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7 research outputs found

25 GHz MMIC oscillator fabricated using commercial SiGe-HBT process

Author: A. Schüppen
Case
H. Kuhnert
Knapp
Plouchart
Rheinfelder
Rheinfelder
Schüppen
Schüppen
W. Heinrich
W. Schwerzel
Wurzer
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/2000
Field of study

Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators

Author: A. Gruhle
C. Mähner
Crabbé
Gabl
Kirtania
Markus
Schüppen
Schüppen
v. Haaren
Vempati
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/1997
Field of study

Application of SiGe heterojunction bipolar transistors in 5.8 and 10 GHz low-noise amplifiers

Author: A. Schüppen
Erben
Friis
H. Schumacher
J. Arndt
Schumacher
Schumacher
Schüppen
Soyuer
U. Erben
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/1998
Field of study

SiGe heterojunction bipolar transistor with 213 GHz fT at 77 K

Author: A. Gruhle
Aniel
Crozat
F. Aniel
Gruhle
Jayanarayanan
N. Zerounian
R. Adde
Schüppen
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/2000
Field of study

PMD mitigation at 10 Gbit/s using linear and nonlinear integrated electronic equaliser circuits

Author: Bülow
Chbat
F. Buchali
H. Bülow
Kasturia
R. Ballentin
Schüppen
T. Wehren
W. Baumert
Winters
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/2000
Field of study

High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor

Author: Crabbé
G.E. Ponchak
L.P.B. Katehi
Ma
P. Bhattacharya
Rieh
Rieh
S. Mohammadi
S.A. Alterovitz
Schüppen
Strong
Z. Ma
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/2001
Field of study

Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors

Author: G.E. Ponchak
J.-F. Luy
K.M. Strohm
L.P.B. Katehi
Ma
Ma
P. Bhattacharya
Rieh
S. Mohammadi
S.A. Alterovitz
Schüppen
Strohm
Z. Ma
Publication venue: 'Institution of Engineering and Technology (IET)'
Publication date: 01/01/2001
Field of study

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