Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanotube-Based Active Layers

Solution-processed single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) in the research stage often have large active areas. This results in unusual gate leakage currents with high magnitudes that vary with applied voltages. In this paper, we report an improved structure for solution-processed SWCNT-based TFTs. The unusual gate leakage current in the improved structure is resolved by patterning the SWCNT active layer to confine it to the channel region. For comparative purposes, this improved structure is compared to a traditional structure whose unpatterned SWCNT active layer expands well beyond the channel region. As TFT performance also varies with oxide layer thickness, 90 nm and 300 nm thick oxides were considered. The improved TFTs have gate leakage currents far lower than the traditional TFT with the same dimensions (aside from the unpatterned active area). Moreover, the unusual variation in gate leakage current with applied voltages is resolved. Patterning the SWCNT layer, increasing the oxide thickness, and reducing the top electrode length all help prevent a rapid dielectric breakdown. To take advantage of solution-based fabrication processes, the active layer and electrodes of our TFTs were fabricated with solution-based depositions. The performance of the TFT can be further improved in the future by increasing SWCNT solution incubation time and reducing channel size

Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanotube-Based Active Layers

Solution-processed single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) in the research stage often have large active areas. This results in unusual gate leakage currents with high magnitudes that vary with applied voltages. In this paper, we report an improved structure for solution-processed SWCNT-based TFTs. The unusual gate leakage current in the improved structure is resolved by patterning the SWCNT active layer to confine it to the channel region. For comparative purposes, this improved structure is compared to a traditional structure whose unpatterned SWCNT active layer expands well beyond the channel region. As TFT performance also varies with oxide layer thickness, 90 nm and 300 nm thick oxides were considered. The improved TFTs have gate leakage currents far lower than the traditional TFT with the same dimensions (aside from the unpatterned active area). Moreover, the unusual variation in gate leakage current with applied voltages is resolved. Patterning the SWCNT layer, increasing the oxide thickness, and reducing the top electrode length all help prevent a rapid dielectric breakdown. To take advantage of solution-based fabrication processes, the active layer and electrodes of our TFTs were fabricated with solution-based depositions. The performance of the TFT can be further improved in the future by increasing SWCNT solution incubation time and reducing channel size