3,854 research outputs found
MalStone: Towards A Benchmark for Analytics on Large Data Clouds
Developing data mining algorithms that are suitable for cloud computing
platforms is currently an active area of research, as is developing cloud
computing platforms appropriate for data mining. Currently, the most common
benchmark for cloud computing is the Terasort (and related) benchmarks.
Although the Terasort Benchmark is quite useful, it was not designed for data
mining per se. In this paper, we introduce a benchmark called MalStone that is
specifically designed to measure the performance of cloud computing middleware
that supports the type of data intensive computing common when building data
mining models. We also introduce MalGen, which is a utility for generating data
on clouds that can be used with MalStone
Piecewise smooth systems near a co-dimension 2 discontinuity manifold: can one say what should happen?
We consider a piecewise smooth system in the neighborhood of a co-dimension 2
discontinuity manifold . Within the class of Filippov solutions, if
is attractive, one should expect solution trajectories to slide on
. It is well known, however, that the classical Filippov
convexification methodology is ambiguous on . The situation is further
complicated by the possibility that, regardless of how sliding on is
taking place, during sliding motion a trajectory encounters so-called generic
first order exit points, where ceases to be attractive.
In this work, we attempt to understand what behavior one should expect of a
solution trajectory near when is attractive, what to expect
when ceases to be attractive (at least, at generic exit points), and
finally we also contrast and compare the behavior of some regularizations
proposed in the literature.
Through analysis and experiments we will confirm some known facts, and
provide some important insight: (i) when is attractive, a solution
trajectory indeed does remain near , viz. sliding on is an
appropriate idealization (of course, in general, one cannot predict which
sliding vector field should be selected); (ii) when loses attractivity
(at first order exit conditions), a typical solution trajectory leaves a
neighborhood of ; (iii) there is no obvious way to regularize the
system so that the regularized trajectory will remain near as long as
is attractive, and so that it will be leaving (a neighborhood of)
when looses attractivity.
We reach the above conclusions by considering exclusively the given piecewise
smooth system, without superimposing any assumption on what kind of dynamics
near (or sliding motion on ) should have been taking place.Comment: 19 figure
k-core organization of complex networks
We analytically describe the architecture of randomly damaged uncorrelated
networks as a set of successively enclosed substructures -- k-cores. The k-core
is the largest subgraph where vertices have at least k interconnections. We
find the structure of k-cores, their sizes, and their birth points -- the
bootstrap percolation thresholds. We show that in networks with a finite mean
number z_2 of the second-nearest neighbors, the emergence of a k-core is a
hybrid phase transition. In contrast, if z_2 diverges, the networks contain an
infinite sequence of k-cores which are ultra-robust against random damage.Comment: 5 pages, 3 figure
Π€ΠΠ ΠΠΠ ΠΠΠΠΠΠ Π’Π ΠΠ₯ΠΠΠ ΠΠ«Π₯ Π‘Π’Π Π£ΠΠ’Π£Π Π ΠΠΠΠΠΠΠΠΠ₯ ΠΠΠ ΠΠΠΠ ΠΠ ΠΠΠΠΠ― ΠΠΠΠΠΠΠ₯ΠΠΠΠ§ΠΠ‘ΠΠΠ Π’Π ΠΠΠΠΠΠΠΠ
This article is a review of the technology for the formation of threeβdimensional structures in silicon carbide substrates. The technological solution of these problems ionβstimulation plasmochemistry etching in its various modifications, the most successful being by ICP sources (sources of inductively coupled plasma).Silicon carbide consists of silicon and carbon which produce volatile fluorides in reaction with fluorine. Therefore for plasmochemistry etching of silicon carbide one uses fluorineβcontaining gases, most often sulfur hexafluoride (SF6), and sometimes with additions of oxygen and argon. During plasmochemistry etching of silicon carbide oneΒ uses theΒ maskΒ theΒ materialΒ of which does not interact with fluorine.Β As a rule these are thin films of metals, e.g.Β Cu, Al and Ni, and sometimes films of silicon oxides.The mostΒ important technological trend of this process is making through holesΒ by etching of SiC substrates with GaN epitaxial layers, and their subsequent metallization.In this review we will present examples of ICP source applications for the formation of microβ and nanoβsized threeβdimensional structures in silicon carbide substrates, includingΒ makingΒ through holesΒ in SiC substrates with GaN epitaxial layers.ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ ΠΎΠ±Π·ΠΎΡ, ΠΏΠΎΡΠ²ΡΡΠ΅Π½Π½ΡΠΉ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΡΠ΅Ρ
ΠΌΠ΅ΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡ Π² ΠΏΠΎΠ΄Π»ΠΎΠΆΠΊΠ°Ρ
Β ΠΊΠ°ΡΠ±ΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ. Π’Π΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈ ΡΡΠ° Π·Π°Π΄Π°ΡΠ° ΡΠ΅ΡΠ°Π΅ΡΡΡ ΠΈΠΎΠ½Π½ΠΎβΡΡΠΈΠΌΡΠ»ΠΈΡΠΎΠ²Π°Π½Π½ΡΠΌ ΠΏΠ»Π°Π·ΠΌΠΎ-Ρ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΈΠΌ ΡΡΠ°Π²Π»Π΅Π½ΠΈΠ΅ΠΌ Π² ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
Π΅Π³ΠΎ Π²Π°ΡΠΈΠ°ΡΠΈΡΡ
, ΠΈ Π½Π°ΠΈΠ±ΠΎΠ»Π΅Π΅ ΡΡΠΏΠ΅ΡΠ½ΠΎ β Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠ° Ρ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ²Π½ΠΎ ΡΠ²ΡΠ·Π°Π½Π½ΠΎΠΉ ΠΏΠ»Π°Π·ΠΌΠΎΠΉ (ICP).ΠΠ°ΡΠ±ΠΈΠ΄Β ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΡΠΎΡΡΠΎΠΈΡ ΠΈΠ· ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΠΈ ΡΠ³Π»Π΅ΡΠΎΠ΄Π°, ΠΊΠΎΡΠΎΡΡΠ΅ Π² ΡΠ΅Π°ΠΊΡΠΈΠΈ ΡΠΎ ΡΡΠΎΡΠΎΠΌ ΠΎΠ±ΡΠ°Π·ΡΡΡ Π»Π΅ΡΡΡΠΈΠ΅ ΡΡΠΎΡΠΈΠ΄Ρ. Π Π΅Π°ΠΊΡΠΈΡ ΡΡΠ°Π²Π»Π΅Π½ΠΈΡ ΠΈΠ΄Π΅Ρ ΠΏΡΠΈ Π²Π·Π°ΠΈΠΌΠΎΠ΄Π΅ΠΉΡΡΠ²ΠΈΠΈ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΠΈ ΡΠ³Π»Π΅ΡΠΎΠ΄Π° Ρ Π°ΠΊΡΠΈΠ²Π½ΡΠΌΠΈ ΡΠ°Π΄ΠΈΠΊΠ°Π»Π°ΠΌΠΈ ΠΈ ΠΈΠΎΠ½Π°ΠΌΠΈ ΡΡΠΎΡΠ°. ΠΠΎΡΡΠΎΠΌΡ Π΄Π»Ρ ΠΏΠ»Π°Π·ΠΌΠΎΡ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΡΠ°Π²Π»Π΅Π½ΠΈΡ ΠΊΠ°ΡΠ±ΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡ ΡΡΠΎΡΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠΈΠΉ Π³Π°Π·, Π² Π±ΠΎΠ»ΡΡΠΈΠ½ΡΡΠ²Π΅ ΡΠ»ΡΡΠ°Π΅Π² β ΡΠ΅ΡΡΠΈΡΡΠΎΡΠΈΡΡΡΡ ΡΠ΅ΡΡ SF6 (ΡΠ°ΡΡΠΎ Ρ Π΄ΠΎΠ±Π°Π²ΠΊΠΎΠΉ ΠΊΠΈΡΠ»ΠΎΡΠΎΠ΄Π° ΠΈ ΠΈΠ½ΠΎΠ³Π΄Π°Β Π°ΡΠ³ΠΎΠ½Π°). Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΌΠ°ΡΠΎΠΊ ΠΏΡΠΈ ΠΏΠ»Π°Π·ΠΌΠΎΡ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΎΠΌ ΡΡΠ°Π²Π»Π΅Π½ΠΈΠΈ ΠΊΠ°ΡΠ±ΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΠΏΡΠΈΠΌΠ΅Π½ΡΡΡΒ ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»Ρ, Π½Π΅ Π²Π·Π°ΠΈΠΌΠΎΠ΄Π΅ΠΉΡΡΠ²ΡΡΡΠΈΠ΅ Ρ ΡΡΠΎΡΠΎΠΌ. ΠΡΠ΅ΠΈΠΌΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎ ΡΡΠΎ ΠΏΠ»Π΅Π½ΠΊΠΈ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ² Cu, Al ΠΈ Ni, ΡΠ΅ΠΆΠ΅ β ΠΏΠ»Π΅Π½ΠΊΠΈ ΠΎΠΊΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ.ΠΡΠΎΠ±ΠΎΒ Π²Π°ΠΆΠ½ΠΎΠ΅ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠ΅ Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΠ΅, ΡΠ²ΡΠ·Π°Π½Π½ΠΎΠ΅ Ρ ΠΏΠ»Π°Π·ΠΌΠΎΡ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΈΠΌ ΡΡΠ°Π²Π»Π΅Π½ΠΈΠ΅ΠΌ ΠΏΠΎΠ΄Π»ΠΎΠΆΠ΅ΠΊ SiC Ρ Π½Π°Π½Π΅ΡΠ΅Π½Π½ΡΠΌΠΈ Π½Π° Π½ΠΈΡ
ΡΠΏΠΈΡΠ°ΠΊΡΠΈΠ°Π»ΡΠ½ΡΠΌΠΈ ΡΠ»ΠΎΡΠΌΠΈ GaN, β ΡΡΠΎ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΠ΅ Π² Π½ΠΈΡ
ΡΠΊΠ²ΠΎΠ·Π½ΡΡ
Β ΠΎΡΠ²Π΅ΡΡΡΠΈΠΉ ΠΈ ΠΈΡ
ΠΏΠΎΡΠ»Π΅Π΄ΡΡΡΠ°Ρ ΠΌΠ΅ΡΠ°Π»Π»ΠΈΠ·Π°ΡΠΈΡ.ΠΡΠΈΠ²Π΅Π΄Π΅Π½Ρ ΠΏΡΠΈΠΌΠ΅ΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠΎΠ² ICP Π΄Π»Ρ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΡΠ΅Ρ
ΠΌΠ΅ΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡ Ρ ΠΌΠΈΠΊΡΠΎβ ΠΈ Π½Π°Π½ΠΎΡΠ°Π·ΠΌΠ΅ΡΠ°ΠΌΠΈ Π² ΠΊΠ°ΡΠ±ΠΈΠ΄Π΅ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ.Π ΡΠΎΠΌ ΡΠΈΡΠ»Π΅ ΡΠ°ΡΡΠΌΠΎΡΡΠ΅Π½ΠΎ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠΊΠ²ΠΎΠ·Π½ΡΡ
Β ΠΎΡΠ²Π΅ΡΡΡΠΈΠΉ Π² ΠΏΠΎΠ΄Π»ΠΎΠΆΠΊΠ°Ρ
ΠΊΠ°ΡΠ±ΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ Ρ ΡΠΏΠΈΡΠ°ΠΊΡΠΈΠ°Π»ΡΠ½ΡΠΌΠΈ ΡΠ»ΠΎΡΠΌΠΈ Π½ΠΈΡΡΠΈΠ΄Π° Π³Π°Π»Π»ΠΈΡ
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Turning points: the personal and professional circumstances that lead academics to become middle managers
In the current higher education climate, there is a growing perception that the pressures associated with being an academic middle manager outweigh the perceived rewards of the position. This article investigates the personal and professional circumstances that lead academics to become middle managers by drawing on data from life history interviews undertaken with 17 male and female department heads from a range of disciplines, in a post-1992 UK university. The data suggests that experiencing conflict between personal and professional identities, manifested through different socialization experiences over time, can lead to a βturning pointβ and a decision that affects a personβs career trajectory. Although the results of this study cannot be generalized, the findings may help other individuals and institutions move towards a firmer understanding of the academic who becomes head of departmentβin relation to theory, practice and research
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