Double doping: a method to decrease dislocation densities in LEC InP crystals

In this paper we shall report on the characteristics of LEC InP double doped with Cd and Te. Unlike (Cd,S)-doped material, (Cd, Te)-doped InP is p-type, with low-carrier concentration. In the following, the results of structural and electrical analysis carried out on several LEC InP crystals co-doped with Cd and Te are presented. The role of multiple doping as a strategy for dislocation reduction will also be discussed