Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage

We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes

Noise in Al single electron transistors of stacked design

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of all transistors turned out to be surprisingly low, (2.5 - 7)*10E-5 e/sqrt(Hz) at f = 10 Hz. Although the lowest detected noise originates mostly from fluctuations of background charge, the noise contribution of the tunnel junction conductances was, on occasion, found to be dominant.Comment: 4 pages of text with 1 table and 5 figure

1.57 μm InGaAsP/InP surface emitting lasers by angled focus ion beam etching

The characteristics of 1.57 μm InGaAsP/InP surface emitting lasers based on an in-plan ridged structure and 45° beam deflectors defined by angled focused ion beam (FIB) etching are reported. With an externally integrated beam deflector, threshold currents and emission spectra identical to conventional edge emitting lasers are achieved. These results show that FIB etching is a very promising technique for the definition of high quality mirrors and beam deflectors on semiconductor heterostructures for a variety of integrated optoelectronic devices

Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes

Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes

Virtual Compton scattering off the nucleon at low energies

We investigate the low-energy behavior of the four-point Green's function $\Gamma^{\mu\nu}$ describing virtual Compton scattering off the nucleon. Using Lorentz invariance, gauge invariance, and crossing symmetry, we derive the leading terms of an expansion of the operator in the four-momenta $q$ and $q'$ of the initial and final photon, respectively. The model-independent result is expressed in terms of the electromagnetic form factors of the free nucleon, i.e., on-shell information which one obtains from electron-nucleon scattering experiments. Model-dependent terms appear in the operator at $O(q_\alpha q'_\beta)$, whereas the orders $O(q_\alpha q_\beta)$ and $O(q'_\alpha q'_\beta)$ are contained in the low-energy theorem for $\Gamma^{\mu\nu}$, i.e., no new parameters appear. We discuss the leading terms of the matrix element and comment on the use of on-shell equivalent electromagnetic vertices in the calculation of ``Born terms'' for virtual Compton scattering.Comment: 26 pages, RevTex, to appear in Phys. Rev.

Generalized polarizabilities and the spin-averaged amplitude in virtual Compton scattering off the nucleon

We discuss the low-energy behavior of the spin-averaged amplitude of virtual Compton scattering (VCS) off a nucleon. Based on gauge invariance, Lorentz invariance and the discrete symmetries, it is shown that to first order in the frequency of the final real photon only two generalized polarizabilities appear. Different low-energy expansion schemes are discussed and put into perspective.Comment: 13 pages, 1 postscript figure, Revtex using eps

Design of photonic crystal microcavities for cavity QED

We discuss the optimization of optical microcavity designs based on 2D photonic crystals for the purpose of strong coupling between the cavity field and a single neutral atom trapped within a hole. We present numerical predictions for the quality factors and mode volumes of localized defect modes as a function of geometric parameters, and discuss some experimental challenges related to the coupling of a defect cavity to gas-phase atoms.Comment: 12 pages, 16 figure

Size tunable visible and near-infrared photoluminescence from vertically etched silicon quantum dots

Corrugated etching techniques were used to fabricate size-tunable silicon quantum dots that luminesce under photoexcitation, tunable over the visible and near infrared. By using the fidelity of lithographic patterning and strain limited, self-terminating oxidation, uniform arrays of pillar containing stacked quantum dots as small as 2 nm were patterned. Furthermore, an array of pillars, with multiple similar sized quantum dots on each pillar, was fabricated and tested. The photoluminescence displayed a multiple, closely peaked emission spectra corresponding to quantum dots with a narrow size distribution. Similar structures can provide quantum confinement effects for future nanophotonic and nanoelectronic devices

Nucleon-nucleon bremsstrahlung: An example of the impossibility of measuring off-shell amplitudes

For nearly fifty years theoretical and experimental efforts in nucleon-nucleon bremsstrahlung (NN$\gamma$) have been devoted to measuring off-shell amplitudes and distinguishing among various NN potentials on the basis of their off-shell behavior. New experiments are underway, designed specifically to attain kinematics further off shell than in the past, and thus to be more sensitive to the off-shell behavior. This letter shows that, contrary to these expectations, and due to the invariance of the S-matrix under transformations of the fields, the off-shell NN amplitude is as a matter of principle an unmeasurable quantity in NN$\gamma$.Comment: 9 pages, Latex, using RevTeX; Minor wording changes, title changed, version to be published in Phys. Rev. Letter

Generalized polarizabilities and the chiral structure of the nucleon

We discuss the virtual Compton scattering reaction $e^-p\to e^-p\gamma$ at low energies. We present results for the generalized polarizabilities of the nucleon obtained in heavy baryon chiral perturbation theory at $O(p^3)$.Comment: 5 pages, LaTex file, 1 postscript figure, uses ``espcrc1.sty'', talk given by S. Scherer at the 15th International Conference on Few Body Problems in Physics, Groningen, The Netherlands, 22-26 July 1997, to appear in the proceedings (Nucl. Phys. A