Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance

Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corresponding to the insulator metal phase transition.Comment: Pages 13, figures 9, references 1

Optical anisotropy of InAs/GaSb broken-gap quantum wells

We investigate in detail the optical anisotropy of absorption of linearly polarized light in InAs/GaSb quantum wells grown on GaSb along the [001] direction, which can be used as an active region of different laser structures. The energy level positions, the wave functions, the optical matrix elements, and the absorption coefficients are calculated using the eight-band k center dot p model and the Burt-Foreman envelope function theory. In these calculations, the Schrodinger and Poisson equations are solved self-consistently taking the lattice-mismatched strain into account. We find that a realistic Hamiltonian, which has the C (2v) symmetry, results in considerable anisotropy of optical matrix elements for different directions of light polarization and different directions of the initial-state in-plane wave vector, including low-symmetry directions. We trace how the optical matrix elements and absorption are modified when spin-orbit interaction and important symmetry breaking mechanisms are taken into account (structural inversion asymmetry, bulk inversion asymmetry, and interface Hamiltonian). These mechanisms result in an almost 100% anisotropy of the absorption coefficients as the light polarization vector rotates in the plane of the structure and in a plane normal to the interfaces

Electrical excitation of shock and soliton-like waves in two-dimensional electron channels

We study electrical excitation of nonlinear plasma waves in heterostructures with two-dimensional electron channels and with split gates, and the propagation of these waves using hydrodynamic equations for electron transport coupled with two-dimensional Poisson equation for self-consistent electric potential. The term related to electron collisions with impurities and phonons as well as the term associated with viscosity are included into the hydrodynamic equations. We demonstrate the formation of shock and soliton-like waves as a result of the evolution of strongly nonuniform initial electron density distribution. It is shown that the shock wave front and the shape of soliton-like pulses pronouncedly depend on the coefficient of viscosity, the thickness of the gate layer and the nonuniformity of the donor distribution along the channel. The electron collisions result in damping of the shock and soliton-like waves, while they do not markedly affect the thickness of the shock wave front.Comment: 9 pages, 11 figure

Экспериментальные и численные исследования диаграмм обратного рассеяния блоков маскирующих цифровых двухбитных метапокрытий

Introduction. The scattering patterns of non-absorbing coded checkerboard-like meta-coatings (MCs) applied for reducing the radar cross section (RCS) of metal surfaces inevitably contain side diffraction lobes. Therefore, the development of MCs with a low level of diffraction lobes is relevant. For this purpose, it is proposed to use checkerboard-like MCs in the form of a set of several basic flat blocks with the same dimensions. The paper discusses two such basic MC blocks with different coding matrices. The cells of the metasurface contain two coupled elliptical ring resonators and are distinguished by a 2-bit coding of the tilt angle of the anisotropy axis. Coding matrices of the MC blocks are built according to the block principle.Aim. To investigate experimentally and numerically backscatter patterns (BSP) for consonant (co-) and orthogonal (cross-) polarizations of the two developed flat blocks of the 2-bit digital nonabsorbing anisotropic MCs for different planes and polarizations of irradiation.Materials and methods. Full-wave simulation of the MC blocks was carried out using the HFSS software by the finite element method. BSP measurements of the fabricated MC layouts were performed in an anechoic chamber of the Center for Collective Usage “Applied Electrodynamics and Antenna Measurements” of the Southern Federal University using an automated information and computing complex.Results. The RCS reduction for the two blocks under normal irradiation is approximately the same and not less than 12 dB over the 9.8…21 GHz band. A good matching between the simulation and measurement results of backscattering patterns of the blocks in the region of the central lobes for various planes and polarizations of the irradiation is noted. In the principal planes, the blocks cancel the central lobes of the BSP by 10…25 dB; in the sector of angles of around ±40°, the backward RCS of the blocks is lower than that of the reference. In the diagonal planes, there is a cancellation of the RCS by 13…15 dB and an expansion of the central lobe of the BSP for copolarizations, as well as a bifurcation of this lobe for crosspolarizations in the sector of angles ±9°; outside of this sector the RCSs of the blocks are commensurate with the RCS of the reference.Conclusion. The developed blocks of the 2-bit digital nonabsorbing anisotropic MCs can be used for broadband cancellation of the RCS of metal surfaces.Введение. Диаграммы рассеяния непоглощающих кодированных шахматно-подобных метапокрытий (МП) для снижения эффективной площади рассеяния (ЭПР) металлических поверхностей объектов неизбежно содержат боковые дифракционные лепестки. В связи с этим актуальна разработка МП с низким уровнем дифракционных лепестков. С этой целью предложено использовать шахматно-подобные МП в виде набора нескольких основных плоских блоков с одинаковыми размерами. В статье рассмотрены 2 таких основных блока МП с разными матрицами кодирования. Ячейки метаповерхности содержат связанные эллиптические кольцевые резонаторы и отличаются двухбитным кодированием угла наклона оси анизотропии. Матрицы кодирования блоков МП построены по блочному принципу.Цель работы. Экспериментально и численно исследовать диаграммы обратного рассеяния (ДОР) на согласованной (ко-) и ортогональной (кросс-) поляризациях двух разработанных плоских блоков двухбитных цифровых непоглощающих анизотропных МП для различных плоскостей и поляризаций облучения.Материалы и методы. Полноволновое моделирование блоков МП выполнено в программе HFSS методом конечных элементов. Измерения ДОР изготовленных макетов МП проведены на автоматизированном информационно-вычислительном комплексе АИВК-ТМСА-1.0-40.0-ДБ3/TD,FD в безэховой камере ЦКП "Прикладная электродинамика и антенные измерения" Южного федерального университета.Результаты. Снижение моностатических ЭПР двух блоков при нормальном облучении примерно одинаково и составляет не менее 12 дБ в полосе от 9.8 до 21 ГГц. Отмечено хорошее совпадение результатов полноволнового моделирования и измерения ДОР блоков разработанных метапокрытий в области центральных лепестков для различных плоскостей и поляризаций облучения. В главных плоскостях блоки гасят центральные лепестки ДОР на 10…25 дБ; в секторе углов около ±40° обратная ЭПР блоков ниже, чем у эталона. В диагональных плоскостях наблюдается гашение ЭПР на 13…15 дБ и расширение центрального лепестка ДОР на кополяризациях, а также раздвоение этого лепестка на кроссполяризациях в секторе углов ±9°. Вне этого сектора ЭПР блоков соизмерима с ЭПР эталона.Заключение. Разработанные блоки двухбитных цифровых непоглощающих анизотропных МП могут применяться для широкополосного гашения ЭПР металлических поверхностей

Spin-related phenomena in InAs/GaSb quantum wells

We have studied theoretically the influence of symmetry breaking mechanisms: structural inversion asymmetry, bulk inversion asymmetry, relativistic and non-relativistic interface Hamiltonian and warping on spin split of levels Delta E and optical absorption of linearly polarized light in asymmetrical quantum wells made from zincblende materials grown on [001] direction. The AlSb/InAs/GaSb/AlSb broken-gap quantum wells with hybridized electron-hole states sandwiched by the AlSb barriers have been considered. We have obtained substantial contributions of these effects into the absolute values of spin split of electron and hole states and spinflip optical transitions for the initial state in-plane wave vectors along low symmetry directions such as [12]

Effect of nonrelativistic interface Hamiltonian on optical transitions in broken-gap heterostructures

Using the Burt-Foreman envelope function theory and an eight-band k.p model, we have extended our previous work [Semenikhin et al. Phys. Rev. B 76, 035335 (2007)] on optical transitions in InAs/GaSb quantum wells grown along the [001] direction by completing the interface Hamiltonian with the inclusion of its nonrelativistic part. We found a substantial contribution of the nonrelativistic term to the originally forbidden spin-flip optical transitions. However, this nonrelativistic term produces only a minor modification of the lateral optical anisotropy

Optical absorption of polarized light in InAs/GaSb quantum wells

Using an eight-band k . p model Hamiltonian with the Burt-Foreman envelope function theory, we have investigated the optical absorption of both linearly and circularly polarized light, as well as related phenomena in InAs/GaSb broken-gap quantum wells grown along the [0 0 1] direction, with emphasis on the effects of electron-hole hybridization and the various symmetry-breaking mechanisms such as structural inversion asymmetry, bulk inversion asymmetry and interface Hamiltonian. The optical matrix elements exhibit unusual angular dependence in close connection with the spin-flip transitions which are originally forbidden. The spin split of the 2e subband results in two profound absorption peaks for the 1hh-2e transition for both linearly polarized and circularly polarized light. A large lateral optical anisotropy appears in the absorption coefficient of linearly polarized light, which can reach almost 100% with a reducing thickness of the quantum well. For the absorption of circularly polarized light, we found a large enhancement of electron spin polarization in the upper 2e subband, which was generally considered as forbidden if the polarization is along the direction perpendicular to the plane-of-light incidence

Carrier transport in broken-gap heterostructures tuned by a magnetic field

We have performed an eight-band k center dot p model calculation on the current-voltage (I-V) curves associated with interband magnetotransport in a double-barrier broken-gap heterostructure using the Burt-Foreman multiband envelope function theory and the scattering matrix approach. In a sample with very thin barriers, the broadening Gamma(0) of a virtual bound state with energy E-0 can be very large. Depending on the relative values of Gamma(0) and parallel to E-0-E-F parallel to, where E-F is the Fermi energy, the behavior of the I-V curve can be either of Ohmic type or of resonant-tunneling type, and can be tuned from one to the other by changing the applied magnetic-field strength