A Novel Interposer Channel Structure with Vertical Tabbed Vias to Reduce Far-End Crosstalk for Next-Generation High-Bandwidth Memory

In this paper, we propose and analyze a novel interposer channel structure with vertical tabbed vias to achieve high-speed signaling and low-power consumption in high-bandwidth memory (HBM). An analytical model of the self- and mutual capacitance of the proposed interposer channel is suggested and verified based on a 3D electromagnetic (EM) simulation. We thoroughly analyzed the electrical characteristics of the novel interposer channel considering various design parameters, such as the height and pitch of the vertical tabbed via and the gap of the vertical channel. Based on the frequency-dependent lumped circuit resistance, inductance, and capacitance, we analyzed the channel characteristics of the proposed interposer channel. In terms of impedance, insertion loss, and far-end crosstalk, we analyzed how much the proposed interposer channel improved the signal integrity characteristics compared to a conventional structure consisting of micro-strip and strip lines together. Compared to the conventional worst case, which is the strip line, the eye-width, the eye-height, and eye-jitter of the proposed interposer channel were improved by 17.6%, 29%, and 9.56%, respectively, at 8 Gbps. The proposed interposer channel can reduce dynamic power consumption by about 28% compared with the conventional interposer channel by minimizing the self-capacitance of the off-chip channel

Modeling, Verification, and Signal Integrity Analysis of High-Speed Signaling Channel with Tabbed Routing in High Performance Computing Server Board

It is necessary to reduce the crosstalk noise in high-speed signaling channels. In the channel routing area, the tabbed routing pattern is used to mitigate far-end crosstalk (FEXT), and the electrical length is controlled with a time domain reflectometer (TDR) and time domain transmission (TDT). However, unlike traditional channels having uniform width and space, the width and space of tabbed routing changes by segment, and the capacitance and inductance values of tabbed routing also change. In this paper, we propose a tabbed routing equivalent circuit modeling method using the segmentation approach. The proposed model was verified using 3D EM simulation and measurement results in the frequency domain. Based on the calculated inductance and capacitance parameters, we analyzed the insertion loss, FEXT, and self-impedance in the frequency domain, and TDT and FEXT in the time domain, by comparing the values of these metrics with and without tabbed routing. Using the proposed tabbed routing model, we analyzed tabbed routing with variations of design parameters based on self- and mutual-capacitance and inductance