Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping

We present microscopically-resolved photocurrent spectroscopy as a new powerful analytical tool for the simultaneous detection of packaging-induced strain and defects in GaAs-based high-power laser diode arrays (cm-bars). Using the Fourier-transform (FT) technique we measure photocurrent (PC) spectra with a high spatial resolution of better than 50 μm at the active layer of the device. By analyzing this data, spatially resolved distributions of strain as well as of defects are obtained. So far, PC measurements at cm-bars have only provided an overview of the distribution of strain and defects in the device on an emitter-by-emitter scale. The high spatial resolution now allows examination of the distribution of strain and defects even within one single emitter. This is essential for obtaining insights into device failure mechanisms and also makes a substantial contribution for improving device performance and reliability

Grundlagenuntersuchungen zur Leistungs- und Lebensdauerbegrenzung, Alterung und Verspannung von Hochleistungslaserdioden : Schlussbericht

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Grundlagenuntersuchungen zur Leistungs- und Lebensdauerbegrenzung, Alterung und Verspannung von Hochleistungslaserdioden Schlussbericht

SIGLEAvailable from TIB Hannover: F02B1160 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman