Performance comparison of small-pixel CdZnTe radiation detectors with gold contacts formed by sputter and electroless deposition

Recent improvements in the growth of wide-bandgap semiconductors, such as cadmium zinc telluride (CdZnTe or CZT), has enabled spectroscopic X/γ-ray imaging detectors to be developed. These detectors have applications covering homeland security, industrial analysis, space science and medical imaging. At the Rutherford Appleton Laboratory (RAL) a promising range of spectroscopic, position sensitive, small-pixel Cd(Zn)Te detectors have been developed. The challenge now is to improve the quality of metal contacts on CdZnTe in order to meet the demanding energy and spatial resolution requirements of these applications. The choice of metal deposition method and fabrication process are of fundamental importance. Presented is a comparison of two CdZnTe detectors with contacts formed by sputter and electroless deposition. The detectors were fabricated with a 74 × 74 array of 200 μm pixels on a 250 μm pitch and bump-bonded to the HEXITEC ASIC. The X/γ-ray emissions from an 241Am source were measured to form energy spectra for comparison. It was found that the detector with contacts formed by electroless deposition produced the best uniformity and energy resolution; the best pixel produced a FWHM of 560 eV at 59.54 keV and 50% of pixels produced a FWHM better than 1.7 keV . This compared with a FWHM of 1.5 keV for the best pixel and 50% of pixels better than 4.4 keV for the detector with sputtered contacts

High-energy Behavior of the Double Photoionization of Helium from 2 to 12 keV

We report the ratio of double-to-single photoionization of He at several photon energies from 2 to 12 keV. By time-of-Aight methods, we find a ratio consistent with an asymptote at 1.5%±0.2%, essentially reached by h v≈4 keV. Fair agreement is obtained with older shake calculations of Byron and Joachain [Phys. Rev. 164, 1 (1967)], of Aberg [Phys. Rev. A 2, 1726 (1970)], and with recent many-body perturbation theory (MBPT) of Ishihara, Hino, and McGuire [Phys. Rev. A 44, 6980 (1991)]. The result lies below earlier MPBT calculations by Amusia et al. [J. Phys. B 8, 1248 (1975)] (2.3%), and well above semiempirical predictions of Samson [Phys. Rev. Lett. 65, 2861 (1990)], who expects no asymptote and predicts ơ(He2+)/ơ (He+) =0.3% at 12 keV

Electron-Transfer from H-2 and Ar to Stored Multiply Charged Argon Ions Produced by Synchrotron Radiation

Journals published by the American Physical Society can be found at http://publish.aps.org/The rate coefficients for electron transfer from Ar and H-2 to Ar(q+) ions (3 less-than-or-equal-to q less-than-or-equal-to 6) have been measured using an ion-storage technique in a Penning ion trap. The ions were produced in the trap by K-shell photoionization of Ar atoms, using broadband synchrotron x-ray radiation. K-electron removal resulted in vacancy cascading, yielding a distribution of argon-ion charge states peaked near Ar4+. The stored ion gas had an initial temperature near 480 K. The basic data determining the rate coefficients k(Ar(q+)) are the storage time constants of each charge state in the trap, in the presence of a measured pressure of target gas. The results of the measurements (in units of 10(-9) cm3 s-1) are k(Ar3+, H-2) = 4.3(0.7), k(Ar3+, Ar) = 1.6(0.2), k(Ar4+, H-2) = 5.2(0.6), k(Ar4+, Ar) = 2.5(0.3), k(Ar5+, H-2) = 5.9(0.7), k(Ar5+, Ar) = 2.9(0.3), k(Ar6+, H-2) = 8.5(l.2), and k(Ar6+, Ar) = 2.5(0.3)

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).Comment: 21 pages, 4 figures. arXiv admin note: text overlap with arXiv:0904.369

Electric-octupole and pure-electric-quadrupole effects in soft-x-ray photoemission

Second-order [O(k^2), k=omega/c] nondipole effects in soft-x-ray photoemission are demonstrated via an experimental and theoretical study of angular distributions of neon valence photoelectrons in the 100--1200 eV photon-energy range. A newly derived theoretical expression for nondipolar angular distributions characterizes the second-order effects using four new parameters with primary contributions from pure-quadrupole and octupole-dipole interference terms. Independent-particle calculations of these parameters account for a significant portion of the existing discrepancy between experiment and theory for Ne 2p first-order nondipole parameters.Comment: 4 pages, 3 figure

An Integrated and Novel Approach to Estimating the Conveyance Capacity of the River Blackwater

Source: ICHE Conference Archive - https://mdi-de.baw.de/icheArchiv

Gain without population inversion in V-type systems driven by a frequency-modulated field

We obtain gain of the probe field at multiple frequencies in a closed three-level V-type system using frequency modulated pump field. There is no associated population inversion among the atomic states of the probe transition. We describe both the steady-state and transient dynamics of this system. Under suitable conditions, the system exhibits large gain simultaneously at series of frequencies far removed from resonance. Moreover, the system can be tailored to exhibit multiple frequency regimes where the probe experiences anomalous dispersion accompanied by negligible gain-absorption over a large bandwidth, a desirable feature for obtaining superluminal propagation of pulses with negligible distortion.Comment: 10 pages + 8 figures; To appear in Physical Review