelity trapped-ion quantum logic using near-field microwaves

We demonstrate a two-qubit logic gate driven by near-field microwaves in a room-temperature microfabricated ion trap. We measure a gate fidelity of 99.7(1)\%, which is above the minimum threshold required for fault-tolerant quantum computing. The gate is applied directly to $^{43}$Ca$^+$ "atomic clock" qubits (coherence time $T_2^*\approx 50\,\mathrm{s}$) using the microwave magnetic field gradient produced by a trap electrode. We introduce a dynamically-decoupled gate method, which stabilizes the qubits against fluctuating a.c.\ Zeeman shifts and avoids the need to null the microwave field

Probing Qubit Memory Errors at the Part-per-Million Level

Robust qubit memory is essential for quantum computing, both for near-term devices operating without error correction, and for the long-term goal of a fault-tolerant processor. We directly measure the memory error $\epsilon_m$ for a $^{43}$Ca$^+$ trapped-ion qubit in the small-error regime and find $\epsilon_m<10^{-4}$ for storage times t\lesssim50\,\mbox{ms}. This exceeds gate or measurement times by three orders of magnitude. Using randomized benchmarking, at t=1\,\mbox{ms} we measure $\epsilon_m=1.2(7)\times10^{-6}$, around ten times smaller than that extrapolated from the $T_{2}^{\ast}$ time, and limited by instability of the atomic clock reference used to benchmark the qubit.Comment: 8 pages, 5 figure

Study of reorientation processes in L10-ordered FePt thin films

AbstractWe report on the development of structural and magnetic order in epitaxially grown L10 FePt thin films. Upon annealing, the easy axis of magnetization changes from the out-of-plain into the in-plain direction. We found that the overall fraction of reoriented domains first increases but after certain time decreases before achieving a saturated state. The results are based on conversion electron Mössbauer spectroscopy studies and confirm Monte Carlo simulations in nano-layered FePt. We present a modified version of the Johnson–Mehl–Avrami (JMA) model adequately describing the experimental findings. Two dynamical processes, the first being a 2D-growth, dominate the initial state of sample annealing and the second being a 3D-growth, dominate the late stage close to saturation. From an Arrhenius plots of JMA coefficients for both processes we extracted the activation energies of the underlying dynamics which are 1.5(1) eV for disordering and 0.8(2) eV for ordering